公开(公告)号：US07394202B2

公开(公告)日：2008-07-01

申请号：US11647801

申请日：2006-12-29

Applicant: Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

Inventor： Thomas N. Horsky ,  Brian C. Cohen ,  Wade A. Krull ,  George P. Sacco, Jr.

IPC: H01J7/24

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

Abstract: An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm−3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target surface and the ions of the transported ion beam are implanted into the target.

Abstract translation: 公开了一种离子注入，其包括具有限制的出口孔的电离室，并且被构造成使得离子化室中的气体或蒸汽的压力显着高于离子被提取外部的提取区域内的压力 电离室。 蒸汽通过电子源直接电离而电离，该电子源位于邻近离子化室的出口孔的区域，以产生从气体或蒸汽的分子到至少10×10 6的密度的离子， SUP> cm -3，同时保持将离子的横向动能限制在小于约0.7eV的条件。 将光束输送到目标表面，并将输送的离子束的离子注入靶中。

公开(公告)号：US20080105828A1

公开(公告)日：2008-05-08

申请号：US11733973

申请日：2007-04-11

Applicant: Christopher R. HATEM ,  Jay Thomas SCHEUER ,  Russell J. LOW ,  Morgan D. Evans ,  Jonathan Gerald ENGLAND

Inventor： Christopher R. HATEM ,  Jay Thomas SCHEUER ,  Russell J. LOW ,  Morgan D. Evans ,  Jonathan Gerald ENGLAND

IPC: H01J49/02 ,  H01J27/02

CPC classification number: C23C14/48 ,  C01B3/0026 ,  C01B3/0031 ,  C01B3/0036 ,  C01B3/0047 ,  C01B3/0068 ,  C23C14/564 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/31705 ,  Y02E60/327

Abstract: Techniques for removing molecular fragments from an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for removing molecular fragments from an ion implanter. The apparatus may comprise a supply mechanism configured to couple to an ion source chamber and to supply a feed material to the ion source chamber. The apparatus may also comprise one or more hydrogen-absorbing materials placed in a flow path of the feed material, to prevent at least one portion of hydrogen-containing molecular fragments in the feed material from entering the ion source chamber.

Abstract translation: 公开了从离子注入机去除分子碎片的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于从离子注入机去除分子碎片的装置。 该装置可以包括配置成耦合到离子源室并且将进料材料供应到离子源室的供给机构。 该装置还可以包括放置在进料材料的流动路径中的一种或多种吸氢材料，以防止进料中至少一部分含氢分子碎片进入离子源室。

公开(公告)号：US07365340B2

公开(公告)日：2008-04-29

申请号：US11185141

申请日：2005-07-20

Applicant: Kenneth H. Purser ,  Albert E. Litherland ,  Norman L. Turner

Inventor： Kenneth H. Purser ,  Albert E. Litherland ,  Norman L. Turner

IPC: H01J7/24

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J49/145 ,  H01J2237/0815 ,  H01J2237/31705 ,  H05H3/02

Abstract: The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields. An example having commercial importance is ionization of the decaborane molecule, B10H14 where an almost perfect ionization resonance match occurs between decaborane molecules and arsenic atoms.

Abstract translation: 本发明包括一种紧凑且经济的装置，用于产生以前不可能以有用强度预先产生的各种各样的所需正，负分子和原子离子束的强度。 此外，本发明提供了与所需离子频繁同时发射的伴随背景离子的显着排除。 本发明的基本原理是谐振电离转移，其中利用共振和非共振过程之间的能量差异来增强或减弱特定的电荷变化过程。 这种新的源技术与加速器质谱技术相关; 分子离子注入 定向中性梁的生成 和磁场中离子束中和所需的电子的生产。 具有商业重要性的实例是十硼烷分子的电离，其中在十硼烷分子和砷原子之间发生几乎完美的电离谐振匹配的B 10 H 14 N 14。

公开(公告)号：US20080054193A1

公开(公告)日：2008-03-06

申请号：US11822738

申请日：2007-07-09

Applicant: Richard Goldberg

Inventor： Richard Goldberg

IPC: H01J37/30

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/0475 ,  H01J2237/18 ,  H01J2237/31705

Abstract: The present invention relates to a guide tube for an ion beam in an ion implanter located adjacent a semiconductor wafer. Such guide tubes are provided to confine charged particles used for wafer neutralisation during implantation. According to the invention, a guide tube comprises an axis, open ends to receive an ion beam along said axis, a tube wall substantially parallel with said axis, and at least one opening through the tube wall forming a gas conduction passage from inside to outside the guide tube, said passage having a length aligned at an acute angle to said guide tube axis and a minimum dimension transverse to said length such that a line of sight through the passage perpendicular to said guide tube axis is substantially occluded.

Abstract translation: 本发明涉及位于邻近半导体晶片的离子注入机中用于离子束的导向管。 提供这样的引导管以限制在植入期间用于晶片中和的带电粒子。 根据本发明，导管包括轴线，开口端以沿着所述轴线接纳离子束，基本上平行于所述轴线的管壁，以及通过管壁的至少一个开口，其形成从内向外的气体传导通道 引导管，所述通道具有与所述引导管轴线成锐角对准的长度和与所述长度相交的最小尺寸，使得通过垂直于所述引导管轴线的通道的视线基本上被遮挡。

公开(公告)号：US20070221871A1

公开(公告)日：2007-09-27

申请号：US11386596

申请日：2006-03-22

Applicant: Raymond Callahan ,  David Olson ,  Wilhelm P. Platow ,  Stanislav S. Todorov

Inventor： Raymond Callahan ,  David Olson ,  Wilhelm P. Platow ,  Stanislav S. Todorov

IPC: G01N23/00 ,  G21K5/10

CPC classification number: H01J37/3171 ,  H01J2237/1501 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/2487 ,  H01J2237/30472 ,  H01J2237/30477 ,  H01J2237/31705

Abstract: A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.

Abstract translation: 公开了一种使用折射方法确定离子束的平行度的系统，方法和程序产品。 一个实施例包括确定离子束的第一测试位置，同时不将离子束暴露于加速/减速电场，确定离子束的第二测试位置，同时将离子束暴露于加速/减速电场，以及确定 基于第一测试位置和第二测试位置的离子束的平行度。 当光束不平行时，加速/减速电场用于折射两个位置之间的离子束，从而放大任何非平行度。 折射量或横向偏移可用于确定离子束的非平行度。 还公开了一种离子注入机系统和基于并行度测定的离子注入机系统的调整。

公开(公告)号：US20070102652A1

公开(公告)日：2007-05-10

申请号：US11272529

申请日：2005-11-10

Applicant: Philip Ring ,  Michael Graf

Inventor： Philip Ring ,  Michael Graf

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/028 ,  H01J2237/31705

Abstract: An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. A liner has an interior facing surface that bounds at least a portion of the evacuated interior region and that comprises grooves spaced across the surface of the liner to capture contaminants generated within the interior region during operation of the ion implanter.

Abstract translation: 离子注入机包括用于产生沿着束线移动的离子束的离子源和真空或注入室，其中诸如硅晶片的工件被定位成与离子束相交以便通过所述工件的表面离子注入 离子束。 衬里具有内表面，其限定了所抽真空的内部区域的至少一部分，并且包括在衬垫的表面上间隔的凹槽，以在离子注入机的操作期间捕获在内部区域内产生的污染物。

公开(公告)号：US20070075274A1

公开(公告)日：2007-04-05

申请号：US11273039

申请日：2005-11-14

Applicant: Ronald Reece ,  Serguei Kondratenko ,  Geumjoo Ra ,  Louis Wainwright ,  Gary Cai

Inventor： Ronald Reece ,  Serguei Kondratenko ,  Geumjoo Ra ,  Louis Wainwright ,  Gary Cai

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/31705 ,  H01L21/26513

Abstract: A contamination mitigation or surface modification system for ion implantation processes includes a gas source, a controller, a valve, and a process chamber. The gas source provides delivery of a gas, be it atmospheric or reactive, to the valve and is controlled by the controller. The valve is located on or about the process chamber and controllably adjusts flow rate and/or composition of the gas to the process chamber. The process chamber holds a target device, such as a target wafer and permits interaction of the gas with an ion beam to mitigate contamination of the target wafer and/or to modify the existing properties of the processing environment or target device to change a physical or chemical state or characteristic thereof. The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well total or partial pressure analysis.

Abstract translation: 用于离子注入工艺的污染减轻或表面改性系统包括气源，控制器，阀和处理室。 气体源提供气体（无论是大气还是反应性）到阀门的输送，并由控制器控制。 阀位于处理室上或周围，并且可控地调节气体和/或气体组成到处理室。 处理室保持诸如目标晶片的目标装置，并且允许气体与离子束的相互作用以减轻目标晶片的污染和/或修改处理环境或目标装置的现有属性以改变物理或 化学状态或其特性。 控制器根据存在于离子束内的污染物或其缺乏以及全部或分压分析来选择和调整气体和流速的组成。

公开(公告)号：US07107929B2

公开(公告)日：2006-09-19

申请号：US10170512

申请日：2002-06-12

Applicant: Thomas Neil Horsky ,  John Noel Williams

Inventor： Thomas Neil Horsky ,  John Noel Williams

IPC: A01C7/00 ,  H01J7/24

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: An ion source for an ion implantation system includes a vaporizer for producing a process gas; an electron source for generating an electron beam to ionize the process gas within a ionization chamber. The ionization chamber includes an extraction aperture for extracting an ion beam. The ion source, in accordance with the preset invention, is configured to be able to be retrofit into the design space of existing ion sources in, for example, Bernas source-based ion implanters.

Abstract translation: 用于离子注入系统的离子源包括用于产生处理气体的蒸发器; 用于产生电离束以电离离子化室内的工艺气体的电子源。 电离室包括用于提取离子束的提取孔。 根据本发明的离子源被配置为能够改造为例如基于伯纳斯源的离子注入器中的现有离子源的设计空间。

公开(公告)号：US20060131514A1

公开(公告)日：2006-06-22

申请号：US11022060

申请日：2004-12-22

Applicant: Maria Anc ,  Dale Stone ,  Christopher Reddy

Inventor： Maria Anc ,  Dale Stone ,  Christopher Reddy

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/165 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

Abstract: An ion implanter having a source, a workpiece support and a transport system for delivering ions from the source to an ion implantation chamber that contains the workpiece support. The implanter includes one or more removable inserts mounted to an interior of either the transport system or the ion implantation chamber for collecting material entering either the transport system or the ion implantation chamber due to collisions between ions and the workpiece within the ion implantation chamber during ion processing of the workpiece. A temperature control coupled to the one or more removable inserts for maintaining the temperature of the insert at a controlled temperature to promote formation of a film on said insert during ion treatment due to collisions between ions and said workpiece.

Abstract translation: 一种离子注入机，其具有源，工件支撑和用于将离子从源输送到包含工件支撑件的离子注入室的输送系统。 注入机包括一个或多个可拆卸的插入件，其安装到输送系统或离子注入室的内部，用于收集进入输送系统或离子注入室的材料，这是由于离子和离子注入室内的工件之间的离子在离子 加工工件。 耦合到一个或多个可移除插入件的温度控制器，用于将插入件的温度保持在受控温度，以促进在离子处理期间由于离子和所述工件之间的碰撞而在所述插入件上形成膜。

公开(公告)号：US07009193B2

公开(公告)日：2006-03-07

申请号：US10697644

申请日：2003-10-31

Applicant: Frederico Garza ,  Michael Wright ,  Karl Peterson

Inventor： Frederico Garza ,  Michael Wright ,  Karl Peterson

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J2237/004 ,  H01J2237/18 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: A device to implant impurities into a semiconductor wafer has a process chamber having a wall, a pressure compensation unit, a disk to support a plurality of semiconductor wafers within the process chamber. The disk has a radially extending slot arranged among the wafers. A beam gun is positioned within the process chamber to shoot an ion beam at the semiconductor wafers. A cryo pump minimizes the pressure within the process chamber. A first ion gauge is positioned between the process chamber and the cryo pump. A second ion gauge extends through the wall of the process chamber. A switching device selectively connects the first or second ion gauge to the pressure compensation unit. A faraday receives ions from the ion gun filter after the ions travel through the slot in the disk. A current meter counts the number of electrons flowing to the disk faraday to neutralize the ions.

Abstract translation: 将杂质植入半导体晶片的装置具有处理室，该处理室具有壁，压力补偿单元，用于支撑处理室内的多个半导体晶片的盘。 盘具有布置在晶片之间的径向延伸槽。 射束枪位于处理室内以在半导体晶片处射出离子束。 冷冻泵使处理室内的压力最小化。 第一个离子计位于处理室和低温泵之间。 第二离子计延伸穿过处理室的壁。 开关装置选择性地将第一或第二离子计连接到压力补偿单元。 在离子穿过盘中的槽之后，法拉第接收离子枪过滤器的离子。 电流表计数流到盘法拉第的电子数以中和离子。