公开(公告)号：US20030210723A1

公开(公告)日：2003-11-13

申请号：US10141862

申请日：2002-05-10

Inventor： David M. Adams ,  Joan E. Haysom ,  Ian Woods

IPC: H01S005/00

CPC classification number: B82Y20/00 ,  H01S5/026 ,  H01S5/12 ,  H01S5/1221 ,  H01S5/1228 ,  H01S5/3413 ,  H01S5/3414 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50

Abstract: An optical device, including a monolithically integrated diode laser and semiconductor optical amplifier, that has reduced linewidth and improved side mode suppression for a given output power target. In a preferred embodiment, the diode laser is detuned from a gain peak wavelength to an emission wavelength. The semiconductor optical amplifier has an active region that is bandgap shifted to move its gain peak towards the emission wavelength of the laser diode, thus reducing its linewidth enhancement factor. The diode laser is preferably either a gain-coupled or index-coupled distributed feedback laser. The bandgap shift can be effected by known bandgap shifting methods, such as ion implantation, dielectric cap disordering, and laser induced disordering.

Abstract translation: 一种包括单片集成二极管激光器和半导体光放大器的光学装置，其对于给定的输出功率目标具有减小的线宽和改进的侧模抑制。 在优选实施例中，二极管激光器从增益峰值波长失谐到发射波长。 半导体光放大器具有带隙移位的有源区域，以将其增益峰值朝向激光二极管的发射波长移动，从而减小其线宽增强因子。 二极管激光器优选地是增益耦合或折射率分布反馈激光器。 带隙偏移可以通过已知的带隙移位方法来实现，例如离子注入，介电帽无序和激光诱导的无序化。

公开(公告)号：US20030072344A1

公开(公告)日：2003-04-17

申请号：US10266893

申请日：2002-10-08

Inventor： Yee Loy Lam ,  Yuen Chuen Chan ,  Teik Kooi Ong ,  Hwi Siong Lim ,  Lay Cheng Choo ,  Peh Wei Tan

IPC: H01S005/00 ,  H01S003/08

CPC classification number: B82Y20/00 ,  H01S5/06256 ,  H01S5/065 ,  H01S5/0654 ,  H01S5/0683 ,  H01S5/0687 ,  H01S5/125 ,  H01S5/3413

Abstract: There is provided a semiconductor laser comprising a gain section and an adjacent Bragg section, wherein output laser light is emitted via a facet at an interface between air and the gain section, the Bragg section comprising a distributed reflecting structure having a length substantially greater than required to ensure single longitudinal mode operation of the laser in which the side-mode suppression ratio (SMSR) is 35 dB or more, thereby in use substantially suppressing optical feedback from a facet at an interface between the Bragg section and air, and wherein an interface between the Bragg section and the gain section is quantum well intermixed, thereby rendering the interface substantially anti-reflecting at the wavelength of the laser.

Abstract translation: 提供了包括增益部分和相邻布拉格部分的半导体激光器，其中输出激光经由空气和增益部分之间的界面处的刻面发射，布拉格部分包括分布反射结构，其长度显着大于所需的长度 为了确保侧模抑制比（SMSR）为35dB以上的激光器的单纵模模式动作，从而基本上抑制了从布拉格部和空气之间的界面的小平面的光反馈，并且其中，界面 在布拉格部分和增益部分之间是量子阱良好的混合，从而使界面在激光波长处基本上反射。

公开(公告)号：US20030043872A1

公开(公告)日：2003-03-06

申请号：US10219093

申请日：2002-08-13

Inventor： Mikihiro Yokozeki ,  Kaname Saito ,  Hirotatsu Ishii ,  Masayuki Iwami

IPC: H01S005/00

CPC classification number: B82Y20/00 ,  H01S3/06766 ,  H01S3/06775 ,  H01S5/0021 ,  H01S5/02284 ,  H01S5/02438 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/146 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/3413 ,  H01S5/34306 ,  H01S2304/04

Abstract: Disclosed are semiconductor laser devices which hardly have degradation when used to generate high power of 200 mW or greater over a long period of time. An exemplary semiconductor laser device comprising a semiconductor substrate, and a layer structure formed on the semiconductor substrate and having an active layer with a quantum well layer formed of a ternary system mixed crystal of a Ill-V compound semiconductor. The material of the quantum well layer is formed in an equilibrium phase which is thermodynamically stable at both the growth temperature and the operating temperature. The material preferably has a substantially homogeneous disordered microstructure. In a preferred embodiment, the material comprises GaAsSb. The quantum well layer exhibits improved thermodynamic stability, and the device can emit light in the 980 nm band at high power levels for longer periods of time without failure in comparison to conventional InGaAs 980 nm pumping lasers.

Abstract translation: 公开了当用于在长时间内产生200mW或更大的大功率时几乎不劣化的半导体激光器件。 一种示例性半导体激光器件，包括半导体衬底和形成在半导体衬底上并具有由III-V族化合物半导体的三元系混合晶形成的量子阱层的有源层的层结构。 量子阱层的材料形成在平衡相，在生长温度和工作温度下都是热力学稳定的。 该材料优选具有基本均匀的无序微结构。 在优选实施例中，该材料包括GaAsSb。 量子阱层表现出改进的热力学稳定性，器件可以在高功率水平下在980nm波段内发射较长时间的光，而与常规的InGaAs 980nm泵浦激光器相比，可以不发生故障。

公开(公告)号：US20020146051A1

公开(公告)日：2002-10-10

申请号：US10114059

申请日：2002-04-03

Applicant: FUJI PHOTO FILM CO., LTD.

Inventor： Toshiaki Kuniyasu ,  Toshiaki Fukunaga

IPC: H01S005/00

CPC classification number: B82Y20/00 ,  H01S5/16 ,  H01S5/3413 ,  H01S5/34386

Abstract: A semiconductor laser device is disclosed that improves reliability during high-power oscillation. On a plane of an n-type GaAs substrate, grown are an n-type GaAs buffer layer, an n-type In0.48Ga0.52P lower cladding layer, an n-type or i-type Inx1Ga1-x1As1-y1Py1 optical waveguide layer, an i-type GaAs1-y2Py2 tensile-strain barrier layer, an Inx3Ga1-x3As1-y3Py3 compressive-strain quantum-well active layer, an i-type GaAs1-y2Py2 tensile-strain barrier layer, a p-type or i-type Inx1Ga1-x1As1-y1Py1 upper optical waveguide layer, a p-type In0.48Ga0.52P first upper cladding layer, a GaAs etching stop layer, a p-type In0.48Ga0.52P second upper cladding layer and a p-type GaAs contact layer. Two ridge trenches are formed on the resultant structure, and current non-injection regions are formed by removing the p-type GaAs contact layer in portions extending inwardly by 30 nullm from cleavage positions of edge facets of the resonator on a top face of a ridge portion between the ridge trenches.

Abstract translation: 公开了一种在高功率振荡期间提高可靠性的半导体激光器件。 在n型GaAs衬底的平面上，生长为n型GaAs缓冲层，n型In0.48Ga0.52P下包层，n型或i型Inx1Ga1-x1As1-y1Py1光波导层 i型GaAs1-y2Py2拉伸应变阻挡层，Inx3Ga1-x3As1-y3Py3压缩应变量子阱有源层，i型GaAs1-y2Py2拉伸应变阻挡层，p型或i型 Inx1Ga1-x1As1-y1Py1上部光波导层，p型In0.48Ga0.52P第一上部包层，GaAs蚀刻停止层，p型In0.48Ga0.52P第二上部包层和p型GaAs接触 层。 在所得结构上形成两个脊沟槽，并且通过从脊的顶面上的谐振器的边缘切口的切割位置向内延伸30微米的部分去除p型GaAs接触层，形成电流的非注入区域 脊沟槽之间的部分。

公开(公告)号：US20020137251A1

公开(公告)日：2002-09-26

申请号：US09788975

申请日：2001-02-20

Inventor： John Haig Marsh ,  Craig James Hamilton ,  Stewart Duncan McDougall ,  Olek Peter Kowalski

IPC: H01L021/00

CPC classification number: B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/3413 ,  H01S5/3414

Abstract: There is disclosed an improved method of manufacturing of an optical device (40), particularly semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and optical detectors. The invention provides a method of manufacturing optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well (QW) structure (30), the method including the step of: processing the device body portion (15) so as to create extended defects at least in a portion (53) of the device portion (5). Each extended defect is a structural defect comprising a plurality of adjacent nullpointnull defects.

Abstract translation: 公开了一种改进的光学器件（40）的制造方法，特别是诸如激光二极管，光调制器，光放大器，光开关和光检测器之类的半导体光电器件。 本发明提供一种制造光学装置（40）的方法，装置主体部分（15），由该装置（40）构成包括量子阱（QW）结构（30）的装置（40），该方法包括以下步骤： 处理所述装置主体部分（15）以至少在所述装置部分（5）的一部分（53）中产生延伸的缺陷。 每个延伸的缺陷是包括多个相邻“点”缺陷的结构缺陷。

公开(公告)号：US20020003918A1

公开(公告)日：2002-01-10

申请号：US09802071

申请日：2001-03-08

Inventor： Boon Siew Ooi ,  Yee Loy Lam ,  Yuen Chuen Chan ,  Yan Zhou ,  Siu Chung Tam

IPC: G02B006/13

CPC classification number: B82Y20/00 ,  G02B2006/12128 ,  H01L21/182 ,  H01S5/026 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/3413 ,  H01S5/3414

Abstract: The present invention provides a novel technique based on gray scale mask patterning (110), which requires only a single lithography and etching step (110, 120) to produce different thickness of SiO2 implantation mask (13) in selected regions followed by a one step IID (130) to achieve selective area intermixing. This novel, low cost, and simple technique can be applied for the fabrication of PICs in general, and WDM sources in particular. By applying a gray scale mask technique in IID in accordance with the present invention, the bandgap energy of a QW material can be tuned to different degrees across a wafer (14). This enables not only the integration of monolithic multiple-wavelength lasers but further extends to integrate with modulators and couplers on a single chip. This technique can also be applied to ease the fabrication and design process of superluminescent diodes (SLDs) by expanding the gain spectrum to a maximum after epitaxial growth.

Abstract translation: 本发明提供了一种基于灰度掩模图案化（110）的新技术，其仅需要单个光刻和蚀刻步骤（110,120），以在所选区域中产生不同厚度的SiO 2注入掩模（13），随后是一步 IID（130）实现选择性区域混合。 这种新颖，低成本和简单的技术可以应用于一般的PIC的制造，特别是WDM源。 通过根据本发明在IID中应用灰度掩模技术，可以跨越晶片（14）将QW材料的带隙能量调节到不同的程度。 这不仅可以实现单片多波长激光器的集成，而且还可以在单​​个芯片上进一步扩展到与调制器和耦合器集成。 该技术也可以用于通过在外延生长之后将增益谱扩展到最大值来简化超发光二极管（SLD）的制造和设计过程。

公开(公告)号：US6027989A

公开(公告)日：2000-02-22

申请号：US894725

申请日：1997-10-28

Applicant: Philip J. Poole ,  Sylvain Charbonneau ,  Geofrey C. Aers ,  Michael Davies ,  Emil S. Koteles

Inventor： Philip J. Poole ,  Sylvain Charbonneau ,  Geofrey C. Aers ,  Michael Davies ,  Emil S. Koteles

IPC: H01L21/18 ,  H01L21/266 ,  H01L33/06 ,  H01S5/026 ,  H01S5/16 ,  H01S5/20 ,  H01S5/34 ,  H01S5/40 ,  H01L21/22

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L21/182 ,  H01L21/266 ,  H01S5/34 ,  H01S5/0265 ,  H01S5/162 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/3413 ,  H01S5/4031 ,  H01S5/4087

Abstract: In a method of bandgap tuning of a quantum well heterostructure wherein ions are implanted in the heterostructure by ion implantation, the ions are implanted so that different regions are implanted in such a way as to create different concentrations of defects. This provides varying bandgap energies to various areas of the heterostructure during a subsequent thermal treatment, which removes residual defects and initiates intermixing in the quantum well region to result in a structure having a selectively shifted bandgap.

Abstract translation: PCT No.PCT / CA96 / 00121 Sec。 371日期1997年10月28日第 102（e）日期1997年10月28日PCT提交1996年2月28日PCT公布。 出版物WO96 / 27226 日期1996年9月6日在通过离子注入将离子注入到异质结构中的量子阱异质结构的带隙调谐方法中，注入离子，使得不同的区域被注入以产生不同浓度的缺陷。 这在随后的热处理期间为异质结构的各个区域提供不同的带隙能量，这消除了残余缺陷并且引发量子阱区域中的混合，从而导致具有选择性移位带隙的结构。

公开(公告)号：US5878066A

公开(公告)日：1999-03-02

申请号：US904448

申请日：1997-07-31

Applicant: Natsuhiko Mizutani ,  Hajime Sakata ,  Yukio Furukawa

Inventor： Natsuhiko Mizutani ,  Hajime Sakata ,  Yukio Furukawa

IPC: H01S5/062 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S5/50 ,  H01S3/10

CPC classification number: B82Y20/00 ,  H01S5/0625 ,  H01S5/12 ,  H01S2301/14 ,  H01S5/06203 ,  H01S5/06236 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/124 ,  H01S5/204 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/3404 ,  H01S5/3413 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/5009 ,  H01S5/5018

Abstract: An optical semiconductor apparatus includes at least two semiconductor laser portions each having a light waveguide with an active layer and a distributed reflector, and a stimulating unit for independently stimulating the active layers of the light waveguides. The semiconductor laser portions are serially arranged in a light propagation direction. The light waveguides are constructed such that a difference between propagation constants for two different polarization modes in one of the waveguides is different from a difference between propagation constants for the two different polarization modes in the other of the waveguides. When one of injection of a modulation current signal into or application of a modulation voltage to the optical semiconductor apparatus, an oscillation state can be switched between a state in which Bragg wavelengths for one of the two different polarization modes coincide with each other between the light waveguides and a state in which Bragg wavelengths for the other of the two different polarization modes coincide with each other between the light waveguides.

Abstract translation: 光学半导体装置包括至少两个半导体激光器部分，每个半导体激光器部分具有有源层的光波导和分布反射器，以及用于独立地激发光波导的有源层的刺激单元。 半导体激光器部分沿光传播方向串联布置。 光波导被构造成使得波导中的一个中的两个不同偏振模式的传播常数之间的差异不同于另一个波导中两种不同偏振模式的传播常数之差。 当将调制电流信号注入或向光半导体装置施加调制电压中的一个时，可以在两个不同偏振模式中的一个的布拉格波长在光之间彼此重合的状态之间切换振荡状态 波导和两个不同偏振模式中的另一个的布拉格波长在光波导之间彼此重合的状态。

公开(公告)号：US5843802A

公开(公告)日：1998-12-01

申请号：US923092

申请日：1997-09-04

Applicant: Kevin J. Beernink ,  Robert L. Thornton ,  David P. Bour ,  Thomas L. Paoli ,  Jack Walker

Inventor： Kevin J. Beernink ,  Robert L. Thornton ,  David P. Bour ,  Thomas L. Paoli ,  Jack Walker

IPC: H01S5/00 ,  H01L21/18 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40 ,  H01S3/18 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01L21/182 ,  H01S5/34 ,  H01S5/4043 ,  H01S5/3413 ,  H01S5/3414 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/4087

Abstract: A method for fabricating a multiple layer semiconductor device, such as a laser, using impurity-induced, or vacancy-enhanced, intermixing of semiconductor layers to selectively inactivate quantum well regions in the device.

Abstract translation: 一种用于制造诸如激光器的多层半导体器件的方法，其使用杂质诱导或空穴增强的半导体层的混合来选择性地使器件中的量子阱区域失活。

公开(公告)号：US5745517A

公开(公告)日：1998-04-28

申请号：US581691

申请日：1995-12-29

Applicant: David P. Bour ,  Robert L. Thornton ,  Kevin J. Beernink

Inventor： David P. Bour ,  Robert L. Thornton ,  Kevin J. Beernink

IPC: H01S5/042 ,  H01S5/20 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01L29/167

CPC classification number: B82Y20/00 ,  H01S5/20 ,  H01S5/0422 ,  H01S5/2059 ,  H01S5/3054 ,  H01S5/3413 ,  H01S5/34326

Abstract: The polarity of the semiconductor layers in an AlGaInP semiconductor laser fabricated by impurity induced layer disordering (IILD) is reversed to allow n-doping. Thus, the cladding and confinement layers between the substrate and the active layer will have p-type conductivity. The upper confinement, cladding, and contact layers can be either n or p-type conductivity with n-diffused regions formed by IILD extending down from the contact layer to the lower cladding layer. The electrodes can include either a substrate electrode or a lateral electrode.

Abstract translation: 通过杂质诱导层失调（IILD）制造的AlGaInP半导体激光器中的半导体层的极性被反转以允许n掺杂。 因此，衬底和有源层之间的包层和限制层将具有p型导电性。 上约束，包层和接触层可以是n或p型导电性，其中由扩散区域形成的n扩散区域从接触层向下延伸到下包层。 电极可以包括基底电极或横向电极。