METHOD FOR SETTING GAP BETWEEN CATHODE AND FILAMENT

    公开(公告)号:US20240038490A1

    公开(公告)日:2024-02-01

    申请号:US17876812

    申请日:2022-07-29

    CPC classification number: H01J37/3171 H01J37/075

    Abstract: A cathode apparatus for an ion source has a cathode with a positioning feature and a blind hole. A cathode holder has an aperture defined by a thru-hole and a locating feature defined along an aperture axis. The thru-hole receives the cathode along the aperture axis in first and second alignment positions based on a rotational orientation of the positioning feature with respect to the locating feature. The first alignment position locates the cathode at a first axial position along the aperture axis. The second alignment position locates the cathode at a second axial position along the axial axis. A filament device has a filament clamp, a filament rod defining a filament axis, and a filament coupled to the filament rod. The filament clamp is in selective engagement with the filament rod to selectively position the filament along the filament axis within the blind hole.

    Multiple arc chamber source
    2.
    发明授权

    公开(公告)号:US11183365B2

    公开(公告)日:2021-11-23

    申请号:US16850066

    申请日:2020-04-16

    Abstract: An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to a carrousel that translates or rotates the respective one of the plurality of arc chambers to a beamline position associated with the beamline. One or more of the plurality of arc chambers can have at least one unique feature, or two or more of the plurality of arc chambers can be generally identical to one another.

    MULTIPLE ARC CHAMBER SOURCE
    3.
    发明申请

    公开(公告)号:US20200335302A1

    公开(公告)日:2020-10-22

    申请号:US16850066

    申请日:2020-04-16

    Abstract: An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to a carrousel that translates or rotates the respective one of the plurality of arc chambers to a beamline position associated with the beamline. One or more of the plurality of arc chambers can have at least one unique feature, or two or more of the plurality of arc chambers can be generally identical to one another.

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