公开(公告)号：US08703959B2

公开(公告)日：2014-04-22

申请号：US13638700

申请日：2011-03-28

Applicant: Koichi Kutose ,  Hiroki Inoue ,  Shiro Tsubokura

Inventor： Koichi Kutose ,  Hiroki Inoue ,  Shiro Tsubokura

IPC: C07D213/00

CPC classification number: C07D213/89 ,  C07D213/75

Abstract: There are provided a nitrogen-containing heterocyclic compound such as a substituted amino-pyridine-N-oxide compound represented by formula (1), which is useful as a synthetic intermediate for an agrochemical and the like; and a method for producing the nitrogen-containing heterocyclic compound. (In formula (1), R1 and R2 each represents a hydrogen atom or an unsubstituted or substituted alkyl group; R3 represents a hydrogen atom, an unsubstituted or substituted alkylcarbonyl group or the like; R4 represents an unsubstituted or substituted alkylcarbonyl group, an unsubstituted or substituted arylcarbonyl group or the like; A represents a hydroxyl group, a thiol group or the like; m represents any one of integers of 1 to 4; k represents any one of integers of 0 to 3; and k+m≦4.)

公开(公告)号：US08649208B2

公开(公告)日：2014-02-11

申请号：US13473752

申请日：2012-05-17

Applicant: Takanori Matsuzaki ,  Hiroki Inoue ,  Shuhei Nagatsuka

Inventor： Takanori Matsuzaki ,  Hiroki Inoue ,  Shuhei Nagatsuka

IPC: G11C11/24 ,  G11C5/06 ,  G11C7/00

CPC classification number: G11C11/404 ,  G11C16/0433 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/1255

Abstract: A semiconductor device includes a nonvolatile memory cell including a writing transistor including an oxide semiconductor, a reading transistor including a semiconductor material different from that of the writing transistor, and a capacitor. Data is written to the memory cell by turning on the writing transistor so that a potential is supplied to a node where a source electrode of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined potential is held in the node. Data is read out from the memory cell by supplying a precharge potential to a bit line, stopping the supply of the potential to the bit line, and determining whether the potential of the bit line is kept at the precharge potential or decreased.

Abstract translation: 半导体器件包括：非易失性存储单元，包括具有氧化物半导体的写入晶体管，包括与写入晶体管不同的半导体材料的读取晶体管，以及电容器。 通过接通写入晶体管将数据写入存储单元，使得电位被提供给写入晶体管的源电极，电容器的一个电极和读取晶体管的栅极电连接的节点，以及 然后关闭写入晶体管，使得在节点中保持预定的电位。 通过向位线提供预充电电位，停止对位线的电位供给，以及确定位线的电位是否保持在预充电电位还是减小，从存储单元读出数据。

公开(公告)号：US08586998B2

公开(公告)日：2013-11-19

申请号：US13557749

申请日：2012-07-25

Applicant: Hiroki Inoue ,  Keiji Ishibashi ,  Shinsuke Fujiwara

Inventor： Hiroki Inoue ,  Keiji Ishibashi ,  Shinsuke Fujiwara

IPC: H01L29/38

CPC classification number: H01L21/02019 ,  H01L21/02013 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7802

Abstract: Silicon carbide single crystal is prepared. Using the silicon carbide single crystal as a material, a silicon carbide substrate having a first face and a second face located at a side opposite to the first face is formed. In the formation of the silicon carbide substrate, a first processed damage layer and a second processed damage layer are formed at the first face and second face, respectively. The first face is polished such that at least a portion of the first processed damage layer is removed and the surface roughness of the first face becomes less than or equal to 5 nm. At least a portion of the second processed damage layer is removed while maintaining the surface roughness of the second plane greater than or equal to 10 nm.

Abstract translation: 制备碳化硅单晶。 使用碳化硅单晶作为材料，形成具有位于与第一面相反的一侧的第一面和第二面的碳化硅衬底。 在形成碳化硅衬底时，分别在第一面和第二面上形成第一加工损伤层和第二处理损伤层。 抛光第一面使得第一经处理的损伤层的至少一部分被去除并且第一面的表面粗糙度变得小于或等于5nm。 第二处理的损伤层的至少一部分被去除，同时保持第二平面的表面粗糙度大于或等于10nm。

公开(公告)号：US20130293506A1

公开(公告)日：2013-11-07

申请号：US13460881

申请日：2012-05-01

Applicant: Tarek El-Khaled ,  Hiroki Inoue ,  Deepan Shrivastava

Inventor： Tarek El-Khaled ,  Hiroki Inoue ,  Deepan Shrivastava

IPC: G06F3/041

CPC classification number: G06F3/044 ,  G01C21/3664 ,  G06F1/1626 ,  G06F1/1684 ,  G06F3/0416 ,  G06F3/0418

Abstract: A method for adjusting input sensitivity of a touchscreen. The method includes: providing input sensitivity of the touchscreen at a base level; increasing input sensitivity of the touchscreen above the base level in response to detection of at least one predetermined condition; and returning input sensitivity of the touchscreen to the base level when atmospheric temperature proximate to the touchscreen is equal to or greater than a first target temperature

Abstract translation: 一种用于调整触摸屏的输入灵敏度的方法。 该方法包括：提供触摸屏在基本级别的输入灵敏度; 响应于至少一个预定条件的检测，将触摸屏的输入灵敏度提高到基准电平以上; 并且当靠近触摸屏的大气温度等于或大于第一目标温度时，将触摸屏的输入灵敏度返回到基准水平

公开(公告)号：US08559038B2

公开(公告)日：2013-10-15

申请号：US13041915

申请日：2011-03-07

Applicant: Mina Kawai ,  Tetsuya Nose ,  Hiroki Inoue

Inventor： Mina Kawai ,  Tetsuya Nose ,  Hiroki Inoue

IPC: G06F3/12 ,  G06F15/16 ,  G06K15/22 ,  G06K15/00

CPC classification number: G06F3/1284 ,  G06F3/1204 ,  G06F3/127

Abstract: An automatic file transfer system includes a personal computer and one or more printers. The automatic file transfer system includes a transfer folder capable of containing one or more files, wherein, when the personal computer recognizes, through plug-and-play, that a printer among the one or more printers which are connected to the personal computer is powered on, if the printer currently recognized is a transfer-target printer, the personal computer executes in a repetitive manner, for the printer currently recognized, processes of: (i) determining whether or not a new file is moved into the transfer folder; and (ii) transferring, if it is determined that a new file is moved into the transfer folder, the new file to the printer currently recognized.

Abstract translation: 自动文件传送系统包括个人计算机和一个或多个打印机。 自动文件传送系统包括能够容纳一个或多个文件的传送文件夹，其中，当个人计算机通过即插即用来识别连接到个人计算机的一个或多个打印机中的打印机被供电时 如果当前识别的打印机是转印目标打印机，则个人计算机以重复的方式对当前识别的打印机执行以下处理：（i）确定新文件是否被移动到传送文件夹中; 和（ii）如果确定新文件被移动到传送文件夹中，则将新文件传送到当前被识别的打印机。

公开(公告)号：US08558238B2

公开(公告)日：2013-10-15

申请号：US11802458

申请日：2007-05-23

Applicant: Tomoaki Atsumi ,  Hiroki Inoue

Inventor： Tomoaki Atsumi ,  Hiroki Inoue

IPC: H01L29/10

CPC classification number: H01L21/02683 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1255 ,  H01L27/1285 ,  H01L27/1296 ,  H01L28/40

Abstract: In a semiconductor device including a digital circuit portion and an analog circuit portion having a capacitor portion provided over a substrate, the capacitor portion is provided with a first wiring, a second wiring and a plurality of blocks each having a plurality of capacitor elements. Further, each the plurality of capacitor elements provided in each block has a semiconductor film having a first impurity region and a plurality of second impurity regions provided apart with the first impurity region interposed therebetween, and a conductive film provided over the first impurity region with an insulating film therebetween. A capacitor is formed from the first impurity region, the insulating film, and the conductive film.

Abstract translation: 在包括数字电路部分和具有设置在衬底上的电容器部分的模拟电路部分的半导体器件中，电容器部分设置有第一布线，第二布线和多个具有多个电容器元件的块。 此外，设置在每个块中的多个电容器元件中的每一个具有半导体膜，该半导体膜具有第一杂质区和设置有分隔开第一杂质区的多个第二杂质区，并且在第一杂质区上设置有导电膜， 绝缘膜。 由第一杂质区，绝缘膜和导电膜形成电容器。

公开(公告)号：US08467232B2

公开(公告)日：2013-06-18

申请号：US13193966

申请日：2011-07-29

Applicant: Takanori Matsuzaki ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Hiroki Inoue

Inventor： Takanori Matsuzaki ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Hiroki Inoue

IPC: G11C11/24

CPC classification number: G11C16/0408 ,  G11C11/405 ,  G11C11/4076 ,  G11C11/4087 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/1207

Abstract: In a semiconductor device which includes a bit line, m (m is a natural number of 3 or more) word lines, a source line, m signal lines, first to m-th memory cells, and a driver circuit, the memory cell includes a first transistor and a second transistor for storing electrical charge accumulated in a capacitor, and the second transistor includes a channel formed in an oxide semiconductor layer. In the semiconductor device, the driver circuit generates a signal to be output to a (j−1)th (j is a natural number of 3 or more) signal line with the use of a signal to be output to a j-th signal line.

Abstract translation: 在包括位线的m（m为3以上的自然数）字线，源极线，m条信号线，第1〜第m存储器单元和驱动电路的半导体器件中，所述存储单元包括 第一晶体管和第二晶体管，用于存储积聚在电容器中的电荷，第二晶体管包括形成在氧化物半导体层中的沟道。 在半导体装置中，驱动电路使用要输出到第j信号的信号，生成输出到第（j-1）（j为3以上的自然数）信号线的信号 线。

公开(公告)号：US08450783B2

公开(公告)日：2013-05-28

申请号：US12978805

申请日：2010-12-27

Applicant: Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Takanori Matsuzaki ,  Hiroki Inoue

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Takanori Matsuzaki ,  Hiroki Inoue

IPC: H01L27/085

CPC classification number: H01L29/7869 ,  G11C16/0425 ,  H01L27/105 ,  H01L27/108 ,  H01L27/10802 ,  H01L27/10805 ,  H01L27/11 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/11563 ,  H01L27/11568 ,  H01L27/1225 ,  H01L28/40 ,  H01L29/78693 ,  H01L29/788 ,  H01L29/7881 ,  H01L29/792

Abstract: The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.

公开(公告)号：US08422272B2

公开(公告)日：2013-04-16

申请号：US13195105

申请日：2011-08-01

Applicant: Hiroki Inoue ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka

Inventor： Hiroki Inoue ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka

IPC: G11C11/24

CPC classification number: H01L27/1052 ,  G11C11/404 ,  G11C11/405 ,  G11C11/4091 ,  G11C16/0408 ,  G11C16/08 ,  G11C16/24 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/425 ,  H01L21/441 ,  H01L21/477 ,  H01L27/108 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/66969 ,  H01L29/78651 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device including a nonvolatile memory cell in which a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor are included is provided. Data is written to the memory cell by turning on the writing transistor and applying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor, so that the predetermined amount of charge is held in the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential.

Abstract translation: 提供了包括非易失性存储单元的半导体器件，其中包括包括氧化物半导体的写入晶体管，包括与写入晶体管不同的半导体材料的读取晶体管和电容器。 通过接通写入晶体管并将电位施加到写入晶体管的源极（或电极），电容器的一个电极和读取晶体管的栅电极的节点处，将数据写入存储单元 电连接，然后关闭写入晶体管，使得预定量的电荷被保持在节点中。 此外，当使用p沟道晶体管作为读取晶体管时，读取电位为正电位。

公开(公告)号：US20130005981A1

公开(公告)日：2013-01-03

申请号：US13583095

申请日：2011-03-08

Applicant: Hiroki Inoue ,  Kaoru Noda

Inventor： Hiroki Inoue ,  Kaoru Noda

IPC: C07D213/75

CPC classification number: C07D401/12 ,  C07D213/75

Abstract: Provided is a process for the preparation of t-butoxycarbonylamine compounds, which comprises using phosgene or a phosgene equivalent, t-butanol, and an organic base. Even when applied to a primary or secondary amine compound having low nucleophilicity, the process enables highly selective preparation of a t-butoxycarbonylamine compound at a low cost. In the process, a t-butoxycarbonylamine compound is prepared using: phosgene or a phosgene equivalent; t-butanol; an organic base; and either a primary or secondary amine compound or a primary or secondary ammonium salt.

Abstract translation: 提供了制备叔丁氧基羰基胺化合物的方法，其包括使用光气或光气当量，叔丁醇和有机碱。 即使应用于亲核性低的伯胺或仲胺化合物，也能够以低成本高度选择性地制备叔丁氧羰基胺化合物。 在此过程中，使用：光气或光气当量制备叔丁氧基羰基胺化合物; 叔丁醇 有机基地 和伯胺或仲胺化合物或伯或仲铵盐。