公开(公告)号：US07001856B2

公开(公告)日：2006-02-21

申请号：US10697639

申请日：2003-10-31

Applicant: Frederico Garza ,  Karl Peterson ,  Michael Wright

Inventor： Frederico Garza ,  Karl Peterson ,  Michael Wright

IPC: H01L21/00

CPC classification number: H01J37/3171 ,  H01J37/304

Abstract: A process uses pressure changes and a pressure compensation factor to estimate the rate at which neutral atoms are implanted. While implanting a first wafer using a first pressure compensation factor, the rate at which ions are implanted is determined. The first wafer is moved radially with respect to an ion beam while implanting ions into the first wafer so as to achieve a uniform total dose based on the rate at which ions are implanted and the estimated rate at which neutral atoms are implanted. The pressure is determined while implanting the first wafer, determining the pressure. A second pressure compensation factor is selected, that would have achieved a uniform rate of implanted ions plus implanted neutral atoms across a surface of the first wafer. The second pressure compensation factor is different from the first pressure compensation factor. The second pressure compensation factor is used to implant a second wafer. The second wafer is tested by forming a sheet resistance contour map. If the sheet resistant contour map shows uniform resistance across the wafer, the second pressure compensation factor is used to implant wafers subsequent to the second wafer.

Abstract translation: 一个过程使用压力变化和压力补偿因子来估计中性原子被植入的速率。 在使用第一压力补偿因子植入第一晶片时，确定注入离子的速率。 第一晶片相对于离子束径向移动，同时将离子注入到第一晶片中，以便基于离子注入的速率和中性原子注入的估计速率来实现均匀的总剂量。 在注入第一晶片时确定压力，确定压力。 选择第二压力补偿因子，其将实现在第一晶片的表面上的注入离子加入植入的中性原子的均匀速率。 第二压力补偿系数与第一压力补偿系数不同。 第二压力补偿因子用于植入第二晶片。 通过形成薄层电阻轮廓图来测试第二个晶片。 如果抗张力轮廓图在晶片上显示出均匀的电阻，则第二压力补偿因子用于在第二晶片之后植入晶片。

公开(公告)号：US20050092595A1

公开(公告)日：2005-05-05

申请号：US10697656

申请日：2003-10-31

Applicant: Karl Peterson ,  Michael Wright ,  Frederico Garza

Inventor： Karl Peterson ,  Michael Wright ,  Frederico Garza

IPC: H01J37/34 ,  C23C14/00 ,  G01N27/26

CPC classification number: H01J37/3402

Abstract: A device to implant impurities into a semiconductor wafer had a beam gun to shoot ions at a semiconductor wafer, a pair of ion gauges, and ion gauge controller to supply power to, and obtain information corresponding to a number of ions from, one of the ion gauges. The gauge controller has a parameter output, a control output and a pair of control inputs respectively associated with the pair of ion gauges, such that when a control signal is supplied to one of the control inputs, the ion gauge controller supplies power to, and obtains information corresponding to a number of ions from, the respectively associated ion gauge. The control output produces the control signal when either of the ion gauges is activated. The parameter output selectively produces a parameter signal based on a recipe selection. A first delay circuit connects the control output to one of the control inputs, after a delay, when the parameter output is on. A second delay circuit connects the control outputs to the other of the control inputs, after a delay, when the parameter output is off.

Abstract translation: 将杂质植入到半导体晶片中的装置具有射束枪，以在半导体晶片上射出离子，一对离子计和离子计控制器，以向其提供功率，并获得与多个离子相关的信息 离子量规。 仪表控制器具有参数输出，控制输出和一对控制输入，分别与一对离子计相关联，使得当控制信号被提供给控制输入之一时，离子计控制器向 从相应的离子计获得与离子数相对应的信息。 当任一离子计激活时，控制输出产生控制信号。 参数输出根据配方选择选择性地产生参数信号。 当参数输出打开时，第一个延迟电路在延迟之后将控制输出连接到其中一个控制输入。 当参数输出关闭时，第二个延迟电路在延迟之后将控制输出连接到另一个控制输入。

公开(公告)号：US20050092938A1

公开(公告)日：2005-05-05

申请号：US10697644

申请日：2003-10-31

Applicant: Frederico Garza ,  Michael Wright ,  Karl Peterson

Inventor： Frederico Garza ,  Michael Wright ,  Karl Peterson

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/004 ,  H01J2237/18 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: A device to implant impurities into a semiconductor wafer has a process chamber having a wall, a pressure compensation unit, a disk to support a plurality of semiconductor wafers within the process chamber. The disk has a radially extending slot arranged among the wafers. A beam gun is positioned within the process chamber to shoot an ion beam at the semiconductor wafers. A cryo pump minimizes the pressure within the process chamber. A first ion gauge is positioned between the process chamber and the cryo pump. A second ion gauge extends through the wall of the process chamber. A switching device selectively connects the first or second ion gauge to the pressure compensation unit. A faraday receives ions from the ion gun filter after the ions travel through the slot in the disk. A current meter counts the number of electrons flowing to the disk faraday to neutralize the ions.

Abstract translation: 将杂质植入半导体晶片的装置具有处理室，该处理室具有壁，压力补偿单元，用于支撑处理室内的多个半导体晶片的盘。 盘具有布置在晶片之间的径向延伸槽。 射束枪位于处理室内以在半导体晶片处射出离子束。 冷冻泵使处理室内的压力最小化。 第一个离子计位于处理室和低温泵之间。 第二离子计延伸穿过处理室的壁。 开关装置选择性地将第一或第二离子计连接到压力补偿单元。 在离子穿过盘中的槽之后，法拉第接收离子枪过滤器的离子。 电流表计数流到盘法拉第的电子数以中和离子。

公开(公告)号：US07009193B2

公开(公告)日：2006-03-07

申请号：US10697644

申请日：2003-10-31

Applicant: Frederico Garza ,  Michael Wright ,  Karl Peterson

Inventor： Frederico Garza ,  Michael Wright ,  Karl Peterson

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J2237/004 ,  H01J2237/18 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: A device to implant impurities into a semiconductor wafer has a process chamber having a wall, a pressure compensation unit, a disk to support a plurality of semiconductor wafers within the process chamber. The disk has a radially extending slot arranged among the wafers. A beam gun is positioned within the process chamber to shoot an ion beam at the semiconductor wafers. A cryo pump minimizes the pressure within the process chamber. A first ion gauge is positioned between the process chamber and the cryo pump. A second ion gauge extends through the wall of the process chamber. A switching device selectively connects the first or second ion gauge to the pressure compensation unit. A faraday receives ions from the ion gun filter after the ions travel through the slot in the disk. A current meter counts the number of electrons flowing to the disk faraday to neutralize the ions.

Abstract translation: 将杂质植入半导体晶片的装置具有处理室，该处理室具有壁，压力补偿单元，用于支撑处理室内的多个半导体晶片的盘。 盘具有布置在晶片之间的径向延伸槽。 射束枪位于处理室内以在半导体晶片处射出离子束。 冷冻泵使处理室内的压力最小化。 第一个离子计位于处理室和低温泵之间。 第二离子计延伸穿过处理室的壁。 开关装置选择性地将第一或第二离子计连接到压力补偿单元。 在离子穿过盘中的槽之后，法拉第接收离子枪过滤器的离子。 电流表计数流到盘法拉第的电子数以中和离子。

公开(公告)号：US20050095800A1

公开(公告)日：2005-05-05

申请号：US10697639

申请日：2003-10-31

Applicant: Frederico Garza ,  Karl Peterson ,  Michael Wright

Inventor： Frederico Garza ,  Karl Peterson ,  Michael Wright

IPC: H01J37/304 ,  H01J37/317 ,  H01L21/336

CPC classification number: H01J37/3171 ,  H01J37/304

Abstract: A process uses pressure changes and a pressure compensation factor to estimate the rate at which neutral atoms are implanted. While implanting a first wafer using a first pressure compensation factor, the rate at which ions are implanted is determined. The first wafer is moved radially with respect to an ion beam while implanting ions into the first wafer so as to achieve a uniform total dose based on the rate at which ions are implanted and the estimated rate at which neutral atoms are implanted. The pressure is determined while implanting the first wafer, determining the pressure. A second pressure compensation factor is selected, that would have achieved a uniform rate of implanted ions plus implanted neutral atoms across a surface of the first wafer. The second pressure compensation factor is different from the first pressure compensation factor. The second pressure compensation factor is used to implant a second wafer. The second wafer is tested by forming a sheet resistance contour map. If the sheet resistant contour map shows uniform resistance across the wafer, the second pressure compensation factor is used to implant wafers subsequent to the second wafer.

Abstract translation: 一个过程使用压力变化和压力补偿因子来估计中性原子被植入的速率。 在使用第一压力补偿因子植入第一晶片时，确定注入离子的速率。 第一晶片相对于离子束径向移动，同时将离子注入到第一晶片中，以便基于离子注入的速率和中性原子注入的估计速率来实现均匀的总剂量。 在注入第一晶片时确定压力，确定压力。 选择第二压力补偿因子，其将实现在第一晶片的表面上的注入离子加入植入的中性原子的均匀速率。 第二压力补偿系数与第一压力补偿系数不同。 第二压力补偿因子用于植入第二晶片。 通过形成薄层电阻轮廓图来测试第二个晶片。 如果抗张力轮廓图在晶片上显示出均匀的电阻，则第二压力补偿因子用于在第二晶片之后植入晶片。