公开(公告)号：US20090302214A1

公开(公告)日：2009-12-10

申请号：US12476836

申请日：2009-06-02

申请人： Tetsuya Igo ,  Takatoshi Yamashita ,  Tadashi Ikejiri

发明人： Tetsuya Igo ,  Takatoshi Yamashita ,  Tadashi Ikejiri

IPC分类号： B01D59/44 ,  H01J49/00 ,  A61N5/00 ,  G01K1/08

CPC分类号： H01J37/3171 ,  H01J37/1471 ,  H01J2237/055 ,  H01J2237/08 ,  H01J2237/1501 ,  H01J2237/2446 ,  H01J2237/24528 ,  H01J2237/304

摘要： An extraction electrode of an ion source is dividedly configured by a first extraction electrode and a second extraction electrode. DC power supplies which form a potential difference between the electrodes, a camera which takes an image of the ion beam to output image data of the ion beam, and a rear-stage beam instrument which measures the beam current of the ion beam that has passed through the analysis slit are disposed. A step of adjusting an analysis electromagnet current so that the beam current measured by the rear-stage beam instrument is maximum, that of processing the image data from the camera to obtain the deviation angle of the ion beam entering the analysis slit from the design beam orbit, and that of, if the deviation angle is not within an allowable range, adjusting the potential difference between the electrodes so that the ion beam is bent to a direction where the deviation angle becomes small, by the potential difference are performed one or more times until the deviation angle is within the allowable range.

摘要翻译： 离子源的提取电极由第一引出电极和第二引出电极分开地构成。 形成电极之间的电位差的直流电源，拍摄离子束的图像以输出离子束的图像数据的照相机，以及测量已经通过的离子束的束电流的后级光束仪器 通过分析缝设置。 调整分析电磁体电流使得由后级光束仪测得的光束电流最大的步骤是从相机处理图像数据以获得进入分析狭缝的离子束与设计光束的偏离角度的步骤 并且如果偏离角不在允许范围内，则调整电极之间的电位差使得离子束弯曲到偏移角变小的方向，通过电位差进行一个或多个 次，直到偏离角度在允许范围内。

公开(公告)号：US20090196717A1

公开(公告)日：2009-08-06

申请号：US12361582

申请日：2009-01-29

申请人： Scott C. Holden

发明人： Scott C. Holden

IPC分类号： H01L21/677 ,  B25J9/16 ,  B25J13/00 ,  B25J19/02

CPC分类号： H01L21/67259 ,  H01J37/20 ,  H01J37/3171 ,  H01J37/32743 ,  H01J2237/20207 ,  H01J2237/20292 ,  H01J2237/204 ,  H01J2237/24528 ,  H01J2237/2482 ,  H01L21/68742

摘要： An apparatus and method of handling substrates is disclosed. A detecting system, capable of determining whether a substrate is tilted in relation to the platen, is positioned proximate to the substrate. In some embodiments, the detecting system is a distance measuring system. In other embodiments, it is an angle sensor. The detecting system is in communication with a controller, which, in turn, is in communication with a substrate handling robot. If, based on information received from the detecting system, the controller determines that the substrate is tilted beyond an acceptable range, it is assumed that the substrate has remained attached to the platen. In such a case, the substrate handling robot does not attempt to remove it from the platen. In this way, the substrate is not damaged.

摘要翻译： 公开了一种处理衬底的装置和方法。 能够确定衬底相对于压板倾斜的检测系统位于靠近衬底的位置。 在一些实施例中，检测系统是距离测量系统。 在其它实施例中，它是角度传感器。 检测系统与控制器通信，控制器又与衬底处理机器人连通。 如果基于从检测系统接收的信息，控制器确定衬底倾斜超过可接受的范围，则假设衬底保持附着在压板上。 在这种情况下，基板处理机器人不会试图将其从压板上移除。 这样就不会损坏基板。

公开(公告)号：US20090121122A1

公开(公告)日：2009-05-14

申请号：US11939173

申请日：2007-11-13

申请人： Peter L. Kellerman ,  Kenneth Purser ,  Svetlana Radovanov ,  Victor M. Benveniste ,  Frank Sinclair ,  John Slocum

发明人： Peter L. Kellerman ,  Kenneth Purser ,  Svetlana Radovanov ,  Victor M. Benveniste ,  Frank Sinclair ,  John Slocum

IPC分类号： H01J37/08 ,  G01D18/00

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30472 ,  H01J2237/31703

摘要： Techniques for measuring and controlling ion beam angle and density uniformity are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring and controlling ion beam angle and density uniformity. The apparatus may include a measuring assembly having an opening, a cup, and at least one collector at the rear of the cup. The apparatus may further include an actuator to move the measuring assembly along an actuation path to scan an ion beam to measure and control ion beam uniformity.

摘要翻译： 公开了用于测量和控制离子束角度和密度均匀性的技术。 在一个特定的示例性实施例中，技术可以被实现为用于测量和控制离子束角度和密度均匀性的装置。 该装置可以包括具有开口，杯子和在杯后部的至少一个收集器的测量组件。 该装置还可以包括致动器，以沿着致动路径移动测量组件以扫描离子束以测量和控制离子束均匀性。

公开(公告)号：US20080078954A1

公开(公告)日：2008-04-03

申请号：US11540064

申请日：2006-09-29

申请人： Bo H. Vanderberg ,  Patrick Splinter

发明人： Bo H. Vanderberg ,  Patrick Splinter

IPC分类号： H01J37/317

CPC分类号： H01J37/1471 ,  H01J37/04 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0475 ,  H01J2237/055 ,  H01J2237/1501 ,  H01J2237/152 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/3045 ,  H01J2237/31703

摘要： A parallelizing component of an ion implantation system comprises two angled dipole magnets that mirror one another and serve to bend an ion beam traversing therethrough to have a substantially “s” shape. This s bend serves to filter out contaminants of the beam, while the dipoles also parallelize the beam to facilitate uniform implant properties across the wafer, such as implant angle, for example. Additionally, a deceleration stage is included toward the end of the implantation system so that the energy of the beam can be kept relatively high throughout the beamline to mitigate beam blowup.

摘要翻译： 离子注入系统的平行化部件包括两个成角度的偶极子磁体，其彼此相互反射并用于弯曲横穿其中的离子束以具有基本上“s”的形状。 该弯曲用于滤除光束的污染物，而偶极子也使光束平行化，以促进跨晶片的均匀植入性能，例如植入角度。 此外，朝向植入系统的端部包括减速阶段，使得束的能量可以在整个束线中保持相对较高以减轻束的膨胀。

公开(公告)号：US20080061228A1

公开(公告)日：2008-03-13

申请号：US11716622

申请日：2007-03-09

申请人： Bo H. Vanderberg ,  Edward C. Eisner

发明人： Bo H. Vanderberg ,  Edward C. Eisner

IPC分类号： G21K1/093

CPC分类号： H01J37/3171 ,  H01J37/1471 ,  H01J37/1472 ,  H01J2237/24528

摘要： An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.

公开(公告)号：US20060208203A1

公开(公告)日：2006-09-21

申请号：US11146064

申请日：2005-06-07

申请人： Atul Gupta ,  Joseph Olson

发明人： Atul Gupta ,  Joseph Olson

IPC分类号： H01J37/302 ,  H01J37/317

CPC分类号： H01L21/26586 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24528 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01L29/66803 ,  H01L29/785

摘要： A technique for ion beam angle process control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle process control in an ion implanter system. The method may comprise directing one or more ion beams at a substrate surface. The method may also comprise determining an average spread of incident angles at which the one or more ion beams strike the substrate surface. The method may further comprise adjusting the one or more ion beams based at least in part on the average spread of incident angles to produce a desired spread of ion beam incident angles.

摘要翻译： 公开了一种用于离子束角过程控制的技术。 在一个特定的示例性实施例中，该技术可以被实现为离子注入机系统中的离子束角度过程控制的方法。 该方法可以包括在衬底表面处引导一个或多个离子束。 该方法还可以包括确定一个或多个离子束撞击衬底表面的入射角的平均扩展。 该方法还可以包括至少部分地基于入射角的平均扩展来调整一个或多个离子束，以产生期望的离子束入射角的扩展。

公开(公告)号：US20050211924A1

公开(公告)日：2005-09-29

申请号：US10950633

申请日：2004-09-28

申请人： Takeshi Shibata ,  Hiroshi Hashimoto ,  Tadahiko Hirakawa ,  Kazuhiko Tonari

发明人： Takeshi Shibata ,  Hiroshi Hashimoto ,  Tadahiko Hirakawa ,  Kazuhiko Tonari

IPC分类号： C23C14/48 ,  H01J37/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30455 ,  H01J2237/31703

摘要： An ion implantation apparatus includes an ion irradiation unit. The ion irradiation unit irradiates a plurality of areas of a target substrate with ion beams each of which reaches the substrate at corresponding one incident angle. An incident angle measuring instrument measures the incident angle of each of the ion beams. A controller is provided with information from the incident angle measuring instrument and controls the ion irradiation unit in accordance with the information so that a difference among incident angles is set to within ±0.1°.

摘要翻译： 离子注入装置包括离子照射单元。 离子照射单元以对应的一个入射角度向基板的离子束照射目标基板的多个区域。 入射角测量仪测量每个离子束的入射角。 向控制器提供来自入射角度测量仪器的信息，并根据该信息控制离子照射单元，使得入射角之间的差设定在±0.1°以内。

公开(公告)号：US20040065849A1

公开(公告)日：2004-04-08

申请号：US10263132

申请日：2002-10-02

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Grant Kenji Larsen

IPC分类号： H01J037/304

CPC分类号： H01J37/304 ,  H01J37/3171 ,  H01J2237/24528 ,  H01J2237/30433

摘要： A method of determining beam twist and/or calibrating tilt angles of an ion beam of an ion beam implanter relative to a first channel of a crystalline target. The method can be used to calibrate the machine to an accuracy which is comparable to the precision of variance of such angle. The method includes the steps of: a) providing reference data defining a known relationship between the beam tilt and twist angles and beam channeling in at least one preselected second channel of the crystalline target, at least some of the data providing first and second reference tilt angles at which channeling occurs for a given twist angle, the first and second tilt angles being different, b) without varying the twist angle, measuring channeling severity around a range of estimated tilt angles surrounding each of said first and second reference tilt angles and determining from the measurements a point of maximum channeling severity within each range; and c) comparing the determined points to the reference data to determine the twist angle and/or calibrate the tilt angle.

摘要翻译： 确定离子束注入机离子束相对于晶体靶的第一通道的束扭转和/或校准倾斜角的方法。 该方法可用于校准机器的精度，该准确度与该角度的方差精度相当。 该方法包括以下步骤：a）提供参考数据，该参考数据定义在晶体目标的至少一个预选的第二通道中的束倾斜和扭转角度与射束通道之间的已知关系，提供第一和第二参考倾斜的数据中的至少一些 在给定的扭转角度下发生通道的角度，第一和第二倾斜角度不同，b）在不改变扭转角的情况下，测量围绕所述第一和第二参考倾斜角度周围的估计倾斜角的范围内的通道严重度，并且确定 从测量值在每个范围内的最大通道严重性的点; 以及c）将确定的点与参考数据进行比较以确定扭转角和/或校准倾斜角。

公开(公告)号：US06573518B1

公开(公告)日：2003-06-03

申请号：US09699653

申请日：2000-10-30

申请人： Anthony Renau ,  Joseph C. Olson

发明人： Anthony Renau ,  Joseph C. Olson

IPC分类号： H01J37317

CPC分类号： H01J37/3171 ,  H01J2237/24528 ,  H01J2237/24542

摘要： A method for implanting ions into a workpiece, such as a semiconductor wafer, includes the steps of generating an ion beam, measuring an angle of non-parallelism of the ion beam, tilting the wafer at a first angle, performing a first implant at the first angle, tilting the wafer at a second angle, and performing a second implant at the second angle. The first and second angles are opposite in sign with respect to a reference direction and in magnitude are equal to or greater than the measured angle of non-parallelism. Preferably, the first and second implants are controlled to provide substantially equal ion doses in the workpiece.

摘要翻译： 用于将离子注入到诸如半导体晶片的工件中的方法包括以下步骤：产生离子束，测量离子束的非平行度的角度，以第一角度倾斜晶片，在 第一角度，以第二角度倾斜晶片，并且以第二角度执行第二植入。 第一和第二角度相对于参考方向的符号相反，并且幅度等于或大于所测量的非平行度的角度。 优选地，控制第一和第二植入物以在工件中提供基本相等的离子剂量。

公开(公告)号：US20230317399A1

公开(公告)日：2023-10-05

申请号：US18128405

申请日：2023-03-30

申请人： Hitachi High-Tech Corporation

发明人： Toshimasa KAMEDA ,  Tomoyo SASAKI ,  Shunsuke MIZUTANI

IPC分类号： H01J37/04

CPC分类号： H01J37/045 ,  H01J2237/24528

摘要： The invention is directed to suppress charge of a region of interest or damage in the region of interest caused by blanking. A charged particle beam device includes: a deflector configured to scan a region of interest with a beam emitted from a beam source; a second deflector configured to retract the beam to outside of the region of interest after scanning the region of interest with the beam; and one or more computer systems including one or more processors configured to execute a program stored in a storage medium, in which the one or more computer systems determine a retraction direction or a retraction position of the beam (Step S402) based on a scanning direction of the beam in the region.