Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
-
Application No.: US11802458Application Date: 2007-05-23
-
Publication No.: US08558238B2Publication Date: 2013-10-15
- Inventor: Tomoaki Atsumi , Hiroki Inoue
- Applicant: Tomoaki Atsumi , Hiroki Inoue
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-153548 20060601
- Main IPC: H01L29/10
- IPC: H01L29/10

Abstract:
In a semiconductor device including a digital circuit portion and an analog circuit portion having a capacitor portion provided over a substrate, the capacitor portion is provided with a first wiring, a second wiring and a plurality of blocks each having a plurality of capacitor elements. Further, each the plurality of capacitor elements provided in each block has a semiconductor film having a first impurity region and a plurality of second impurity regions provided apart with the first impurity region interposed therebetween, and a conductive film provided over the first impurity region with an insulating film therebetween. A capacitor is formed from the first impurity region, the insulating film, and the conductive film.
Public/Granted literature
- US20070290207A1 Semiconductor device and method for manufacturing semiconductor device Public/Granted day:2007-12-20
Information query
IPC分类: