发明申请
- 专利标题： METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
- 专利标题（中）： 制造碳化硅基板的方法
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申请号： US13256991申请日： 2010-09-28
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公开(公告)号： US20120009761A1公开(公告)日： 2012-01-12
- 发明人: Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
- 申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
- 申请人地址： JP Osaka-shi, Osaka
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka-shi, Osaka
- 优先权： JP2010-024508 20100205
- 国际申请： PCT/JP2010/066828 WO 20100928
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/304
摘要：
At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.
公开/授权文献
- US08435866B2 Method for manufacturing silicon carbide substrate 公开/授权日：2013-05-07
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