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公开(公告)号：US20230213851A1
公开(公告)日：2023-07-06
申请号：US18120886
申请日：2023-03-13
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F7/70983 , G03F7/70958 , G03F1/62 , G03F7/70808
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.
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公开(公告)号：US11061320B2
公开(公告)日：2021-07-13
申请号：US16897535
申请日：2020-06-10
Applicant: ASML NETHERLANDS B.V.
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.
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公开(公告)号：US12117726B2
公开(公告)日：2024-10-15
申请号：US18220799
申请日：2023-07-11
Applicant: ASML NETHERLANDS B.V.
Inventor： David Ferdinand Vles , Chaitanya Krishna Ande , Antonius Franciscus Johannes De Groot , Adrianus Johannes Maria Giesbers , Johannes Joseph Janssen , Paul Janssen , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Marcel Peter Meijer , Wouter Rogier Meijerink , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Raymond Olsman , Hrishikesh Patel , Mária Péter , Gerrit van den Bosch , Wilhelmus Theodorus Anthonius Johannes van den Einden , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
IPC: G03F1/64
CPC classification number: G03F1/64
Abstract: A pellicle assembly includes a pellicle frame defining a surface onto which a pellicle is, or to be, attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. A pellicle assembly for a patterning device, the pellicle assembly includes one or more actuators for moving the pellicle assembly towards and way from the patterning device.
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公开(公告)号：US12072620B2
公开(公告)日：2024-08-27
申请号：US17278356
申请日：2019-10-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Sander Baltussen , Dennis De Graaf , Johannes Christiaan Leonardus Franken , Adrianus Johannes Maria Giesbers , Alexander Ludwig Klein , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Alexey Sergeevich Kuznetsov , Arnoud Willem Notenboom , Mahdiar Valefi , Marcus Adrianus Van de Kerkhof , Wilhelmus Theodorus Anthonius Johannes Van den Einden , Ties Wouter Van der Woord , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
CPC classification number: G03F1/64 , G03F7/7015
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.
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公开(公告)号：US11971656B2
公开(公告)日：2024-04-30
申请号：US18120886
申请日：2023-03-13
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F1/64 , G03F1/62 , G03F7/70808 , G03F7/70958 , G03F7/70983 , G03F1/66
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.
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Patent Agency Ranking
公开(公告)号：US11754918B2
公开(公告)日：2023-09-12
申请号：US17548944
申请日：2021-12-13
Applicant: ASML NETHERLANDS B.V.
Inventor： David Ferdinand Vles , Chaitanya Krishna Ande , Antonius Franciscus Johannes De Groot , Adrianus Johannes Maria Giesbers , Johannes Joseph Janssen , Paul Janssen , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Marcel Peter Meijer , Wouter Rogier Meijerink , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Raymond Olsman , Hrishikesh Patel , Mária Péter , Gerrit Van Den Bosch , Wilhelmus Theodorus Anthonius Johannes Van Den Einden , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
IPC: G03F1/64
CPC classification number: G03F1/64
Abstract: The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.
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公开(公告)号：US20210311385A1
公开(公告)日：2021-10-07
申请号：US17347734
申请日：2021-06-15
Applicant: ASML NETHERLANDS B.V.
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.
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公开(公告)号：US11971654B2
公开(公告)日：2024-04-30
申请号：US18208188
申请日：2023-06-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
CPC classification number: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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公开(公告)号：US11624980B2
公开(公告)日：2023-04-11
申请号：US17347734
申请日：2021-06-15
Applicant: ASML NETHERLANDS B.V.
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.
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公开(公告)号：US11287737B2
公开(公告)日：2022-03-29
申请号：US16761683
申请日：2018-11-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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