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    Crystal growth apparatus and method of producing a crystal
    11.
    发明授权
    Crystal growth apparatus and method of producing a crystal 有权
    晶体生长装置及其制造方法

    公开(公告)号：US07462238B2

    公开(公告)日：2008-12-09

    申请号：US11498841

    申请日：2006-08-04

    Applicant: Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    Inventor： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    IPC: C30B25/14

    CPC classification number: C30B29/40 ,  C30B7/00 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

    Abstract: A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.

    Abstract translation: 晶体生长装置包括在其容器空间中容纳含有碱金属和III族金属的熔融混合物的反应容器，通过其表面张力将金属熔体保持在通过其中的碱金属的蒸汽的路径中的多孔构件 与容器空间中的金属混合物接触逃逸到外部空间，多孔构件进一步向外部供给来自反应容器的氮源气体，并通过金属熔体通过在容器空间之间形成的压力差 反应容器和外部空间，以及将熔融混合物加热至晶体生长温度的加热装置。

    SENSOR MODULE, METHOD OF CORRECTION THEREFOR, AND MOBILE OBJECT INCLUDING THE SENSOR MODULE
    12.
    发明申请
    SENSOR MODULE, METHOD OF CORRECTION THEREFOR, AND MOBILE OBJECT INCLUDING THE SENSOR MODULE 有权
    传感器模块，其校正方法和包含传感器模块的移动对象

    公开(公告)号：US20080250661A1

    公开(公告)日：2008-10-16

    申请号：US11868141

    申请日：2007-10-05

    Applicant: Futoyoshi KOU ,  Akihiro Fuse

    Inventor： Futoyoshi KOU ,  Akihiro Fuse

    IPC: G01C17/38

    CPC classification number: G01C17/28 ,  G01C17/38 ,  G01P15/0922 ,  G01P15/18 ,  G01P2015/084

    Abstract: A sensor module maintaining high detection accuracy. Correction data of a detected magnetic field is updated only in a case that a fluctuation band acquired from an output signal of an acceleration sensor is less than a threshold value and a difference between an azimuth angle acquired from an output signal of a terrestrial magnetism sensor and an inclination angle acquired from an output signal of acceleration sensor is less than the threshold value. Therefore, the correction data is updated only in a case that a magnetic field at a position of a mobile object is stably detected, and an accuracy of the correction data can be maintained.

    Abstract translation: 传感器模块保持高检测精度。 检测磁场的校正数据仅在从加速度传感器的输出信号获取的波动频带小于阈值的情况下和从地磁传感器的输出信号获取的方位角和 从加速度传感器的输出信号获取的倾斜角度小于阈值。 因此，仅在稳定地检测移动体的位置的磁场的情况下才更新校正数据，能够维持校正数据的精度。

    Crystal growth apparatus and method of producing a crystal
    13.
    发明申请
    Crystal growth apparatus and method of producing a crystal 有权
    晶体生长装置及其制造方法

    公开(公告)号：US20070034143A1

    公开(公告)日：2007-02-15

    申请号：US11498841

    申请日：2006-08-04

    Applicant: Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    Inventor： Seiji Sarayama ,  Hirokazu Iwata ,  Akihiro Fuse ,  Kuniaki Ara ,  Junichi Saito

    IPC: C30B7/00 ,  C30B21/02 ,  C30B23/00 ,  C30B28/14 ,  C30B25/00 ,  C30B28/06 ,  C30B28/12

    CPC classification number: C30B29/40 ,  C30B7/00 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

    Abstract: A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.

    Abstract translation: 晶体生长装置包括在其容器空间中容纳含有碱金属和III族金属的熔融混合物的反应容器，通过其表面张力将金属熔体保持在通过其中的碱金属的蒸汽的路径中的多孔构件 与容器空间中的金属混合物接触逃逸到外部空间，多孔构件进一步向外部供给来自反应容器的氮源气体，并通过金属熔体通过在容器空间之间形成的压力差 反应容器和外部空间，以及将熔融混合物加热至晶体生长温度的加热装置。

    Group III nitride crystal and manufacturing method thereof
    15.
    发明授权
    Group III nitride crystal and manufacturing method thereof 有权
    III族氮化物晶体及其制造方法

    公开(公告)号：US08323404B2

    公开(公告)日：2012-12-04

    申请号：US11561662

    申请日：2006-11-20

    Applicant: Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    Inventor： Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    IPC: C30B7/14

    CPC classification number: C30B9/00 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02647

    Abstract: A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

    Abstract translation: 含有碱金属元素的III族氮化物晶体包括基体，形成为使其至少一部分与基体接触的第一III族氮化物晶体，第一III族氮化物晶体沿着方向偏转穿透位错 不同于从基体的晶体生长方向和与第一III族氮化物晶体相邻形成的第二氮化物晶体，第二氮化物晶体具有大致垂直于晶体生长方向的晶体生长表面。

    Magnetic sensor including magnetic field detectors and field resistors arranged on inclined surfaces
    16.
    发明授权
    Magnetic sensor including magnetic field detectors and field resistors arranged on inclined surfaces 有权
    磁传感器包括磁场检测器和位于斜面上的场电阻

    公开(公告)号：US08134361B2

    公开(公告)日：2012-03-13

    申请号：US12137902

    申请日：2008-06-12

    Applicant: Junichi Azumi ,  Futoyoshi Kou ,  Akihiro Fuse

    Inventor： Junichi Azumi ,  Futoyoshi Kou ,  Akihiro Fuse

    IPC: G01R33/09

    CPC classification number: G01R33/093 ,  B82Y25/00 ,  Y10T29/49002

    Abstract: A magnetic sensor including sensor bridge circuits, each including a pair of magnetic field detectors and a pair of fixed resistors. The magnetic field detectors in each bridge circuit are located on the same inclined surface, while the fixed resistors are each located on a different inclined surface. The inclined surface configuration reduces the number of fabrication steps necessary to fabricate the magnetic sensor.

    Abstract translation: 一种磁传感器，包括传感器桥接电路，每个磁传感器包括一对磁场检测器和一对固定电阻器。 每个桥接电路中的磁场检测器位于相同的倾斜表面上，而固定电阻器各自位于不同的倾斜表面上。 倾斜表面结构减少制造磁传感器所需的制造步骤数量。

    GROUP III NITRIDE CRYSTAL AND MANUFACTURING METHOD THEREOF
    18.
    发明申请
    GROUP III NITRIDE CRYSTAL AND MANUFACTURING METHOD THEREOF 有权
    第III组氮化物晶体及其制造方法

    公开(公告)号：US20070128746A1

    公开(公告)日：2007-06-07

    申请号：US11561662

    申请日：2006-11-20

    Applicant: Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    Inventor： Hirokazu Iwata ,  Seiji Sarayama ,  Akihiro Fuse

    IPC: H01L21/00 ,  H01L29/22

    CPC classification number: C30B9/00 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02647

    Abstract: A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

    Abstract translation: 含有碱金属元素的III族氮化物晶体包括基体，形成为使其至少一部分与基体接触的第一III族氮化物晶体，第一III族氮化物晶体沿着方向偏转穿透位错 不同于从基体的晶体生长方向和与第一III族氮化物晶体相邻形成的第二氮化物晶体，第二氮化物晶体具有大致垂直于晶体生长方向的晶体生长表面。

    Fabrication process of a semiconductor device having a multilayered interconnection structure
    20.
    发明授权
    Fabrication process of a semiconductor device having a multilayered interconnection structure 失效
    具有多层互连结构的半导体器件的制造工艺

    公开(公告)号：US5933756A

    公开(公告)日：1999-08-03

    申请号：US730505

    申请日：1996-10-11

    Applicant: Akihiro Fuse

    Inventor： Akihiro Fuse

    IPC: H01L21/768 ,  H01L21/441

    CPC classification number: H01L21/76877 ,  H01L21/76804

    Abstract: A method of forming a multilayer interconnection structure includes the steps of forming a contact hole in an interlayer insulation film, depositing the contact hole by a conductive plug of a refractory element, applying a sputter-etching process to the interlayer insulation film to form a tapered part at a top part of the contact hole while using the conductive plug as an etching stopper, and filling the tapered part of the contact hole by a conductor material by a sputtering process.

    Abstract translation: 形成多层互连结构的方法包括以下步骤：在层间绝缘膜中形成接触孔，通过难熔元件的导电插塞沉积接触孔，对层间绝缘膜施加溅射蚀刻工艺以形成锥形 在使用导电插塞作为蚀刻停止器的同时在接触孔的顶部的一部分，并且通过溅射工艺用导体材料填充接触孔的锥形部分。

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