公开(公告)号：US08273642B2

公开(公告)日：2012-09-25

申请号：US12897771

申请日：2010-10-04

Applicant: Chen-Hua Tsai ,  Po-Jui Liao ,  Tzu-Feng Kuo ,  Ching-I Li ,  Cheng-Tzung Tsai

Inventor： Chen-Hua Tsai ,  Po-Jui Liao ,  Tzu-Feng Kuo ,  Ching-I Li ,  Cheng-Tzung Tsai

IPC: H01L21/425

CPC classification number: H01L21/26586 ,  H01L21/26506 ,  H01L21/268 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/66628 ,  H01L29/7834

Abstract: A SiC region and a source/drain region are formed such that the SiC region includes a first portion overlapping the source/drain region and a second portion protruding from the source/drain region to a position beneath the LDD region. The concentration of crystalline SiC in the second portion is higher than the concentration of crystalline SiC in the first portion. The SiC region may be formed through a normal implantation before the second spacer is formed, or the SiC region may be formed through a tilt implantation or deposition epitaxially in a recess having a sigma-shape like sidewall after the second spacer is formed.

公开(公告)号：US20110177665A1

公开(公告)日：2011-07-21

申请号：US12691723

申请日：2010-01-21

Applicant: Chan-Lon Yang ,  Ching-I Li ,  Tzu-Feng Kuo

Inventor： Chan-Lon Yang ,  Ching-I Li ,  Tzu-Feng Kuo

IPC: H01L21/336 ,  H01L21/26

CPC classification number: H01L21/268 ,  H01L29/6659 ,  H01L29/7833

Abstract: A thermal process is disclosed. The thermal process preferably includes the steps of: providing a semiconductor substrate ready to be heated; and utilizing at least a first heating beam and a second heating beam with different energy density to heat the semiconductor substrate simultaneously. Accordingly, the present invention no only eliminates the need of switching between two different thermal processing equipments and shortens the overall fabrication cycle time, but also improves the pattern effect caused by the conventional front side heating.

Abstract translation: 公开了一种热处理。 热处理优选包括以下步骤：提供准备加热的半导体衬底; 并且利用至少第一加热束和具有不同能量密度的第二加热束同时加热半导体衬底。 因此，本发明不仅消除了在两个不同的热处理设备之间切换的需要，并且缩短了整个制造周期时间，而且还改善了由常规的前侧加热引起的图案效应。

公开(公告)号：US20110159658A1

公开(公告)日：2011-06-30

申请号：US13043443

申请日：2011-03-08

Applicant: Tsai-Fu Hsiao ,  Ching-I Li ,  Po-Yuan Chen ,  Chun-An Lin ,  Hsiang-Ying Wang ,  Chao-Chun Chen ,  Chin-Cheng Chien

Inventor： Tsai-Fu Hsiao ,  Ching-I Li ,  Po-Yuan Chen ,  Chun-An Lin ,  Hsiang-Ying Wang ,  Chao-Chun Chen ,  Chin-Cheng Chien

IPC: H01L21/265

CPC classification number: H01L21/324 ,  H01L21/265 ,  H01L21/2652 ,  H01L29/6659

Abstract: A method for fabricating a metal-oxide semiconductor transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and performing a first ion implantation process to implant a first molecular cluster having carbon, boron, and hydrogen into the semiconductor substrate at two sides of the gate structure for forming a doped region, wherein the molecular weight of the first molecular cluster is greater than 100.

Abstract translation: 公开了一种制造金属氧化物半导体晶体管的方法。 该方法包括以下步骤：提供半导体衬底; 在所述半导体衬底上形成栅极结构; 以及执行第一离子注入工艺以在所述栅极结构的两侧将具有碳，硼和氢的第一分子簇注入到所述半导体衬底中，以形成掺杂区域，其中所述第一分子簇的分子量大于100 。

公开(公告)号：US07776728B2

公开(公告)日：2010-08-17

申请号：US11681745

申请日：2007-03-02

Applicant: Chan-Ion Yang ,  Ching-I Li

Inventor： Chan-Ion Yang ,  Ching-I Li

IPC: H01L21/20

CPC classification number: B23K26/03 ,  H01L21/268

Abstract: A rapid thermal process method contains providing a substrate, performing a pre-heating process to at least a first portion of the substrate by means of a first laser beam, and performing a rapid heating process to the pre-heated first portion of the substrate by means of a second laser beam.

Abstract translation: 快速热处理方法包括提供基板，通过第一激光束对基板的至少第一部分进行预热处理，并且通过以下步骤对基板的预加热的第一部分进行快速加热处理： 第二激光束的装置。

公开(公告)号：US20080210667A1

公开(公告)日：2008-09-04

申请号：US11681745

申请日：2007-03-02

Applicant: Chan-lon Yang ,  Ching-I Li

Inventor： Chan-lon Yang ,  Ching-I Li

IPC: B23K26/00

CPC classification number: B23K26/03 ,  H01L21/268

Abstract: A rapid thermal process method contains providing a substrate, performing a pre-heating process to at least a first portion of the substrate by means of a first laser beam, and performing a rapid heating process to the pre-heated first portion of the substrate by means of a second laser beam.

Abstract translation: 快速热处理方法包括提供基板，通过第一激光束对基板的至少第一部分进行预热处理，并且通过以下步骤对基板的预加热的第一部分进行快速加热处理： 第二激光束的装置。

公开(公告)号：US08921206B2

公开(公告)日：2014-12-30

申请号：US13308513

申请日：2011-11-30

Applicant: Chan-Lon Yang ,  Ching-I Li ,  Ger-Pin Lin ,  I-Ming Lai ,  Yun-San Huang ,  Chin-I Liao ,  Chin-Cheng Chien

Inventor： Chan-Lon Yang ,  Ching-I Li ,  Ger-Pin Lin ,  I-Ming Lai ,  Yun-San Huang ,  Chin-I Liao ,  Chin-Cheng Chien

IPC: H01L21/36

CPC classification number: H01L29/6656 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7847 ,  H01L29/7848

Abstract: First, a substrate with a recess is provided in a semiconductor process. Second, an embedded SiGe layer is formed in the substrate. The embedded SiGe layer includes an epitaxial SiGe material which fills up the recess. Then, a pre-amorphization implant (PAI) procedure is carried out on the embedded SiGe layer to form an amorphous region. Next, a source/drain implanting procedure is carried out on the embedded SiGe layer to form a source doping region and a drain doping region. Later, a source/drain annealing procedure is carried out to form a source and a drain in the substrate. At least one of the pre-amorphization implant procedure and the source/drain implanting procedure is carried out in a cryogenic procedure below −30° C.

Abstract translation: 首先，在半导体工艺中设置具有凹部的基板。 第二，在衬底中形成嵌入的SiGe层。 嵌入的SiGe层包括填充凹槽的外延SiGe材料。 然后，在嵌入的SiGe层上进行预非晶化植入（PAI）工艺以形成非晶区域。 接下来，在嵌入的SiGe层上进行源极/漏极注入工艺以形成源极掺杂区域和漏极掺杂区域。 之后，进行源极/漏极退火处理以在衬底中形成源极和漏极。 前非晶化植入程序和源极/漏极注入程序中的至少一个在低于-30℃的低温过程中进行。

公开(公告)号：US08575043B2

公开(公告)日：2013-11-05

申请号：US13191430

申请日：2011-07-26

Applicant: Chan-Lon Yang ,  Tzu-Feng Kuo ,  Hsin-Huei Wu ,  Ching-I Li ,  Shu-Yen Chan

Inventor： Chan-Lon Yang ,  Tzu-Feng Kuo ,  Hsin-Huei Wu ,  Ching-I Li ,  Shu-Yen Chan

IPC: H01L21/00 ,  B23K26/02 ,  B23K26/08

CPC classification number: H01L21/268 ,  H01L21/26586

Abstract: A semiconductor device includes a plurality of active areas disposed on a semiconductor substrate. A manufacturing method of the semiconductor device includes performing a first annealing process on the semiconductor substrate by emitting a first laser alone a first scanning direction, and performing a second annealing process on the semiconductor substrate by emitting a second laser alone a second scanning direction. The first scanning direction and the second scanning direction have an included angle.

Abstract translation: 半导体器件包括设置在半导体衬底上的多个有源区。 半导体器件的制造方法包括：通过在第一扫描方向上单独地发射第一激光，对半导体衬底进行第一退火处理，并且通过在第二扫描方向上单独地发射第二激光，对半导体衬底进行第二退火处理。 第一扫描方向和第二扫描方向具有夹角。

公开(公告)号：US20130203226A1

公开(公告)日：2013-08-08

申请号：US13368006

申请日：2012-02-07

Applicant: Chan-Lon Yang ,  Ching-Nan Hwang ,  Chi-Heng Lin ,  Chun-Yao Yang ,  Ger-Pin Lin ,  Ching-I Li

Inventor： Chan-Lon Yang ,  Ching-Nan Hwang ,  Chi-Heng Lin ,  Chun-Yao Yang ,  Ger-Pin Lin ,  Ching-I Li

IPC: H01L21/283 ,  H01L21/8234 ,  H01L21/762

CPC classification number: H01L28/24 ,  H01L21/26593 ,  H01L21/32155 ,  H01L21/76224 ,  H01L27/0629 ,  H01L28/20

Abstract: A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a forntside heating is different from a power for a backside heating.

Abstract translation: 提供半导体工艺，包括以下步骤。 在基板上形成多晶硅层。 对多晶硅层进行不对称双面加热处理，其中用于正面加热的功率不同于用于背面加热的功率。

公开(公告)号：US08481391B2

公开(公告)日：2013-07-09

申请号：US13110294

申请日：2011-05-18

Applicant: Chin-I Liao ,  Ching-Hong Jiang ,  Ching-I Li ,  Shu-Yen Chan ,  Chin-Cheng Chien

Inventor： Chin-I Liao ,  Ching-Hong Jiang ,  Ching-I Li ,  Shu-Yen Chan ,  Chin-Cheng Chien

IPC: H01L21/336

CPC classification number: H01L29/7842 ,  H01L21/3247 ,  H01L29/66636 ,  H01L29/7848

Abstract: A process for manufacturing a stress-providing structure is applied to the fabrication of a semiconductor device. Firstly, a substrate with a channel structure is provided. A silicon nitride layer is formed over the substrate by chemical vapor deposition in a halogen-containing environment. An etching process is performed to partially remove the silicon nitride layer to expose a portion of a surface of the substrate beside the channel structure. The exposed surface of the substrate is etched to form a recess in the substrate. Then, the substrate is thermally treated at a temperature between 750° C. and 820° C. After the substrate is thermally treated, a stress-providing material is filled in the recess to form a stress-providing structure within the recess. The semiconductor device includes a substrate, a recess and a stress-providing structure. The recess has a round inner surface. The stress-providing structure has a round outer surface.

Abstract translation: 制造应力提供结构的方法被应用于半导体器件的制造。 首先，提供具有沟道结构的衬底。 通过化学气相沉积在含卤素的环境中在衬底上形成氮化硅层。 执行蚀刻处理以部分地去除氮化硅层以暴露基板的表面的一部分在通道结构旁边。 蚀刻衬底的暴露表面以在衬底中形成凹陷。 然后，将衬底在750℃和820℃之间的温度下进行热处理。在对衬底进行热处理之后，在凹部中填充应力提供材料，以在凹部内形成应力提供结构。 半导体器件包括衬底，凹部和应力提供结构。 凹槽具有圆形的内表面。 应力提供结构具有圆形外表面。

公开(公告)号：US20130026543A1

公开(公告)日：2013-01-31

申请号：US13191430

申请日：2011-07-26

Applicant: Chan-Lon Yang ,  Tzu-Feng Kuo ,  Hsin-Huei Wu ,  Ching-I Li ,  Shu-Yen Chan

Inventor： Chan-Lon Yang ,  Tzu-Feng Kuo ,  Hsin-Huei Wu ,  Ching-I Li ,  Shu-Yen Chan

IPC: H01L21/268 ,  H01L29/772

CPC classification number: H01L21/268 ,  H01L21/26586

Abstract: A semiconductor device includes a plurality of active areas disposed on a semiconductor substrate. A manufacturing method of the semiconductor device includes performing a first annealing process on the semiconductor substrate by emitting a first laser alone a first scanning direction, and performing a second annealing process on the semiconductor substrate by emitting a second laser alone a second scanning direction. The first scanning direction and the second scanning direction have an incident angle.

Abstract translation: 半导体器件包括设置在半导体衬底上的多个有源区。 半导体器件的制造方法包括：通过在第一扫描方向上单独地发射第一激光，对半导体衬底进行第一退火处理，并且通过在第二扫描方向上单独地发射第二激光，对半导体衬底进行第二退火处理。 第一扫描方向和第二扫描方向具有入射角。