公开(公告)号：US20210398772A1

公开(公告)日：2021-12-23

申请号：US17348031

申请日：2021-06-15

Applicant: Axcelis Technologies, Inc.

Inventor： Shu Satoh ,  Wilhelm Platow

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/09 ,  H01J37/141 ,  H01J37/153 ,  H01J37/21

Abstract: An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.

公开(公告)号：US20210398765A1

公开(公告)日：2021-12-23

申请号：US17330801

申请日：2021-05-26

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom ,  Shu Satoh ,  Paul Silverstein ,  Marvin Farley

IPC: H01J1/02 ,  H01J1/52

Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.

公开(公告)号：US20210249222A1

公开(公告)日：2021-08-12

申请号：US17168897

申请日：2021-02-05

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Shu Satoh ,  Genise Bonacorsi ,  William Bintz

IPC: H01J37/317 ,  H01J37/08

Abstract: A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

公开(公告)号：US20210013061A1

公开(公告)日：2021-01-14

申请号：US16509915

申请日：2019-07-12

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett

IPC: H01L21/67 ,  H01J37/317

Abstract: A workpiece processing system has a cooling chamber enclosing a chamber volume. A workpiece support within the cooling chamber supports a workpiece having a material with an outgassing temperature, above which, the material outgases an outgas material at an outgassing rate that is toxic to personnel. A cooling apparatus selectively cools the workpiece to a predetermined temperature. A vacuum source and purge gas source selectively evacuates and selectively provides a purge gas to the chamber volume. A controller controls the cooling apparatus to cool the workpiece to the predetermined temperature, where the one or more materials are cooled below the outgassing temperature. The vacuum source and purge gas source are controlled to provide a predetermined heat transfer rate while removing the respective outgas material from the chamber volume.

公开(公告)号：US10832926B2

公开(公告)日：2020-11-10

申请号：US15391086

申请日：2016-12-27

Applicant: Axcelis Technologies, Inc.

Inventor： Joseph Ferrara ,  Robert J. Mitchell

IPC: H01L21/67 ,  H01L21/677 ,  C23C14/48

Abstract: An ion implantation apparatus, system, and method are provided for transferring a plurality of workpieces between vacuum and atmospheric pressures, wherein an alignment mechanism is operable to align a plurality of workpieces for generally simultaneous transportation to a dual-workpiece load lock chamber. The alignment mechanism comprises a characterization device, an elevator, and two vertically-aligned workpiece supports for supporting two workpieces. First and second atmospheric robots are configured to generally simultaneously transfer two workpieces at a time between load lock modules, the alignment mechanism, and a FOUP. Third and fourth vacuum robots are configured to transfer one workpiece at a time between the load lock modules and a process module.

公开(公告)号：US20200335302A1

公开(公告)日：2020-10-22

申请号：US16850066

申请日：2020-04-16

Applicant: Axcelis Technologies, Inc.

Inventor： Joshua Max Abeshaus ,  Neil Bassom ,  Camilla Lambert ,  Caleb Wisch ,  Kyle Hinds ,  Caleb Bell

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/32

Abstract: An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to a carrousel that translates or rotates the respective one of the plurality of arc chambers to a beamline position associated with the beamline. One or more of the plurality of arc chambers can have at least one unique feature, or two or more of the plurality of arc chambers can be generally identical to one another.

公开(公告)号：US10794694B2

公开(公告)日：2020-10-06

申请号：US16170085

申请日：2018-10-25

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett ,  Billy Thomas Benoit ,  Joe Ferrara ,  Brian Terry

IPC: G01N21/00 ,  G01B11/27 ,  H01L21/24 ,  H01L21/68 ,  H01L21/67

Abstract: A workpiece alignment system is provided has a light emission apparatus that directs a light beam at a plurality of wavelengths along a path at a shallow angle toward a first side of a workpiece plane at a peripheral region. A light receiver apparatus, receives the light beam on a second side opposite the first side. A rotation device selectively rotates a workpiece support. According controller determines a position of the workpiece based on an amount of the light beam received through the workpiece when the workpiece intersects the path. A sensitivity of the light receiver apparatus is controlled based on a transmissivity of the workpiece. A position of the workpiece is determined when the workpiece is rotated based on the rotational position, an amount of the light beam received, the transmissivity of the workpiece, detection of a workpiece edge, and the controlled sensitivity of the light receiver apparatus.

公开(公告)号：US20200266032A1

公开(公告)日：2020-08-20

申请号：US16791308

申请日：2020-02-14

Applicant: Axcelis Technologies, Inc.

Inventor： James DeLuca ,  Andy Ray ,  Neil Demario ,  Rosario Mollica

IPC: H01J37/317 ,  H01J37/05

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

公开(公告)号：US20200216951A1

公开(公告)日：2020-07-09

申请号：US16240071

申请日：2019-01-04

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett

IPC: C23C16/44 ,  H01L21/265 ,  H01L21/683 ,  H01L21/67 ,  H01J37/18 ,  H01J37/317

Abstract: A system, method, and apparatus for heating a workpiece in chamber provides one or more surfaces generally enclosing a chamber volume. Vacuum and purge gas ports are in in fluid communication with the chamber volume. A heater apparatus selectively heats the workpiece on a workpiece support to a predetermined temperature and generates an outgassed material within the chamber volume. A vacuum valve provides selective fluid communication between a vacuum source and the vacuum port. A purge gas valve provides selective fluid communication between a purge gas source for a purge gas and the purge gas port. A controller controls the vacuum and purge gas valves to selectively flow the purge gas from the purge gas port to the vacuum port at a predetermined pressure while the workpiece is heated, thus removing and preventing condensation of the outgassed material on the chamber surfaces.

公开(公告)号：US10676370B2

公开(公告)日：2020-06-09

申请号：US15995707

申请日：2018-06-01

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh ,  Neil Basson

IPC: C01F7/48 ,  C23C16/12 ,  H01J37/317 ,  C01B7/13 ,  C23C14/48 ,  C23C16/448 ,  H01L21/02 ,  H01L21/265 ,  H01J37/08 ,  H01L21/306

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. An arc chamber forms a plasma from the aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A hydrogen co-gas source further introduces a hydrogen co-gas to react residual aluminum iodide and iodide, where the reacted residual aluminum iodide and iodide is evacuated from the system.