Patent search ap:("ASML NETHERLANDS B.V.") AND inv:"Johannes Christiaan Leonardus Franken" Page 1

1.

发明授权
Radiation source for an EUV optical lithographic apparatus, and lithographic apparatus comprising such a radiation source 有权

公开(公告)号：US09753372B2

公开(公告)日：2017-09-05

申请号：US14899196

申请日：2014-06-05

Applicant: ASML Netherlands B.V.

Inventor： Johannes Christiaan Leonardus Franken

IPC: G03B27/54 , G03F7/20 , H05G2/00

CPC classification number: G03F7/70033 , G03F7/70916 , H05G2/005

Abstract: A radiation source generates extreme ultraviolet radiation. The radiation source comprises a plasma formation site located at a position in which a fuel will be contacted by a beam of radiation to form a plasma. A receiving structure is provided to trap debris particles on its surface that are generated with the formation of the plasma. The receiving structure has a rod-shaped heater element for heating the receiving surface, the device preventing large droplets of fuel from forming on the receiving surface. Instead, the trapped fuel is melted off the receiving surface.

2.

发明申请
METHOD OF MANUFACTURING A MEMBRANE ASSEMBLY 有权

公开(公告)号：US20240369920A1

公开(公告)日：2024-11-07

申请号：US18774721

申请日：2024-07-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan VAN ZWOL , Sander Baltussen , Dennis De Graaf , Johannes Christiaan Leonardus Franken , Adrianus Johannes Maria Giesbers , Alexander Ludwig Klein , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Alexey Sergeevich Kuznetsov , Arnoud Willem Notenboom , Mahdiar Valefi , Marcus Adrianus Van De Kerkhof , Wilhelmus Theodorus Anthonius Johannes Van Den Einden , Ties Wouter Van Der Woord , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov

IPC: G03F1/64 , G03F7/00

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.

3.

发明授权
Radiation source and lithographic apparatus 有权

公开(公告)号：US10394141B2

公开(公告)日：2019-08-27

申请号：US15661888

申请日：2017-07-27

Applicant: ASML Netherlands B.V.

Inventor： Michel Riepen , Dzmitry Labetski , Wilbert Jan Mestrom , Wim Ronald Kampinga , Jan Okke Nieuwenkamp , Jacob Brinkert , Henricus Jozef Castelijns , Nicolaas Ten Kate , Hendrikus Gijsbertus Schimmel , Hans Jansen , Dennis Jozef Maria Paulussen , Brian Vernon Virgo , Reinier Theodorus Martinus Jilisen , Ramin Badie , Albert Pieter Rijpma , Johannes Christiaan Leonardus Franken , Peter Van Putten , Gerrit Van Der Straaten

IPC: H05G2/00 , G03F7/20 , G21K5/08 , G21K1/06 , F15D1/00

Abstract: A radiation source comprising a fuel source configured to deliver fuel to a location from which the fuel emits EUV radiation. The radiation source further comprises an immobile fuel debris receiving surface provided with a plurality of grooves. The grooves have orientations which are arranged to direct the flow of liquid fuel under the influence of gravity in one or more desired directions.

4.

发明授权
Method of manufacturing a membrane assembly 有权

公开(公告)号：US12072620B2

公开(公告)日：2024-08-27

申请号：US17278356

申请日：2019-10-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter-Jan Van Zwol , Sander Baltussen , Dennis De Graaf , Johannes Christiaan Leonardus Franken , Adrianus Johannes Maria Giesbers , Alexander Ludwig Klein , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Alexey Sergeevich Kuznetsov , Arnoud Willem Notenboom , Mahdiar Valefi , Marcus Adrianus Van de Kerkhof , Wilhelmus Theodorus Anthonius Johannes Van den Einden , Ties Wouter Van der Woord , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov

IPC: G03F1/64 , G03F7/00

CPC classification number: G03F1/64 , G03F7/7015

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.