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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10180711B2

    公开(公告)日：2019-01-15

    申请号：US15224380

    申请日：2016-07-29

    Applicant: Renesas Electronics Corporation

    Inventor： Yuko Kitaji ,  Kazuki Fukuoka ,  Ryo Mori ,  Toshifumi Uemura

    IPC: G06F1/30 ,  G06F1/32 ,  G06F1/10

    Abstract: There is provided a semiconductor device that can follow a fast voltage change such as a large voltage drop occurring at the time of rapid load fluctuation. The semiconductor device includes a voltage sensor which monitors a power supply voltage at a sampling speed higher than the assumed frequency of power supply voltage fluctuation and outputs a voltage code value, a voltage drop determination circuit which determines, from the voltage code value, that a voltage drop causing a malfunction of a system occurs, and outputs a clock stop signal, and a clock control circuit which controls clock stop, restart, and frequency change.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190129488A1

    公开(公告)日：2019-05-02

    申请号：US16219758

    申请日：2018-12-13

    Applicant: Renesas Electronics Corporation

    Inventor： Yuko Kitaji ,  Kazuki Fukuoka ,  Ryo Mori ,  Toshifumi Uemura

    IPC: G06F1/30

    CPC classification number: G06F1/305 ,  G06F1/10 ,  G06F1/32 ,  G06F1/3237

    Abstract: A semiconductor device includes a voltage sensor which samples a power supply voltage at a speed faster than fluctuations in the power supply voltage and encodes the power supply voltage into a voltage code value. A voltage drop determination circuit detects a voltage drop based on the voltage code value, and a clock control circuit generates a clock. The clock control circuit stops the clock when the voltage drop determination circuit detects the voltage drop. The voltage drop determination circuit includes a prediction computation circuit which looks ahead a voltage value from a history of the voltage code value and predicts a variation value, and the prediction computation circuit includes a circuit for masking a prediction value if a differential value of the prediction value is continuously negative for a predetermined cycle.

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10222847B2

    公开(公告)日：2019-03-05

    申请号：US15224380

    申请日：2016-07-29

    Applicant: Renesas Electronics Corporation

    Inventor： Yuko Kitaji ,  Kazuki Fukuoka ,  Ryo Mori ,  Toshifumi Uemura

    IPC: G06F1/30 ,  G06F1/32 ,  G06F1/10 ,  G06F1/3237

    Abstract: There is provided a semiconductor device that can follow a fast voltage change such as a large voltage drop occurring at the time of rapid load fluctuation. The semiconductor device includes a voltage sensor which monitors a power supply voltage at a sampling speed higher than the assumed frequency of power supply voltage fluctuation and outputs a voltage code value, a voltage drop determination circuit which determines, from the voltage code value, that a voltage drop causing a malfunction of a system occurs, and outputs a clock stop signal, and a clock control circuit which controls clock stop, restart, and frequency change.

    Semiconductor integrated circuit device
    9.
    发明授权
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号：US08730703B2

    公开(公告)日：2014-05-20

    申请号：US13748663

    申请日：2013-01-24

    Applicant: Renesas Electronics Corporation

    Inventor： Kazuki Fukuoka ,  Yasuto Igarashi ,  Ryo Mori ,  Yoshihiko Yasu ,  Toshio Sasaki

    IPC: H02M1/00 ,  G06F1/26

    CPC classification number: H03K5/00 ,  H01L27/0203 ,  H01L27/0207 ,  H01L27/0928 ,  H01L27/11807 ,  H03K3/00 ,  H03K19/0016

    Abstract: Efficient reduction in power consumption is achieved by combinational implementation of a power cutoff circuit technique using power supply switch control and a DVFS technique for low power consumption. A power supply switch section fed with power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in a DEEP-NWELL region formed over a semiconductor substrate. Another power supply switch section fed with another power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in another DEEP-NWELL region formed over the semiconductor substrate. In this arrangement, there arises no possibility of short-circuiting between different power supplies via each DEEP-NWELL region formed over the semiconductor substrate.

    Abstract translation: 通过使用电源开关控制和DVFS技术组合实现断电电路技术实现功耗的有效降低，实现低功耗。 在半导体基板上形成的DEEP-NWELL区域中，形成供给电源电压的电源开关部，由电源开关部进行电源切断的电路块和电平移位器。 供给另一电源电压的另一个电源开关部分，由电源开关部分执行电源切断的电路块和电平移位器形成在形成在半导体衬底上的另一个DEEP-NWELL区域中。 在这种布置中，不存在通过半导体衬底上形成的每个DEEP-NWELL区域在不同电源之间短路的可能性。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10782763B2

    公开(公告)日：2020-09-22

    申请号：US16219758

    申请日：2018-12-13

    Applicant: Renesas Electronics Corporation

    Inventor： Yuko Kitaji ,  Kazuki Fukuoka ,  Ryo Mori ,  Toshifumi Uemura

    IPC: G06F1/30 ,  G06F1/10 ,  G06F1/32 ,  G06F1/3237

    Abstract: A semiconductor device includes a voltage sensor which samples a power supply voltage at a speed faster than fluctuations in the power supply voltage and encodes the power supply voltage into a voltage code value. A voltage drop determination circuit detects a voltage drop based on the voltage code value, and a clock control circuit generates a clock. The clock control circuit stops the clock when the voltage drop determination circuit detects the voltage drop. The voltage drop determination circuit includes a prediction computation circuit which looks ahead a voltage value from a history of the voltage code value and predicts a variation value, and the prediction computation circuit includes a circuit for masking a prediction value if a differential value of the prediction value is continuously negative for a predetermined cycle.

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