公开(公告)号：US20230386823A1

公开(公告)日：2023-11-30

申请号：US17829288

申请日：2022-05-31

Applicant: Applied Materials, Inc.

Inventor： Kaushik ALAYAVALLI ,  Andrew NGUYEN ,  Edward HAYWOOD ,  Lu LIU ,  Malav KAPADIA

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02087 ,  H01J37/3244 ,  H01J2237/335

Abstract: Embodiments disclosed herein include a method for cleaning a bevel area of a substrate support disposed within a plasma processing chamber. In one example the method begins by placing a cover substrate on a substrate support disposed in an interior volume of a processing chamber. A cleaning gas is provided into the interior volume of the processing chamber. A plasma is struck in the interior volume of the processing chamber. A cleaning gas is provided through the substrate support to a bevel edge area defined between an outer diameter of the cover substrate and an edge ring disposed on the substrate support.

公开(公告)号：US20230343586A1

公开(公告)日：2023-10-26

申请号：US18342296

申请日：2023-06-27

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar SINGH ,  Rick KUSTRA ,  Vinayak Vishwanath HASSAN ,  Bhaskar KUMAR ,  Krishna NITTALA ,  Pramit MANNA ,  Kaushik ALAYAVALLI ,  Ganesh BALASUBRAMANIAN

IPC: H01L21/02 ,  H01J37/32 ,  B08B7/00 ,  H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/44

CPC classification number: H01L21/02274 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32862 ,  B08B7/0035 ,  H01L21/0332 ,  C23C16/505 ,  C23C16/26 ,  C23C16/4405 ,  H01L21/02115

Abstract: Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

公开(公告)号：US20210384015A1

公开(公告)日：2021-12-09

申请号：US16896575

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Huiyuan WANG ,  Rick KUSTRA ,  Kaushik ALAYAVALLI ,  Eswaranand VENKATASUBRAMANIAN ,  Jay D. PINSON, II ,  Abhijit B. MALLICK

IPC: H01J37/32 ,  B08B5/00 ,  B08B9/08

Abstract: Embodiments of the present disclosure generally relate to clean methods for processing chambers, and more specifically relate to plasma clean methods for removing carbon films from surfaces within the processing chamber. A method for cleaning includes introducing a cleaning gas into a processing region within a processing chamber, where interior surfaces of the processing chamber have a coating containing amorphous carbon. The cleaning gas contains oxygen gas and a noble gas. The method also includes generating an ion coupled plasma (ICP) from the cleaning gas within an upper portion of the processing region and generating a bias across a substrate support in a lower portion of the processing region. The method further includes exposing the amorphous carbon to atomic oxygen ions produced from the oxygen gas and the ICP and removing the amorphous carbon from the interior surfaces with the atomic oxygen ions during a cleaning process.

公开(公告)号：US20190226087A1

公开(公告)日：2019-07-25

申请号：US16254806

申请日：2019-01-23

Applicant: Applied Materials, Inc.

Inventor： Yuxing ZHANG ,  Kaushik ALAYAVALLI ,  Kalyanjit GHOSH ,  Sanjeev BALUJA ,  Daniel HWUNG

IPC: C23C16/455

Abstract: Embodiments herein relate to apparatus for gas distribution in a processing chamber. More specifically, aspects of the disclosure relate to a ceramic faceplate. The faceplate generally has a ceramic body. A recess is formed in an upper surface of the faceplate body. A plurality of apertures is formed in the recess through the faceplate. A heater is optionally disposed in the recess to heat the faceplate.

公开(公告)号：US20190122872A1

公开(公告)日：2019-04-25

申请号：US16230766

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Sanjeev BALUJA ,  Mayur G. KULKARNI ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ALVIN ZHOU ,  Amit Kumar BANSAL ,  Priyanka DASH ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Qiang MA ,  Kaushik ALAYAVALLI ,  Yuxing ZHANG ,  Daniel HWUNG ,  Shawyon JAFARI

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455

Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

公开(公告)号：US20180082866A1

公开(公告)日：2018-03-22

申请号：US15703666

申请日：2017-09-13

Applicant: Applied Materials, Inc.

Inventor： Kaushik ALAYAVALLI ,  Ajit BALAKRISHNA ,  Sanjeev BALUJA ,  Amit Kumar BANSAL ,  Matthew James BUSCHE ,  Juan Carlos ROCHA-ALVAREZ ,  Swaminathan T. SRINIVASAN ,  Tejas ULAVI ,  Jianhua ZHOU

IPC: H01L21/67

CPC classification number: H01L21/67103 ,  H01L21/67109 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/68792

Abstract: Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.

公开(公告)号：US20160322200A1

公开(公告)日：2016-11-03

申请号：US15142022

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： Kaushik ALAYAVALLI ,  Xinhai HAN ,  Praket P. JHA ,  Masaki OGATA ,  Zhijun JIANG ,  Allen KO ,  Ndanka O. MUKUTI ,  Thuy BRITCHER ,  Amit Kumar BANSAL ,  Ganesh BALASUBRAMANIAN ,  Juan Carlos ROCHA-ALVAREZ ,  Bok Hoen KIM

IPC: H01J37/32 ,  C23C16/509 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/509 ,  H01J37/32091

Abstract: A method and apparatus for a dual-channel showerhead is provided. In one embodiment the showerhead comprises a body comprising a conductive material having a plurality of first openings formed therethrough comprising a first gas channel and a plurality of second openings formed therethrough comprising a second gas channel that is fluidly separated from the first gas channel, wherein each of the first openings having a geometry that is different than each of the second openings.

Abstract translation: 提供了一种双通道花洒的方法和装置。 在一个实施例中，喷头包括主体，该主体包括导电材料，该导电材料具有多个形成的第一开口，其包括第一气体通道和穿过其中形成的多个第二开口，其包括与第一气体通道流体分离的第二气体通道， 的第一开口具有与每个第二开口不同的几何形状。