公开(公告)号：US11774868B2

公开(公告)日：2023-10-03

申请号：US17600631

申请日：2020-04-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Nirupam Banerjee ,  Johan Franciscus Maria Beckers ,  Peter Brakhage ,  Arend Johannes Donkerbroek ,  Daniel Grimm ,  Tim Rathje ,  Martin Tilke ,  Sandro Wricke

IPC: G03F7/00 ,  C23C14/34 ,  C23C14/58 ,  C23C16/455

CPC classification number: G03F7/7085 ,  C23C14/34 ,  C23C14/5826 ,  C23C16/45525 ,  G03F7/70341

Abstract: An image sensor for immersion lithography, the image sensor including: a grating; an absorber layer on the grating, the absorber layer configured to absorb radiation; and a liquidphobic coating at an upper surface of the image sensor, wherein a protective layer is provided between the absorber layer and the liquidphobic layer, the protective layer being less reactive than the absorber layer to an immersion liquid.

公开(公告)号：US10976196B2

公开(公告)日：2021-04-13

申请号：US16488259

申请日：2018-02-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Joost André Klugkist ,  Vadim Yevgenyevich Banine ,  Johan Franciscus Maria Beckers ,  Madhusudhanan Jambunathan ,  Maxim Aleksandrovich Nasalevich ,  Andrey Nikipelov ,  Roland Johannes Wilhelmus Stas ,  David Ferdinand Vles ,  Wilhelmus Jacobus Johannes Welters ,  Sandro Wricke

IPC: G01J1/42 ,  G03F7/20

Abstract: A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.