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公开(公告)号:US11774868B2
公开(公告)日:2023-10-03
申请号:US17600631
申请日:2020-04-07
Applicant: ASML NETHERLANDS B.V.
Inventor: Nirupam Banerjee , Johan Franciscus Maria Beckers , Peter Brakhage , Arend Johannes Donkerbroek , Daniel Grimm , Tim Rathje , Martin Tilke , Sandro Wricke
IPC: G03F7/00 , C23C14/34 , C23C14/58 , C23C16/455
CPC classification number: G03F7/7085 , C23C14/34 , C23C14/5826 , C23C16/45525 , G03F7/70341
Abstract: An image sensor for immersion lithography, the image sensor including: a grating; an absorber layer on the grating, the absorber layer configured to absorb radiation; and a liquidphobic coating at an upper surface of the image sensor, wherein a protective layer is provided between the absorber layer and the liquidphobic layer, the protective layer being less reactive than the absorber layer to an immersion liquid.
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公开(公告)号:US11796921B2
公开(公告)日:2023-10-24
申请号:US17427412
申请日:2020-01-30
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F7/7055 , G03F7/70591
Abstract: A lithographic apparatus including a projection system having an optical axis and configured to project a radiation beam. The apparatus includes a measurement unit arranged to measure the radiation beam projected by the projection system, the measurement unit having an opening through which the radiation beam passes in use, and a sensing surface extending transverse to the optical axis and arranged to measure the radiation beam passing through the opening. The apparatus is configured to move the sensing surface in a plane transverse to the optical axis between a plurality of measurement positions. The radiation beam defines a view in the plane, and the measurement unit is configured such that the sensing surface captures, in each measurement position, a portion of the view smaller than 100% of the view.
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3.
公开(公告)号:US11137695B2
公开(公告)日:2021-10-05
申请号:US16339273
申请日:2017-09-08
Applicant: ASML Netherlands B.V.
Inventor: Arend Johannes Donkerbroek , Jeroen Cottaar , Thomas Theeuwes , Erik Johan Koop
IPC: G03F9/00 , G03F7/20 , H01L21/027
Abstract: Method of measuring a height profile of one or more substrates is provided comprising measuring a first height profile of one or more fields on a substrate using a first sensor arrangement, the first height profile being the sum of a first interfield part and a first intrafield part, measuring a second height profile of one or more further fields on the substrate or on a further substrate using a second sensor arrangement, the second height profile being the sum of a second interfield part and a second intrafield part, determining from the measurements with the first sensor arrangement an average first intrafield part, and determining the height profile of the further fields from the second interfield part and the average first intrafield part thereby correcting the measurements of the second sensor arrangement.
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