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    Adhesion to Copper and Copper Electromigration Resistance
    11.
    发明申请
    Adhesion to Copper and Copper Electromigration Resistance 有权
    铜和铜的电迁移阻力

    公开(公告)号：US20090236745A1

    公开(公告)日：2009-09-24

    申请号：US12406467

    申请日：2009-03-18

    申请人： Raymond Nicholas Vrtis ,  Laura M. Matz ,  Mark Leonard O'Neill

    发明人： Raymond Nicholas Vrtis ,  Laura M. Matz ,  Mark Leonard O'Neill

    IPC分类号： H01L23/52 ,  H01L21/302 ,  B32B1/06

    CPC分类号： H01L21/76849 ,  C23C16/02 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76834 ,  H01L21/76883 ,  Y10T428/13

    摘要： The present invention relates to the improved adhesion between a patterned conductive metal layer, usually a copper layer, and a patterned barrier dielectric layer. The structure with the improved adhesion comprises an adhesion layer between a patterned barrier dielectric layer and a patterned conductive metal layer. The adhesion layer improves adhesion between the metal layer and the barrier layer without increasing the copper bulk electrical resistance. The method of making the structure with the improved adhesion comprises steps of thermal expositing the patterned conductive metal layer to an organometallic precursor to deposit an adhesion layer at least on the top of the patterned conductive metal layer.

    摘要翻译： 本发明涉及图案化导电金属层（通常为铜层）和图案化势垒介电层之间的改进的粘合性。 具有改进的粘附性的结构包括在图案化阻挡介电层和图案化的导电金属层之间的粘合层。 粘附层改善了金属层和阻挡层之间的粘附性，而不增加铜体电阻。 制造具有改善的粘合性的结构的方法包括将图案化的导电金属层热展开到有机金属前体的步骤，以至少在图案化的导电金属层的顶部沉积粘附层。

    Activated Chemical Process for Enhancing Material Properties of Dielectric Films
    13.
    发明申请
    Activated Chemical Process for Enhancing Material Properties of Dielectric Films 有权
    用于提高介电薄膜材料性能的活性化学工艺

    公开(公告)号：US20080199977A1

    公开(公告)日：2008-08-21

    申请号：US12023552

    申请日：2008-01-31

    申请人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Dino Sinatore

    发明人： Scott Jeffrey Weigel ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Dino Sinatore

    IPC分类号： H01L21/31 ,  H01L21/00

    CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274

    摘要： A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.

    摘要翻译： 一种用于恢复具有第一介电常数和至少一个表面的含硅介电材料层的介电常数的方法，其中所述含硅介电材料层的第一介电常数已经增加到第二介电常数， 该方法包括以下步骤：使含硅介电材料层的至少一个表面与含硅流体接触; 以及将所述含硅介电材料层的所述至少一个表面暴露于选自以下的能量源：UV辐射，热和电子束，其中所述含硅介电材料层具有第三电介质 常数，其在将含硅介电材料层暴露于能量源之后低于第二介电常数。

    Porous low dielectric constant compositions and methods for making and using same
    14.
    发明授权
    Porous low dielectric constant compositions and methods for making and using same 有权
    多孔低介电常数组合物及其制备和使用方法

    公开(公告)号：US07332445B2

    公开(公告)日：2008-02-19

    申请号：US11228223

    申请日：2005-09-19

    申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Eugene Joseph Karwacki, Jr. ,  Raymond Nicholas Vrtis ,  Jean Louise Vincent

    发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Eugene Joseph Karwacki, Jr. ,  Raymond Nicholas Vrtis ,  Jean Louise Vincent

    IPC分类号： H01L21/31

    CPC分类号： C03C3/045 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

    摘要： A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

    摘要翻译： 多孔有机硅酸盐玻璃（OSG）膜：其中，X，Y，X，Y， 其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为5〜30原子％，y为10〜 z为0〜15原子％，具有作为甲基（Si-CH 3 3）的碳原子的硅酸盐网络，并且含有直径小于3nm的等效球径，介电常数小于2.7的孔 。 通过化学气相沉积法从有机硅烷和/或有机硅氧烷前体和独立的成孔前体沉积初步膜。 致孔剂前体在预备膜内形成孔，随后被除去以提供多孔膜。 组合物，成膜试剂盒包括含有至少一个Si-H键的有机硅烷和/或有机硅氧烷化合物，以及含有醇，醚，羰基，羧酸，酯，硝基，伯胺，仲胺和/或叔碳原子的烃的致孔剂前体 胺官能团或组合。

    Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
    15.
    发明授权
    Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants 有权
    使用致孔剂和/或孔隙化前体来提供具有低介电常数的多孔有机硅玻璃膜的方法

    公开(公告)号：US06846515B2

    公开(公告)日：2005-01-25

    申请号：US10150798

    申请日：2002-05-17

    申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

    发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

    IPC分类号： C23C16/40

    CPC分类号： C23C16/401

    摘要： A method for providing a porous organosilica glass (OSG) film that consists of a single phase of a material represented by the formula SivOwCxHyFz, v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6 is disclosed herein. In one aspect of the present invention, the film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or alternatively bonded to, the precursors. The porogens are subsequently removed to provide the porous film. In another aspect of the present invention, porogenated precursors are used for providing the film.

    摘要翻译： 一种提供由式SivOwCxHyFz，v + w + x + y + z = 100％表示的材料的单相组成的多孔有机硅玻璃（OSG）膜的方法，v为10〜35原子％，w 为10〜65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中膜的孔隙和介电常数小于2.6 。 在本发明的一个方面中，通过化学气相沉积方法提供膜，其中从有机硅烷和/或有机硅氧烷前体和成孔剂（孔隙原）沉积预备膜，其可以独立于或替代地键合 前体。 随后除去致孔剂以提供多孔膜。 在本发明的另一方面，使用致孔前体来提供该膜。

    Stabilizers for the stabilization of unsaturated hydrocarbon-based precursor
    19.
    发明授权
    Stabilizers for the stabilization of unsaturated hydrocarbon-based precursor 有权
    用于稳定不饱和烃类前体的稳定剂

    公开(公告)号：US08440099B2

    公开(公告)日：2013-05-14

    申请号：US12128381

    申请日：2008-05-28

    申请人： Steven Gerard Mayorga ,  Kelly Ann Chandler ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    发明人： Steven Gerard Mayorga ,  Kelly Ann Chandler ,  Mary Kathryn Haas ,  Mark Leonard O'Neill ,  Dino Sinatore

    IPC分类号： C09K3/00 ,  C09K15/20

    CPC分类号： C07C7/20 ,  C07C2602/42 ,  C07C13/39

    摘要： A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, and a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, at least one polar liquid and a stabilizer selected from the group consisting of a hydroxybenzophenone, a nitroxyl radical based stabilizer and a hydroquinone based stabilizer.A method for stabilizing unsaturated hydrocarbon-based precursor material against the polymerization comprises providing a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.A method for stabilizing a mixture of unsaturated hydrocarbon-based precursor material with at lease one polar liquid against the polymerization comprises adding to the mixture, a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.

    摘要翻译： 稳定化的组合物基本上由不饱和烃基材料和选自羟基二苯甲酮和基于硝酰基的稳定剂组成的组中的稳定剂组成。 稳定化的组合物基本上由不饱和烃基材料，至少一种极性液体和选自羟基二苯甲酮，基于硝酰基的稳定剂和氢醌基稳定剂的稳定剂组成。 稳定不饱和烃基前体材料以抗聚合的方法包括提供选自羟基二苯甲酮和基于硝酰基的稳定剂的稳定剂。 用于使不饱和烃类前体材料与至少一种极性液体的混合物与聚合反应的方法包括向混合物中加入选自羟基二苯甲酮和基于硝酰基的稳定剂的稳定剂。

    Low-impurity organosilicon product as precursor for CVD
    20.
    发明授权
    Low-impurity organosilicon product as precursor for CVD 有权
    低杂质有机硅产品作为CVD的前体

    公开(公告)号：US08329933B2

    公开(公告)日：2012-12-11

    申请号：US13205015

    申请日：2011-08-08

    申请人： Steven Gerard Mayorga ,  Mark Leonard O'Neill ,  Kelly Ann Chandler

    发明人： Steven Gerard Mayorga ,  Mark Leonard O'Neill ,  Kelly Ann Chandler

    IPC分类号： C07F7/04

    CPC分类号： C07F7/20 ,  C07F7/1804

    摘要： The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.

    摘要翻译： 本发明提供一种包含二乙氧基甲基硅烷的有机硅组合物，溶解的残留氯化物的浓度以及溶解的残余氯化物清除剂的浓度，当与包含二乙氧基甲基硅烷的另一种组合物组合时，其不产生不需要的氯化物盐沉淀物。