Invention Grant
- Patent Title: Semiconductor device and manufacturing method for the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US14536620Application Date: 2014-11-08
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Publication No.: US09171767B2Publication Date: 2015-10-27
- Inventor: Ryo Mori , Kazuki Fukuoka , Naozumi Morino , Yoshinori Deguchi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2012-070840 20120327
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/66 ; H01L23/538 ; H01L21/02 ; H01L23/00 ; H01L23/528 ; H01L21/768 ; H01L23/522
Abstract:
A semiconductor device includes a substrate including a circuit region where a circuit element is formed, a multilayer wiring layer that is formed on the substrate and composed of a plurality of wiring layers and a plurality of via layers that are laminated, and an electrode pad that is formed on the multilayer wiring layer. An interlayer insulating film is formed in a region of a first wiring layer that is a top layer of the plurality of wiring layers, in the region the electrode pad and the first circuit region overlapping each other in a planar view of the electrode pad.
Public/Granted literature
- US20150076709A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME Public/Granted day:2015-03-19
Information query
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