公开(公告)号：US12279433B2

公开(公告)日：2025-04-15

申请号：US17721574

申请日：2022-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changbum Kim ,  Sunghoon Kim

IPC: H10B43/40 ,  G11C16/24 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

Abstract: A semiconductor device includes a cell region and a peripheral circuit region. The cell region includes gate electrode layers stacked on a substrate, channel structures extending in a first direction, extending through the gate electrode layers, and connected to the substrate, and bit lines extending in a second direction and connected to the channel structures above the gate electrode layers. The peripheral circuit region includes page buffers connected to the bit lines. Each page buffer includes a first and second elements adjacent to each other in the second direction and sharing a common active region between a first gate structure of the first element and a second gate structure of the second element in the second direction. Boundaries of the common active region include an oblique boundary extending in an oblique direction forming an angle between 0 and 90 degrees with the second direction.

公开(公告)号：US12279415B2

公开(公告)日：2025-04-15

申请号：US18337134

申请日：2023-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu Choi ,  Myeong-Dong Lee ,  Hyeon-Woo Jang ,  Keunnam Kim ,  Sooho Shin ,  Yoosang Hwang

IPC: H10B12/00 ,  G11C5/12

Abstract: Disclosed are a semiconductor memory device and a method of fabricating the same. The device includes a substrate including an active pattern with doped regions, a gate electrode crossing the active pattern between the doped regions, a bit line crossing the active pattern and being electrically connected to one of the doped regions, a spacer on a side surface of the bit line, a first contact coupled to another of the doped regions and spaced apart from the bit line with the spacer interposed therebetween, a landing pad on the first contact, and a data storing element on the landing pad. The another of the doped regions has a top surface, an upper side surface, and a curved top surface that extends from the top surface to the upper side surface. The first contact is in contact with the curved top surface and the upper side surface.

公开(公告)号：US12279408B2

公开(公告)日：2025-04-15

申请号：US18405736

申请日：2024-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shaofeng Ding ,  Jeong Hoon Ahn ,  Yun Ki Choi

IPC: H10B10/00 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10B12/00

Abstract: A semiconductor device includes a substrate including a logic cell region and a connection region, a dummy transistor on the connection region, an intermediate connection layer on the dummy transistor, the intermediate connection layer including a connection pattern electrically connected to the dummy transistor, a first metal layer on the intermediate connection layer, an etch stop layer between the intermediate connection layer and the first metal layer, the etch stop layer covering a top surface of the connection pattern, and a penetration contact extended from the first metal layer toward a bottom surface of the substrate penetrating the connection region.

公开(公告)号：US12279365B2

公开(公告)日：2025-04-15

申请号：US17957870

申请日：2022-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunseok Hong

IPC: H05K1/02

Abstract: A flexible circuit board for transmitting a signal in a frequency band includes an intermediate region in which a signal line is disposed as a transmission line for transmitting the signal in the frequency band, and a pad region extending from the intermediate region and disposed at one end or both ends of the flexible circuit board, a pad electrically connected to the signal line and formed to face a first direction of the flexible circuit board, and a ground pattern overlapping at least a portion of the pad and formed to face a second direction of the flexible circuit board and disposed in the pad region where the second direction is opposite to the first direction.

公开(公告)号：US12279229B2

公开(公告)日：2025-04-15

申请号：US17680124

申请日：2022-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Anil Agiwal ,  Soenghun Kim

IPC: H04W68/02 ,  H04W4/90 ,  H04W72/23 ,  H04W74/0833 ,  H04W76/28

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. According to embodiment, the method comprises identifying whether a timer related with a small data transmission (SDT) procedure is running at the UE in a radio resource control (RRC) inactive state, while the timer is running, performing at least one of monitoring of a system information (SI) change indication or an emergency notification in any paging occasion at least once per a discontinuous reception (DRX) cycle and obtaining at least one of the SI change indication or the emergency notification, based on a result of the monitoring.

公开(公告)号：US12279058B2

公开(公告)日：2025-04-15

申请号：US18118307

申请日：2023-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Sub Shim

IPC: H04N5/335 ,  H04N25/709 ,  H04N25/78

Abstract: An image sensor includes: a pixel including a boosting capacitor with one electrode connected to a first node to which a charge generated from a photoelectric element is transmitted, and outputting a pixel voltage based on the first node; a row driver outputting a reset-signal that resets the first node, a boosting control-signal applied to the other electrode, and a transmission-signal transmitting the charge to the first node; a read-out-circuit receiving the pixel voltage as a first-signal before the transmission-signal is output to the pixel, and receiving the pixel voltage as a second-signal after the transmission-signal is output to the pixel. A controller controlling the row driver to change the boosting control-signal from a first-level to a second-level lower than the first-level after changing the reset-signal from an enable to a disable, and controlling the read-out-circuit to receive the first-signal and the second-signal during which the boosting control-signal is at the second-level.

公开(公告)号：US12278676B2

公开(公告)日：2025-04-15

申请号：US18160582

申请日：2023-01-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Duho Chu ,  Myeongsu Oh ,  Hojin Jung ,  Changmin Kim

IPC: H04B7/06 ,  H04B1/44 ,  H04B7/0404 ,  H04B17/10 ,  H04M1/02

Abstract: An electronic device is provided. The electronic device includes a first antenna, a second antenna segmented from the first antenna, a switch selectively coupled to the first antenna and the second antenna, a front end module connected to the switch, and a radio frequency (RF) communication circuit, wherein the RF communication circuit controls to communicate using the first antenna, determines whether radiation power through the first antenna is equal to or greater than a predetermined value, and if the radiation power through the first antenna is greater than or equal to the predetermined value, checks the in-phase quadrature phase (IQ) value of the first antenna, determines whether the IQ value corresponds to a switching condition of the second antenna, and if the IQ value corresponds to the switching condition of the second antenna, may switch the first antenna to the second antenna.

公开(公告)号：US12278285B2

公开(公告)日：2025-04-15

申请号：US18239677

申请日：2023-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungchan Yun ,  Donghwan Han

IPC: H01L29/78 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device includes a plurality of channel layers disposed on an active region of a substrate and spaced apart from each other in a first direction, a first gate structure surrounding the plurality of channel layers, first source/drain regions disposed on the active region on both lateral sides of the first gate structure and contacting the plurality of channel layers and spaced apart from each other in a second direction, an element isolation layer disposed on an upper portion of the first gate structure, a semiconductor layer disposed on the element isolation layer and having a vertical region extending in the first direction and including second source/drain regions spaced apart from each other in the first direction, and a second gate structure disposed to surround a portion of the vertical region. The semiconductor device further includes first to fourth contact plugs.

公开(公告)号：US12278260B2

公开(公告)日：2025-04-15

申请号：US17407653

申请日：2021-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byunghoon Na ,  Kiyoung Lee ,  Jooho Lee ,  Myoungho Jeong

IPC: H01G4/30 ,  H01L49/02 ,  H10N70/00 ,  H10N70/20

Abstract: A capacitor includes a first electrode including a first reinforcement material having a perovskite crystal structure; and a first metallic material having a perovskite crystal structure; a second electrode on the first electrode; and a dielectric layer between the first electrode and the second electrode, wherein the first metallic material has greater a greater electronegativity than that of the first reinforcement material.

公开(公告)号：US12278222B2

公开(公告)日：2025-04-15

申请号：US18338372

申请日：2023-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yanggyoo Jung ,  Chulwoo Kim ,  Hyo-Chang Ryu ,  Yun Seok Choi

IPC: H01L25/16 ,  H01L21/48 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/367 ,  H01L23/48 ,  H01L23/498 ,  H01L23/528 ,  H01L23/538 ,  H01L25/00

Abstract: A semiconductor package may include a package substrate, a first interposer substrate mounted on the package substrate, and a first semiconductor chip disposed on the first interposer substrate. The first interposer substrate may include a first base layer, a second base layer disposed on the first base layer, circuit patterns provided in each of the first base layer and the second base layer, and an integrated device embedded in the first base layer and connected to at least one of the circuit patterns. A top surface of the first base layer may contact a bottom surface of the second base layer.