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    Silicon carbide substrate manufacturing method and silicon carbide substrate
    1.
    发明授权
    Silicon carbide substrate manufacturing method and silicon carbide substrate 有权
    碳化硅衬底制造方法和碳化硅衬底

    公开(公告)号：US08586998B2

    公开(公告)日：2013-11-19

    申请号：US13557749

    申请日：2012-07-25

    申请人： Hiroki Inoue ,  Keiji Ishibashi ,  Shinsuke Fujiwara

    发明人： Hiroki Inoue ,  Keiji Ishibashi ,  Shinsuke Fujiwara

    IPC分类号： H01L29/38

    CPC分类号： H01L21/02019 ,  H01L21/02013 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7802

    摘要： Silicon carbide single crystal is prepared. Using the silicon carbide single crystal as a material, a silicon carbide substrate having a first face and a second face located at a side opposite to the first face is formed. In the formation of the silicon carbide substrate, a first processed damage layer and a second processed damage layer are formed at the first face and second face, respectively. The first face is polished such that at least a portion of the first processed damage layer is removed and the surface roughness of the first face becomes less than or equal to 5 nm. At least a portion of the second processed damage layer is removed while maintaining the surface roughness of the second plane greater than or equal to 10 nm.

    摘要翻译： 制备碳化硅单晶。 使用碳化硅单晶作为材料，形成具有位于与第一面相反的一侧的第一面和第二面的碳化硅衬底。 在形成碳化硅衬底时，分别在第一面和第二面上形成第一加工损伤层和第二处理损伤层。 抛光第一面使得第一经处理的损伤层的至少一部分被去除并且第一面的表面粗糙度变得小于或等于5nm。 第二处理的损伤层的至少一部分被去除，同时保持第二平面的表面粗糙度大于或等于10nm。

    Method for manufacturing silicon carbide substrate
    2.
    发明授权
    Method for manufacturing silicon carbide substrate 失效
    碳化硅基板的制造方法

    公开(公告)号：US08435866B2

    公开(公告)日：2013-05-07

    申请号：US13256991

    申请日：2010-09-28

    申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    IPC分类号： H01L21/306 ,  H01L21/304

    CPC分类号： C30B29/36 ,  C30B33/06

    摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

    摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。

    METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
    5.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 失效
    制造碳化硅基板的方法

    公开(公告)号：US20120009761A1

    公开(公告)日：2012-01-12

    申请号：US13256991

    申请日：2010-09-28

    申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

    IPC分类号： H01L21/306 ,  H01L21/304

    CPC分类号： C30B29/36 ,  C30B33/06

    摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

    摘要翻译： 制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。 在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。 通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。 表面层至少部分去除。 在该去除步骤之后，背面和主表面彼此连接。

    Process for producing organolithium compound and process for producing substituted aromatic compound
    10.
    发明授权
    Process for producing organolithium compound and process for producing substituted aromatic compound 有权
    制备有机锂化合物的方法和制备取代的芳族化合物的方法

    公开(公告)号：US08871970B2

    公开(公告)日：2014-10-28

    申请号：US12998715

    申请日：2009-12-25

    申请人： Hiroki Inoue

    发明人： Hiroki Inoue

    IPC分类号： C07F5/02 ,  C07C217/08 ,  C07F1/02

    CPC分类号： C07C217/08 ,  C07C211/14 ,  C07F1/02 ,  C07F5/025

    摘要： A method for producing an organolithium compound includes the step of reacting an aromatic compound or a halogenated unsaturated aliphatic compound and a lithiating agent in the presence of a coordinating compound containing three or more elements having a coordinating ability in a molecule, at least one thereof being a nitrogen element, or a coordinating compound containing three or more oxygen elements having a coordinating ability in a molecule, at least one of the groups containing the oxygen elements having a coordinating ability being a tertiary alkoxy group, at a temperature of −40° C. to 40° C.

    摘要翻译： 有机锂化合物的制造方法包括使芳香族化合物或卤化不饱和脂肪族化合物与锂化剂在含有分子中具有配位能力的三种以上的配位化合物的存在下反应的工序，其中至少一个为 氮元素或含有三个或更多个在分子中具有配位能力的氧元素的配位化合物，至少一个含有具有叔烷氧基的配位能力的氧元素的基团在-40℃的温度下 至40℃