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公开(公告)号：US10243285B2
公开(公告)日：2019-03-26
申请号：US15856295
申请日：2017-12-28
摘要： An electrical connector includes an anode for conducting an electrical supply current from a source to a destination, a cathode for conducting an electrical return current from the destination to the source, and an insulator that prevents electrical conduction between the anode and the cathode. The first and second shapes are such as to provide a conformity of one to the other, with the insulator placed therebetween and having a predetermined relatively thin thickness. A predetermined low-resistance path for the supply current is provided respectively by the anode and the cathode, and a proximity of the anode to the cathode along these paths provides a predetermined low self-inductance of the connector. The anode and the cathode each comprises a plurality of sections that are disposed at one or more predetermined angles to form a rigid assembly that accommodates a geometry between the source and the destination.
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公开(公告)号：US10241706B2
公开(公告)日：2019-03-26
申请号：US15582252
申请日：2017-04-28
发明人： Seiji Mochizuki , Katsushige Matsubara , Ren Imaoka , Hiroshi Ueda , Ryoji Hashimoto , Toshiyuki Kaya
摘要： There is a problem that memory protection against access to a shared memory by a sub-arithmetic unit used by a program executed in a main-arithmetic unit cannot be performed in a related-art semiconductor device. According to one embodiment, a semiconductor device includes a sub-arithmetic unit configured to execute a process of a part of a program executed by a main-arithmetic unit, and a shared memory shared by the main-arithmetic unit and the sub-arithmetic unit, in which the sub-arithmetic unit includes a memory protection unit configured to permit or prohibit access to the shared memory based on an access permission range address value provided from the main-arithmetic unit, the access to the shared memory being access that arises from a process executed by the sub-arithmetic unit.
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公开(公告)号：US10241154B2
公开(公告)日：2019-03-26
申请号：US15264703
申请日：2016-09-14
发明人： Hideki Kiuchi
IPC分类号： G01R31/36
摘要： A voltage monitoring module includes a first terminal configured to be coupled to a high-potential-side terminal of a first battery cell, and a second terminal configured to be coupled to a low-potential-side of the first battery cell.
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公开(公告)号：US10233790B2
公开(公告)日：2019-03-19
申请号：US15365661
申请日：2016-11-30
申请人： OTICS CORPORATION
摘要： A variable valve mechanism of an internal combustion engine includes a cam, a transmission mechanism, a first variable device that controls the transmission mechanism to continuously change at least a maximum lift amount of a lift curve indicating a lift amount of a valve that corresponds to a rotation angle of the internal combustion engine, and a second variable device that controls the transmission mechanism to continuously change at least an operation angle of the lift curve. When the lift curve lies in any condition within a predetermined range that covers all or part of a variable range of the lift curve, an absolute value of a ratio of a maximum lift amount variation to an operation angle variation for a slight change from the condition caused by the first variable device is larger than that for a slight change from the condition caused by the second variable device.
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公开(公告)号：US10232447B2
公开(公告)日：2019-03-19
申请号：US15042057
申请日：2016-02-11
发明人： Yuzuru Ono , Tsukasa Yokono , Hisayuki Hirai , Shigeru Shibata
摘要： According to one implementation, a drilling machine includes a drilling structure and a travelling machine. The drilling structure drills an object to be drilled composed of at least one structural object on a platy part. The travelling machine positions the drilling structure in a travelling direction of the travelling machine by travelling in a longitudinal direction of the at least one structural object using the at least one structural object as a guide.
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公开(公告)号：US10230707B2
公开(公告)日：2019-03-12
申请号：US14933195
申请日：2015-11-05
发明人： Daisuke Oshida
摘要： An object of the present invention is to prevent an attack from or via a communication device on an information apparatus in a communication system including the information apparatus, the communication device coupled to the information apparatus in the aftermarket, a server that authenticates the communication device, and a communication unit between the communication device and the server.A communication device includes a first interface that performs first communications with a server, a second interface that performs second communications with an information apparatus, and an information processing unit that performs an information process including a communication protocol process accompanied by the first and second communications. The information processing unit of the communication device sends a signature of the communication device from the first interface to the server, receives via the first interface a driver sent after the server authenticates the communication device on the basis of the received signature, and sends the received driver from the second interface to the information apparatus.
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公开(公告)号：US10229925B2
公开(公告)日：2019-03-12
申请号：US15879257
申请日：2018-01-24
发明人： Tadashi Yamaguchi
IPC分类号： H01L21/67 , H01L27/11568 , H01L21/285 , H01L21/324 , H01L21/762 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/66 , H01L29/78 , H01L29/792 , H01L21/28 , H01L27/11573
摘要： A method of manufacturing a semiconductor device, includes forming a fin structure on a main surface of semiconductor substrate, the fin structure including a silicon material; forming a first gate electrode over the fin structure via a first insulating film, and forming a second gate electrode over the fin structure via a second insulating film having a charge accumulating part, such that the second gate electrode is disposed along a sidewall of the first gate electrode in a plan view; forming source and drain regions over a surface of the fin structure at both sides of a structure defined by the first and second gate electrodes; performing a first heat treatment to the semiconductor substrate to keep the semiconductor substrate at a first predetermined temperature; and forming a first metal film on the fin structure by sputtering in condition that the semiconductor substrate is at the first predetermined temperature.
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公开(公告)号：US10224083B2
公开(公告)日：2019-03-05
申请号：US15926672
申请日：2018-03-20
发明人： Tomoya Saito
摘要： A semiconductor device according to one embodiment includes a unique ID generation circuit configured to generate a unique ID using a memory array including a plurality of complementary cells, each of the complementary cells includes first and second memory cells MC1 and MC2. The unique ID generation circuit uses, when data in the complementary cell read out in a first state in which an initial threshold voltage of the first memory cell MC1 has been virtually offset and data in the complementary cell read out in a second state in which an initial threshold voltage of the second memory cell MC2 has been virtually offset coincide with each other, the data in the complementary cell as the unique ID.
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公开(公告)号：US10222847B2
公开(公告)日：2019-03-05
申请号：US15224380
申请日：2016-07-29
发明人： Yuko Kitaji , Kazuki Fukuoka , Ryo Mori , Toshifumi Uemura
IPC分类号： G06F1/30 , G06F1/32 , G06F1/10 , G06F1/3237
摘要： There is provided a semiconductor device that can follow a fast voltage change such as a large voltage drop occurring at the time of rapid load fluctuation. The semiconductor device includes a voltage sensor which monitors a power supply voltage at a sampling speed higher than the assumed frequency of power supply voltage fluctuation and outputs a voltage code value, a voltage drop determination circuit which determines, from the voltage code value, that a voltage drop causing a malfunction of a system occurs, and outputs a clock stop signal, and a clock control circuit which controls clock stop, restart, and frequency change.
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公开(公告)号：US10209277B2
公开(公告)日：2019-02-19
申请号：US15634394
申请日：2017-06-27
申请人： Hitachi Metals, Ltd.
发明人： Ken Okuyama , Katsuya Akimoto , Naoki Futakuchi , Jun Umetsu , Yujiro Tomita
摘要： A current sensor includes, a bus bar through which a current flows, a magnetic detection element detecting a magnetic field intensity generated by the current, first and second shielding plates arranged so as to sandwich the bus bar between the first and second shielding plates, a first conductive plate made of a conductive nonmagnetic material, arranged between the bus bar and the first shielding plate, and a second conductive plate made of the conductive nonmagnetic material, arranged between the bus bar and the second shielding plate, wherein the magnetic detection element is arranged at a first conductive plate-side. A distance between the first conductive plate and the bus bar is longer than a distance between the second conductive plate and the bus bar. The first conductive plate includes a slit formed in the first conductive plate at an overlapping position, and the slit pierces the first conductive plate.
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