Semiconductor processing system with gas curtain
    12.
    发明授权
    Semiconductor processing system with gas curtain 失效
    带气幕的半导体处理系统

    公开(公告)号:US5997588A

    公开(公告)日:1999-12-07

    申请号:US729550

    申请日:1996-10-11

    Abstract: A gas curtain for use with a semiconductor processing system to prevent unwanted gases from entering a processing chamber. The gas curtain includes both upward and downward flows of gas surrounding an isolation valve adjacent a delivery port into the processing chamber. In the valve open position, the downward flows extends between the valve and the delivery port, and the upward flow extends in an opposite direction behind the isolation valve. In the valve closed position, one of the flows extends through a slot in the isolation valve, while the other flow is directed in an opposite direction on the rear side of the isolation valve. In a method of using the gas curtain apparatus, a pick-up wand operating on a Bernoulli principal uses gases which are unwanted in the processing chamber, and just prior to loading wafers into the processing chamber, the gas flow in the Bernoulli wand is switched from a first gas to a second gas. Desirably, the second gas is hydrogen. The Bernoulli wand passes through the gas curtain before entering the processing chamber to remove any fugitive particles, moisture and unwanted gases. An exhaust located proximate to an input/output chamber creates a continuous pressure gradient in the handling chamber toward the input/output chamber further helping to prevent unwanted gases from entering the processing chamber.

    Abstract translation: 一种与半导体处理系统一起使用以防止不需要的气体进入处理室的气幕。 气幕包括邻近进入处理室的输送口的隔离阀周围的向上和向下的气体流。 在阀打开位置,向下的流动在阀和输送口之间延伸,并且向上的流沿隔离阀的相反方向延伸。 在阀关闭位置,其中一个流动延伸通过隔离阀中的槽,而另一个流在隔离阀的后侧上以相反的方向被引导。 在使用气幕装置的方法中,在伯努利主体上操作的拾取棒使用在处理室中不需要的气体,并且在将晶片装入处理室之前,在伯努利棒中的气流被切换 从第一气体到第二气体。 期望地,第二气体是氢气。 伯努利魔杖在进入处理室之前通过气帘,以除去任何流淌的颗粒,水分和不需要的气体。 位于输入/输出室附近的废气在处理室中朝向输入/输出室产生连续的压力梯度,进一步有助于防止不需要的气体进入处理室。

    Driver circuit with diagnostics and over voltage protection
    13.
    发明授权
    Driver circuit with diagnostics and over voltage protection 失效
    具有诊断和过压保护的驱动电路

    公开(公告)号:US5467240A

    公开(公告)日:1995-11-14

    申请号:US129506

    申请日:1993-09-30

    CPC classification number: H02H11/005 H02H11/006 H05B39/02

    Abstract: The present invention provides a general purpose driver circuit. The driver circuit is connected to a load. The driver circuit includes a controller for producing a control signal indicative of a desired output current. The driver circuit generates an output current having a magnitude responsive to the magnitude of the control signal. The driver circuit produces a system voltage feedback signal and an output voltage feedback signal and responsively performs output load condition diagnostics.

    Abstract translation: 本发明提供通用驱动电路。 驱动电路连接到负载。 驱动器电路包括用于产生指示期望的输出电流的控制信号的控制器。 驱动器电路产生具有响应于控制信号的幅度的幅度的输出电流。 驱动器电路产生系统电压反馈信号和输出电压反馈信号,并且响应地执行输出负载状况诊断。

    Wafer support system
    15.
    发明授权
    Wafer support system 失效
    晶圆支撑系统

    公开(公告)号:US07655093B2

    公开(公告)日:2010-02-02

    申请号:US11668409

    申请日:2007-01-29

    Abstract: A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers.

    Abstract translation: 一种晶片支撑系统,其包括具有顶部和底部部分以及穿过其的气体流动通道的基座。 从形成在基座的顶部的凹部突出的一个或多个间隔件相对于凹部以间隔的关系支撑晶片。 吹扫气体被引入到基座的底部,并且穿过气体流动通道,以在凹槽中的至少一个圆形阵列的出口和在间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进,以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域,以引起隔离物周围的保护性吹扫气体的连续流动。

    Process chamber with downstream getter plate
    16.
    发明授权
    Process chamber with downstream getter plate 失效
    具有下游吸气板的处理室

    公开(公告)号:US06464792B1

    公开(公告)日:2002-10-15

    申请号:US09613437

    申请日:2000-07-11

    Abstract: An improved chemical vapor deposition reaction chamber having an internal support plate to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross-section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls. A central horizontal support plate is provided between two lateral side rails of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region, with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.

    Abstract translation: 改进的化学气相沉积反应室具有内部支撑板以实现减压处理。 该腔室具有垂直横向的透镜状横截面,在双凸上壁和下壁之间具有宽的水平尺寸和较短的垂直尺寸。 中央水平支撑板设置在腔室的两个侧向侧轨之间。 在支撑板中形成大的圆形矩形孔,用于定位其上放置晶片的可旋转基座。 基座的轴向下延伸穿过孔,并通过从腔室垂下的下管。 支撑板将反应室分离成上部区域和下部区域,其中吹扫气体通过下部管道被引入下部区域,以防止其中不希望的沉积。 温度补偿环设置在基座周围并由连接到支撑板的手指支撑。 温度补偿环可以是圆形的,或者可以被构造成符合支撑板孔的圆形矩形形状。 环可以比上游更远离基座延伸下游。 可以在环形温度补偿环和圆形矩形孔之间设置单独的牺牲石英板。 石英板可以具有与孔紧密邻接的水平部分和垂直唇缘,以防止支撑板的失透。 气体喷射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。 气体喷射器包括跨过室横向设置的多个独立控制的通道,通道在喷射器的出口处汇合,以允许在到达晶片之前将分离的流的相邻纵向边缘混合。

    Wafer support system
    17.
    发明授权
    Wafer support system 有权
    晶圆支撑系统

    公开(公告)号:US06343183B1

    公开(公告)日:2002-01-29

    申请号:US09605094

    申请日:2000-06-27

    Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

    Abstract translation: 一种晶片支撑系统,其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部,并且穿过气体流动通道,在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进,以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域,以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

    System and method for managing access of a fleet of mobile machines to a
resource having multiple entry points
    20.
    发明授权
    System and method for managing access of a fleet of mobile machines to a resource having multiple entry points 失效
    用于管理移动机器队伍对具有多个入口点的资源的访问的系统和方法

    公开(公告)号:US5897595A

    公开(公告)日:1999-04-27

    申请号:US770208

    申请日:1996-12-19

    Abstract: The invention is a system and method for managing a resource having multiple entry points. Each mobile machine includes a queue manager for generating a queue position request upon approach to the resource. A resource manager establishes queues, one for each entry point to the resource, to control access to the resource. Upon receiving a queue position request from an approaching mobile machine, the resource manager determines which queue to place the mobile machine, and then generates a queue position and sends a queue position signal to the approaching mobile machine.

    Abstract translation: 本发明是用于管理具有多个入口点的资源的系统和方法。 每个移动机器包括队列管理器,用于在接近资源时生成队列位置请求。 资源管理器建立队列,为资源的每个入口点设置一个队列,以控制对资源的访问。 在从接近的移动机器接收到队列位置请求时,资源管理器确定哪个队列放置在移动机器上,然后生成队列位置,并向接近的移动机器发送队列位置信号。

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