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    ENHANCED ETCHING PROCESSES USING REMOTE PLASMA SOURCES
    111.
    发明申请
    ENHANCED ETCHING PROCESSES USING REMOTE PLASMA SOURCES 有权
    使用远程等离子体源的增强蚀刻工艺

    公开(公告)号：US20160284556A1

    公开(公告)日：2016-09-29

    申请号：US15173824

    申请日：2016-06-06

    Applicant: Applied Materials, Inc.

    Inventor： Nitin K. Ingle ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

    IPC: H01L21/3065 ,  H01J37/32

    Abstract: Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.

    Abstract translation: 蚀刻图案化衬底的方法可以包括使含氧前体流入与衬底处理区流体耦合的第一远程等离子体区域。 可以在第一远程等离子体区域中形成等离子体的同时将含氧前体流入该区域以产生含氧等离子体流出物。 所述方法还可以包括使含氟前体流入与基板处理区流体耦合的第二远程等离子体区域，同时在第二远程等离子体区域中形成等离子体以产生含氟等离子体流出物。 所述方法可以包括将含氧等离子体流出物和含氟等离子体流出物流入处理区域，并且使用流出物蚀刻容纳在基板处理区域中的图案化基板。

    Selectively etching metals and metal nitrides conformally
    113.
    发明授权
    Selectively etching metals and metal nitrides conformally 有权
    选择性地蚀刻金属和金属氮化物

    公开(公告)号：US09449843B1

    公开(公告)日：2016-09-20

    申请号：US14734222

    申请日：2015-06-09

    Applicant: Applied Materials, Inc.

    Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  David Thompson ,  Jeffrey W. Anthis ,  David Knapp ,  Benjamin Schmiege

    IPC: H01L21/3213

    CPC classification number: H01L21/32135 ,  C23F1/12

    Abstract: Methods of selectively etching metals and metal nitrides from the surface of a substrate are described. The etch selectively removes metals and metal nitrides relative to silicon-containing layers such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The etch removes material in a conformal manner by including an oxidation operation which creates a thin uniform metal oxide. The thin uniform metal oxide is then removed by exposing the metal oxide to a metal-halogen precursor in a substrate processing region. The metal oxide may be removed to completion and the etch may stop once the uniform metal oxide layer is removed. Etches described herein may be used to uniformly trim back material on high aspect ratio features which ordinarily show higher etch rates near the opening of a gap compared to deep within the gap.

    Abstract translation: 描述了从衬底的表面选择性地蚀刻金属和金属氮化物的方法。 蚀刻相对于诸如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅的含硅层选择性地去除金属和金属氮化物。 蚀刻通过包括产生薄的均匀金属氧化物的氧化操作以保形方式去除材料。 然后通过在基板处理区域中将金属氧化物暴露于金属卤素前体而除去薄的均匀金属氧化物。 金属氧化物可以被去除完成，并且一旦去除均匀的金属氧化物层就可能停止蚀刻。 本文所述的蚀刻可用于在高纵横比特征上均匀地修整材料，该特征通常在与间隙内的深度相比间隙开口附近显示更高的蚀刻速率。

    Radical-component oxide etch
    114.
    发明授权
    Radical-component oxide etch 有权

    公开(公告)号：US09437451B2

    公开(公告)日：2016-09-06

    申请号：US14703333

    申请日：2015-05-04

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Jingchun Zhang ,  Ching-Mei Hsu ,  Seung Park ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/311

    CPC classification number: H01L21/31116 ,  H01J37/32357

    Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

    Dry-etch selectivity
    115.
    发明授权
    Dry-etch selectivity 有权

    公开(公告)号：US09384997B2

    公开(公告)日：2016-07-05

    申请号：US14602835

    申请日：2015-01-22

    Applicant: Applied Materials, Inc.

    Inventor： He Ren ,  Jang-Gyoo Yang ,  Jonghoon Baek ,  Anchuan Wang ,  Soonam Park ,  Saurabh Garg ,  Xinglong Chen ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

    CPC classification number: H01L21/31116 ,  H01J37/32357

    Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.

    V trench dry etch
    116.
    发明授权
    V trench dry etch 有权
    V沟干蚀刻

    公开(公告)号：US09355856B2

    公开(公告)日：2016-05-31

    申请号：US14485551

    申请日：2014-09-12

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/302 ,  H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32357

    Abstract: Methods of producing V-shaped trenches in crystalline substrates are described. The methods involve processing a patterned substrate with etch masking materials defining each side of exposed silicon (100). The exposed silicon (100) is exposed to remotely-excited halogen-containing precursor including chlorine or bromine. The plasma effluents formed from the halogen-containing precursor preferentially remove silicon from all exposed facets other than silicon (111). Etching the crystalline substrates with the plasma effluents produce at least two silicon (111) facets between two adjacent masking elements. Forming the silicon (111) facets may be accelerated by pretreating the crystalline substrates using a halogen-containing precursor locally excited in a biased plasma to initiate the generation of the trench.

    Abstract translation: 描述了在晶体衬底中生产V形沟槽的方法。 该方法涉及用限定暴露的硅（100）的每一侧的蚀刻掩模材料来处理图案化衬底。 暴露的硅（100）暴露于包含氯或溴的远红外含卤素前体。 由含卤素的前体形成的等离子体流出物优先从除硅（111）以外的所有暴露面除去硅。 用等离子体流出物蚀刻晶体衬底在两个相邻的掩模元件之间产生至少两个硅（111）刻面。 可以通过使用在偏压等离子体中局部激发的含卤素前体来预处理晶体衬底来开始形成硅（111）刻面，以开始产生沟槽。

    Oxide and metal removal
    117.
    发明授权
    Oxide and metal removal 有权
    氧化物和金属去除

    公开(公告)号：US09309598B2

    公开(公告)日：2016-04-12

    申请号：US14288696

    申请日：2014-05-28

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Nitin K. Ingle ,  Jeffrey W. Anthis ,  Benjamin Schmiege

    IPC: C03C15/00 ,  C23F1/12 ,  H01J37/32 ,  H01L21/3213

    CPC classification number: C23F1/12 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/32135 ,  H01L21/32138

    Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.

    Abstract translation: 本文描述了用于蚀刻难以挥发的金属膜的方法。 这些方法包括将金属膜暴露于含氯前体（例如Cl 2）。 然后从基板处理区域除去氯。 将含碳和氮的前体（例如TMEDA）输送到基底加工区域以形成从金属膜的表面解吸的挥发性金属络合物。 所提供的方法去除金属，同时非常缓慢地除去其它暴露的材料。 金属层的表面上可能存在薄的金属氧化物层，在这种情况下，可以使用来自氢的局部等离子体来除去氧或使近表面区域非晶化，这已经被发现增加了整个蚀刻速率。

    V TRENCH DRY ETCH
    118.
    发明申请
    V TRENCH DRY ETCH 有权

    公开(公告)号：US20160079072A1

    公开(公告)日：2016-03-17

    申请号：US14485551

    申请日：2014-09-12

    Applicant: Applied Materials, Inc.

    Inventor： Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/32357

    Abstract: Methods of producing V-shaped trenches in crystalline substrates are described. The methods involve processing a patterned substrate with etch masking materials defining each side of exposed silicon (100). The exposed silicon (100) is exposed to remotely-excited halogen-containing precursor including chlorine or bromine. The plasma effluents formed from the halogen-containing precursor preferentially remove silicon from all exposed facets other than silicon (111). Etching the crystalline substrates with the plasma effluents produce at least two silicon (111) facets between two adjacent masking elements. Forming the silicon (111) facets may be accelerated by pretreating the crystalline substrates using a halogen-containing precursor locally excited in a biased plasma to initiate the generation of the trench.

    Abstract translation: 描述了在晶体衬底中生产V形沟槽的方法。 该方法涉及用限定暴露的硅（100）的每一侧的蚀刻掩模材料来处理图案化衬底。 暴露的硅（100）暴露于包含氯或溴的远红外含卤素前体。 由含卤素的前体形成的等离子体流出物优先从除硅（111）以外的所有暴露面除去硅。 用等离子体流出物蚀刻晶体衬底在两个相邻的掩模元件之间产生至少两个硅（111）刻面。 可以通过使用在偏压等离子体中局部激发的含卤素前体来预处理晶体衬底来开始形成硅（111）刻面，以开始产生沟槽。

    INTEGRATED BIT-LINE AIRGAP FORMATION AND GATE STACK POST CLEAN
    119.
    发明申请
    INTEGRATED BIT-LINE AIRGAP FORMATION AND GATE STACK POST CLEAN 有权
    集成的位线空气格栅和门盖清洗

    公开(公告)号：US20160035614A1

    公开(公告)日：2016-02-04

    申请号：US14448059

    申请日：2014-07-31

    Applicant: Applied Materials, Inc.

    Inventor： Vinod R. Purayath ,  Randhir Thakur ,  Shankar Venkataraman ,  Nitin K. Ingle

    IPC: H01L21/764 ,  H01L29/06 ,  H01L21/311 ,  H01L29/49 ,  H01L21/02 ,  H01L27/115

    CPC classification number: H01L21/764 ,  H01J37/32357 ,  H01L21/02071 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/68764 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/66833 ,  H01L29/7887

    Abstract: Methods of forming flash memory cells are described which incorporate air gaps for improved performance. The methods are useful for so-called “2-d flat cell” flash architectures. 2-d flat cell flash memory involves a reactive ion etch to dig trenches into multi-layers containing high work function and other metal layers. The methods described herein remove the metal oxide debris from the sidewalls of the multi-layer trench and then, without breaking vacuum, selectively remove shallow trench isolation (STI) oxidation which become the air gaps. Both the metal oxide removal and the STI oxidation removal are carried out in the same mainframe with highly selective etch processes using remotely excited fluorine plasma effluents.

    Abstract translation: 描述形成闪速存储器单元的方法，其包括用于改善性能的气隙。 这些方法对于所谓的“2-d平坦单元”闪存架构是有用的。 2-d平板电池闪存包括反应离子蚀刻，以将沟槽挖掘成包含高功函数和其它金属层的多层。 本文描述的方法从多层沟槽的侧壁去除金属氧化物碎屑，然后在不破坏真空的情况下选择性地去除成为气隙的浅沟槽隔离（STI）氧化。 金属氧化物去除和STI氧化去除都是使用远程激发的氟等离子体流出物，在相同的主机中进行高选择性蚀刻工艺。

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