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公开(公告)号：US11673169B2
公开(公告)日：2023-06-13
申请号：US17294013
申请日：2019-11-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Andrey Nikipelov , Dmitry Kurilovich , Fabio Sbrizzai , Marcus Adrianus Van de Kerkhof , Ties Wouter Van der Woord , Willem Joan Van der Zande , Jeroen Van Duivenbode , David Ferdinand Vles
Abstract: A membrane cleaning apparatus for removing particles from a membrane, the apparatus including a membrane support and an electric field generating mechanism. The membrane support is for supporting the membrane. The electric field generating mechanism is for generating an electric field in the vicinity of the membrane when supported by the membrane support. The electric field generating mechanism may include: one or more collector electrodes; and a mechanism for applying a voltage across a membrane supported by the membrane support and the or each of the one or more collector electrodes.
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公开(公告)号：US11320731B2
公开(公告)日：2022-05-03
申请号：US16060635
申请日：2016-12-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Dennis De Graaf , Paul Janssen , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , David Ferdinand Vles , Willem-Pieter Voorthuijzen
Abstract: A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.
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公开(公告)号：US11231646B2
公开(公告)日：2022-01-25
申请号：US16614815
申请日：2018-06-08
Applicant: ASML NETHERLANDS B.V.
Inventor： David Ferdinand Vles , Chaitanya Krishna Ande , Antonius Franciscus Johannes De Groot , Adrianus Johannes Maria Giesbers , Johannes Joseph Janssen , Paul Janssen , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Marcel Peter Meijer , Wouter Rogier Meijerink , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Raymond Olsman , Hrishikesh Patel , Mária Péter , Gerrit Van Den Bosch , Wilhelmus Theodorus Anthonius Johannes Van Den Einden , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
IPC: G03F1/64
Abstract: A pellicle assembly is disclosed that has a pellicle frame defining a surface onto which a pellicle is to be attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. There is also disclosed a pellicle assembly for a patterning device, the pellicle assembly including one or more actuators for moving the pellicle assembly towards and way from the patterning device.
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公开(公告)号：US10712656B2
公开(公告)日：2020-07-14
申请号：US15752302
申请日：2016-08-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Zomer Silvester Houweling , Eric Willem Felix Casimiri , Tamara Druzhinina , Paul Janssen , Michael Alfred Josephus Kuijken , Martinus Hendrikus Antonius Leenders , Sicco Oosterhoff , Mária Péter , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Beatrijs Louise Marie-Joseph Katrien Verbrugge , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising a planar substrate and at least one membrane layer, wherein the planar substrate comprises an inner region and a border region around the inner region; positioning the stack on a support such that the inner region of the planar substrate is exposed; and selectively removing the inner region of the planar substrate using a non-liquid etchant, such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate.
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公开(公告)号：US11971654B2
公开(公告)日：2024-04-30
申请号：US18208188
申请日：2023-06-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
CPC classification number: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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Patent Agency Ranking
公开(公告)号：US11287737B2
公开(公告)日：2022-03-29
申请号：US16761683
申请日：2018-11-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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公开(公告)号：US11042096B2
公开(公告)日：2021-06-22
申请号：US16619803
申请日：2018-05-15
Applicant: ASML Netherlands B.V.
Inventor： Stefan Michiel Witte , Alessandro Antoncecchi , Hao Zhang , Stephen Edward , Paulus Clemens Maria Planken , Sebastianus Adrianus Goorden , Simon Reinald Huisman , Irwan Dani Setija , David Ferdinand Vles
Abstract: A method for determining a characteristic of a feature in an object, the feature being disposed below a surface of the object is disclosed. The surface of the object is irradiated with a pulsed pump radiation beam so as to produce an acoustic wave in the object. The surface of the object is then irradiated with a measurement radiation beam. A portion of the measurement radiation beam scattered from the surface is received and a characteristic of the feature in the object is determined from at least a portion of the measurement radiation beam scattered from the surface within a measurement time period. A temporal intensity distribution of the pulsed pump radiation beam is selected such that in the measurement time period a signal to background ratio is greater than a signal to background ratio achieved using a single pulse of the pulsed pump radiation beam. The signal to background ratio is a ratio of: (a) signals generated at the surface by reflections of acoustic waves from the feature to (b) background signals generated at the surface by reflections of acoustic waves which have not reflected from the feature.
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公开(公告)号：US20210109438A1
公开(公告)日：2021-04-15
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US10976196B2
公开(公告)日：2021-04-13
申请号：US16488259
申请日：2018-02-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Joost André Klugkist , Vadim Yevgenyevich Banine , Johan Franciscus Maria Beckers , Madhusudhanan Jambunathan , Maxim Aleksandrovich Nasalevich , Andrey Nikipelov , Roland Johannes Wilhelmus Stas , David Ferdinand Vles , Wilhelmus Jacobus Johannes Welters , Sandro Wricke
Abstract: A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.
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公开(公告)号：US10747127B2
公开(公告)日：2020-08-18
申请号：US16326948
申请日：2017-08-11
Applicant: ASML Netherlands B.V.
Inventor： Frits Van Der Meulen , Erik Johan Arlemark , Hendrikus Herman Marie Cox , Martinus Agnes Willem Cuijpers , Joost De Hoogh , Gosse Charles De Vries , Paul Comé Henri De Wit , Sander Catharina Reinier Derks , Ronald Cornelis Gerardus Gijzen , Dries Vaast Paul Hemschoote , Christiaan Alexander Hoogendam , Adrianus Hendrik Koevoets , Raymond Wilhelmus Louis Lafarre , Alain Louis Claude Leroux , Patrick Willem Paul Limpens , Jim Vincent Overkamp , Christiaan Louis Valentin , Koos Van Berkel , Stan Henricus Van Der Meulen , Jacobus Cornelis Gerardus Van Der Sanden , Harmen Klaas Van Der Schoot , David Ferdinand Vles , Evert Auke Rinze Westerhuis
IPC: G03F7/20
Abstract: A lithographic apparatus comprising a projection system configured to project a patterned radiation beam to form an exposure area on a substrate held on a substrate table, the lithographic apparatus further comprising a cooling apparatus for cooling the substrate, wherein the cooling apparatus comprises a cooling element located above the substrate table and adjacent to the exposure area, the cooling element being configured to remove heat from the substrate.
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