公开(公告)号：US11320747B2

公开(公告)日：2022-05-03

申请号：US17121542

申请日：2020-12-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shinn-Sheng Yu ,  Ru-Gun Liu ,  Hsu-Ting Huang ,  Kenji Yamazoe ,  Minfeng Chen ,  Shuo-Yen Chou ,  Chin-Hsiang Lin

IPC: G03F7/20

Abstract: Photolithography apparatus includes a radiation source, a mask to modify radiation from the radiation source so the radiation exposes photoresist layer disposed on a semiconductor substrate in patternwise manner, a wafer stage, and a controller. The wafer stage supports the semiconductor substrate. The controller determines target total exposure dose for the photoresist layer and target focus position for the photoresist layer; and controls exposure of first portion of the photoresist layer to first exposure dose of radiation at first focus position using first portion of the mask, moving the semiconductor substrate relative to the mask; and exposure of the first portion of the photoresist layer to second exposure dose of radiation using second portion of the mask at second focus position, and exposure of second portion of the photoresist layer to the second exposure dose at the second focus position using the first portion of the mask.

公开(公告)号：US11294286B2

公开(公告)日：2022-04-05

申请号：US16287450

申请日：2019-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ru-Gun Liu ,  Chin-Hsiang Lin ,  Cheng-I Huang ,  Chih-Ming Lai ,  Chien-Wen Lai ,  Ken-Hsien Hsieh ,  Shih-Ming Chang ,  Yuan-Te Hou

IPC: G03F7/20 ,  G03F1/42 ,  G03F1/68 ,  G03F1/50

Abstract: A photo mask for manufacturing a semiconductor device includes a first pattern extending in a first direction, a second pattern extending in the first direction and aligned with the first pattern, and a sub-resolution pattern extending in the first direction, disposed between an end of the first pattern and an end of the second pattern. A width of the first pattern and a width of the second pattern are equal to each other, and the first pattern and the second pattern are for separate circuit elements in the semiconductor device.

公开(公告)号：US11281107B2

公开(公告)日：2022-03-22

申请号：US16905016

申请日：2020-06-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hui Weng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/40 ,  H01L21/027 ,  G03F7/30 ,  G03F7/20

Abstract: Methods for performing a lithography process are provided. The method for performing a lithography process includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed portion between unexposed portions. The method for performing a lithography process further includes developing the resist layer to remove the exposed portion of the resist layer such that an opening is formed between the unexposed portions and forming a post treatment coating material in the opening and over the unexposed portions of the resist layer. The method for performing a lithography process further includes reacting a portion of the unexposed portions of the resist layer with the post treatment coating material by performing a post treatment process and removing the post treatment coating material.

公开(公告)号：US11276568B2

公开(公告)日：2022-03-15

申请号：US16732146

申请日：2019-12-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Ling Chang Chien ,  Chien-Chih Chen ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Yahru Cheng

IPC: C09D125/06 ,  C09D125/18 ,  C09D133/12 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  C09D125/16 ,  H01L21/768 ,  H01L21/033

Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.

公开(公告)号：US20210375667A1

公开(公告)日：2021-12-02

申请号：US17373339

申请日：2021-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang Lin ,  Keng-Chu Lin ,  Shwang-Ming Jeng ,  Teng-Chun Tsai ,  Tsu-Hsiu Perng ,  Fu-Ting Yen

IPC: H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

Abstract: An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.

公开(公告)号：US11158509B2

公开(公告)日：2021-10-26

申请号：US16877755

申请日：2020-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Tien Shen ,  Chi-Cheng Hung ,  Chin-Hsiang Lin ,  Chien-Wei Wang ,  Ching-Yu Chang ,  Chih-Yuan Ting ,  Kuei-Shun Chen ,  Ru-Gun Liu ,  Wei-Liang Lin ,  Ya Hui Chang ,  Yuan-Hsiang Lung ,  Yen-Ming Chen ,  Yung-Sung Yen

IPC: H01L21/265 ,  H01L21/311 ,  H01L21/033

Abstract: A method for semiconductor manufacturing includes providing a substrate, forming a patterning layer over the substrate, and patterning the patterning layer to form a hole in the patterning layer. The method also includes applying a first directional etching to two inner sidewalls of the hole to expand the hole along a first direction and applying a second directional etching to another two inner sidewalls of the hole to expand the hole along a second direction that is different from the first direction.

公开(公告)号：US11137685B2

公开(公告)日：2021-10-05

申请号：US16858846

申请日：2020-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  H01L21/67 ,  G03F7/039 ,  G03F7/38 ,  G03F7/40

Abstract: The present disclosure provides a method that includes coating an edge portion of a wafer by a first chemical solution including a chemical mixture of an acid-labile group, a solubility control unit and a thermal acid generator; curing the first chemical solution to form a first protecting layer on the edge portion of the wafer; coating a resist layer on a front surface of the wafer; removing the first protecting layer by a first removing solution; and performing an exposing process to the resist layer.

公开(公告)号：US11127592B2

公开(公告)日：2021-09-21

申请号：US15994091

申请日：2018-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ching Chang ,  Ching-Yu Chang ,  Chin-Hsiang Lin ,  Yen-Hao Chen

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/02 ,  G03F7/00 ,  G03F7/095 ,  G03F7/16 ,  B05D1/00

Abstract: A method includes forming a photoresist layer over a substrate, where the photoresist layer includes a polymer blended with a photo-acid generator (PAG), exposing the photoresist layer to a radiation source, and developing the photoresist layer, resulting in a patterned photoresist layer. The PAG is bonded to one or more polarity-enhancing group (PEG), which is configured to increase a dipole moment of the PAG. The exposing may separate the PAG into a cation and an anion, such that a PEG bonded to the cation and a PEG bonded to the anion each increases a polarity of the cation and the anion, respectively.

公开(公告)号：US11075079B2

公开(公告)日：2021-07-27

申请号：US16107699

申请日：2018-08-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Chun Huang ,  Ya-Wen Yeh ,  Chien Wen Lai ,  Wei-Liang Lin ,  Ya Hui Chang ,  Yung-Sung Yen ,  Ru-Gun Liu ,  Chin-Hsiang Lin ,  Yu-Tien Shen

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/308 ,  H01L21/266 ,  C23C16/458 ,  C23C16/50 ,  C23C16/04

Abstract: A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.

公开(公告)号：US11029602B2

公开(公告)日：2021-06-08

申请号：US15994615

申请日：2018-05-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Chin-Hsiang Lin ,  Ching-Yu Chang ,  Yahru Cheng

IPC: G03F7/11 ,  G03F7/38 ,  G03F7/004 ,  G03F7/20 ,  G03F7/16

Abstract: A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate, and selectively exposing the photoresist layer to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the protective layer is removed. The protective layer includes a polymer having fluorocarbon pendant groups.