公开(公告)号：US08273642B2

公开(公告)日：2012-09-25

申请号：US12897771

申请日：2010-10-04

Applicant: Chen-Hua Tsai ,  Po-Jui Liao ,  Tzu-Feng Kuo ,  Ching-I Li ,  Cheng-Tzung Tsai

Inventor： Chen-Hua Tsai ,  Po-Jui Liao ,  Tzu-Feng Kuo ,  Ching-I Li ,  Cheng-Tzung Tsai

IPC: H01L21/425

CPC classification number: H01L21/26586 ,  H01L21/26506 ,  H01L21/268 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/66628 ,  H01L29/7834

Abstract: A SiC region and a source/drain region are formed such that the SiC region includes a first portion overlapping the source/drain region and a second portion protruding from the source/drain region to a position beneath the LDD region. The concentration of crystalline SiC in the second portion is higher than the concentration of crystalline SiC in the first portion. The SiC region may be formed through a normal implantation before the second spacer is formed, or the SiC region may be formed through a tilt implantation or deposition epitaxially in a recess having a sigma-shape like sidewall after the second spacer is formed.

公开(公告)号：US20110177665A1

公开(公告)日：2011-07-21

申请号：US12691723

申请日：2010-01-21

Applicant: Chan-Lon Yang ,  Ching-I Li ,  Tzu-Feng Kuo

Inventor： Chan-Lon Yang ,  Ching-I Li ,  Tzu-Feng Kuo

IPC: H01L21/336 ,  H01L21/26

CPC classification number: H01L21/268 ,  H01L29/6659 ,  H01L29/7833

Abstract: A thermal process is disclosed. The thermal process preferably includes the steps of: providing a semiconductor substrate ready to be heated; and utilizing at least a first heating beam and a second heating beam with different energy density to heat the semiconductor substrate simultaneously. Accordingly, the present invention no only eliminates the need of switching between two different thermal processing equipments and shortens the overall fabrication cycle time, but also improves the pattern effect caused by the conventional front side heating.

Abstract translation: 公开了一种热处理。 热处理优选包括以下步骤：提供准备加热的半导体衬底; 并且利用至少第一加热束和具有不同能量密度的第二加热束同时加热半导体衬底。 因此，本发明不仅消除了在两个不同的热处理设备之间切换的需要，并且缩短了整个制造周期时间，而且还改善了由常规的前侧加热引起的图案效应。

公开(公告)号：US20120083090A1

公开(公告)日：2012-04-05

申请号：US12897771

申请日：2010-10-04

Applicant: Chen-Hua Tsai ,  Po-Jui Liao ,  Tzu-Feng Kuo ,  Ching-I Li ,  Cheng-Tzung Tsai

Inventor： Chen-Hua Tsai ,  Po-Jui Liao ,  Tzu-Feng Kuo ,  Ching-I Li ,  Cheng-Tzung Tsai

IPC: H01L21/336

CPC classification number: H01L21/26586 ,  H01L21/26506 ,  H01L21/268 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/66628 ,  H01L29/7834

Abstract: A SiC region and a source/drain region are formed such that the SiC region includes a first portion overlapping the source/drain region and a second portion protruding from the source/drain region to a position beneath the LDD region. The concentration of crystalline SiC in the second portion is higher than the concentration of crystalline SiC in the first portion. The SiC region may be formed through a normal implantation before the second spacer is formed, or the SiC region may be formed through a tilt implantation or deposition epitaxially in a recess having a sigma-shape like sidewall after the second spacer is formed.

Abstract translation: 形成SiC区域和源极/漏极区域，使得SiC区域包括与源极/漏极区域重叠的第一部分和从源极/漏极区域突出到LDD区域下方的位置的第二部分。 第二部分中结晶SiC的浓度高于第一部分中结晶SiC的浓度。 可以在形成第二间隔物之前通过正常注入形成SiC区域，或者可以在形成第二间隔物之后，通过在具有像σ形状的侧壁的凹槽中外延地倾斜注入或沉积来形成SiC区域。

公开(公告)号：US08575043B2

公开(公告)日：2013-11-05

申请号：US13191430

申请日：2011-07-26

Applicant: Chan-Lon Yang ,  Tzu-Feng Kuo ,  Hsin-Huei Wu ,  Ching-I Li ,  Shu-Yen Chan

Inventor： Chan-Lon Yang ,  Tzu-Feng Kuo ,  Hsin-Huei Wu ,  Ching-I Li ,  Shu-Yen Chan

IPC: H01L21/00 ,  B23K26/02 ,  B23K26/08

CPC classification number: H01L21/268 ,  H01L21/26586

Abstract: A semiconductor device includes a plurality of active areas disposed on a semiconductor substrate. A manufacturing method of the semiconductor device includes performing a first annealing process on the semiconductor substrate by emitting a first laser alone a first scanning direction, and performing a second annealing process on the semiconductor substrate by emitting a second laser alone a second scanning direction. The first scanning direction and the second scanning direction have an included angle.

Abstract translation: 半导体器件包括设置在半导体衬底上的多个有源区。 半导体器件的制造方法包括：通过在第一扫描方向上单独地发射第一激光，对半导体衬底进行第一退火处理，并且通过在第二扫描方向上单独地发射第二激光，对半导体衬底进行第二退火处理。 第一扫描方向和第二扫描方向具有夹角。

公开(公告)号：US20130026543A1

公开(公告)日：2013-01-31

申请号：US13191430

申请日：2011-07-26

Applicant: Chan-Lon Yang ,  Tzu-Feng Kuo ,  Hsin-Huei Wu ,  Ching-I Li ,  Shu-Yen Chan

Inventor： Chan-Lon Yang ,  Tzu-Feng Kuo ,  Hsin-Huei Wu ,  Ching-I Li ,  Shu-Yen Chan

IPC: H01L21/268 ,  H01L29/772

CPC classification number: H01L21/268 ,  H01L21/26586

Abstract: A semiconductor device includes a plurality of active areas disposed on a semiconductor substrate. A manufacturing method of the semiconductor device includes performing a first annealing process on the semiconductor substrate by emitting a first laser alone a first scanning direction, and performing a second annealing process on the semiconductor substrate by emitting a second laser alone a second scanning direction. The first scanning direction and the second scanning direction have an incident angle.

Abstract translation: 半导体器件包括设置在半导体衬底上的多个有源区。 半导体器件的制造方法包括：通过在第一扫描方向上单独地发射第一激光，对半导体衬底进行第一退火处理，并且通过在第二扫描方向上单独地发射第二激光，对半导体衬底进行第二退火处理。 第一扫描方向和第二扫描方向具有入射角。

公开(公告)号：US20100255666A1

公开(公告)日：2010-10-07

申请号：US12819337

申请日：2010-06-21

Applicant: Chan-Lon YANG ,  Ching-I Li ,  Tzu-Feng Kuo ,  Yin-Ru Shi

Inventor： Chan-Lon YANG ,  Ching-I Li ,  Tzu-Feng Kuo ,  Yin-Ru Shi

IPC: H01L21/265

CPC classification number: H01L21/76897 ,  H01L21/76801 ,  H01L21/76804 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thermal processing method is provided. First, a semiconductor substrate is provided. The semiconductor substrate has a metal-oxide-semiconductor transistor formed thereon. The metal-oxide-semiconductor transistor includes a gate and source and drain regions on two sides of the gate. Dopants are implanted into the source and drain region and the gate. Next, a cap layer is formed over the semiconductor substrate. Next, a first thermal process is performed, and then a second thermal process is performed. Next, the cap layer is removed. The thermal processing method is capable of uniformly heating a semiconductor substrate and reducing the pattern effect in the fabrication of a CMOS and to improve the performance of the CMOS.

Abstract translation: 提供了一种热处理方法。 首先，提供半导体基板。 半导体衬底具有形成在其上的金属氧化物半导体晶体管。 金属氧化物半导体晶体管包括在栅极两侧的栅极和源极和漏极区域。 掺杂剂注入到源极和漏极区域和栅极中。 接下来，在半导体衬底上形成覆盖层。 接下来，执行第一热处理，然后执行第二热处理。 接下来，去除盖层。 热处理方法能够均匀地加热半导体衬底并降低CMOS的制造中的图案效应并提高CMOS的性能。