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    Techniques for temperature-controlled ion implantation
    1.
    发明授权
    Techniques for temperature-controlled ion implantation 有权
    温度控制离子注入技术

    公开(公告)号：US07655933B2

    公开(公告)日：2010-02-02

    申请号：US11778335

    申请日：2007-07-16

    Applicant: Jonathan Gerald England ,  Richard Stephen Muka ,  Scott C Holden

    Inventor： Jonathan Gerald England ,  Richard Stephen Muka ,  Scott C Holden

    IPC: H01J37/317

    CPC classification number: H01J37/20 ,  H01J2237/2001 ,  H01J2237/2065 ,  H01J2237/31701 ,  H01J2237/336 ,  H01L21/67109 ,  H01L21/67213

    Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.

    Abstract translation: 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于高温离子注入的装置。 该装置可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板具有晶片界面以在晶片和压板之间提供预定的热接触。 该装置还可以包括加热元件的阵列，以将晶片保持在压板上，以在离子注入期间在晶片上实现预定的温度分布，加热元件在压板外部。 该装置还可以包括植入物后冷却台，以在晶片的离子注入之后冷却晶片。

    Method for optimum conductive heat transfer with a thin flexible workpiece
    2.
    发明授权
    Method for optimum conductive heat transfer with a thin flexible workpiece 失效
    使用薄柔性工件实现最佳导电传热的方法

    公开(公告)号：US4537244A

    公开(公告)日：1985-08-27

    申请号：US585743

    申请日：1984-03-02

    Applicant: Scott C. Holden

    Inventor： Scott C. Holden

    IPC: H01J37/20 ,  H01J37/317 ,  H01L21/673 ,  F28F9/00

    CPC classification number: H01L21/68721 ,  H01J37/20 ,  H01J37/317

    Abstract: Conductive heat transfer between a thin deformable workpiece and heat sink is optimized by imposing a load over the workpiece resulting in a uniform contact pressure distribution in said workpiece which is also the maximum stress consistent with the elastic properties of the workpiece. The surface of the heat sink is given a contour determined by these criteria for a thin circular disk clamped thereto.

    Abstract translation: 在薄的可变形工件和散热器之间的导电传热通过在工件上施加负载而得到优化，导致所述工件中的均匀的接触压力分布，其也是与工件的弹性性质一致的最大应力。 散热器的表面被给予由这些标准确定的轮廓，用于夹紧在其上的薄圆盘。

    Air lock vacuum pumping methods and apparatus
    3.
    发明授权
    Air lock vacuum pumping methods and apparatus 失效
    空气锁真空泵的方法和装置

    公开(公告)号：US4504194A

    公开(公告)日：1985-03-12

    申请号：US381289

    申请日：1982-05-24

    Applicant: Scott C. Holden

    Inventor： Scott C. Holden

    IPC: B25B11/00 ,  C23C14/00 ,  C23C14/22 ,  C23C14/24 ,  C23C14/48 ,  C23C14/56 ,  H01J37/18 ,  H01L21/265 ,  H01L21/677 ,  F04B37/14

    CPC classification number: C23C14/566 ,  H01J37/18 ,  Y10T137/86187

    Abstract: Method and apparatus for high speed vacuum pumping of an air lock. A vacuum pumped expansion tank having a volume larger than the volume of the air lock is coupled through a valve to the air lock. When evacuation of the air lock is desired, the valve is opened for a brief duration and the gas in the air lock rapidly expands into the expansion tank. Multiple pumping stages, each including a vacuum pumped expansion tank coupled through a valve to the air lock, can be utilized to decrease the final pressure in the air lock. The valves are sequentially opened to permit sequential expansion of the gas in the air lock into the expansion tanks. Multiple air locks can time share the same pumping system.

    Abstract translation: 用于高速真空泵送气锁的方法和装置。 具有比空气锁的体积大的体积的真空泵送膨胀箱通过阀与气锁联接。 当需要抽空气锁时，阀打开一段持续时间，气锁中的气体迅速膨胀到膨胀箱中。 可以利用多个泵送级，每个泵级包括通过阀连接到气锁的真空泵送膨胀罐，以减小气锁中的最终压力。 顺序地打开阀，以允许将气锁中的气体顺序膨胀到膨胀罐中。 多个气闸可以共享同一个泵系统。

    TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION
    5.
    发明申请
    TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 有权
    温度控制离子植入技术

    公开(公告)号：US20080042078A1

    公开(公告)日：2008-02-21

    申请号：US11778335

    申请日：2007-07-16

    Applicant: Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Scott C. Holden

    Inventor： Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Scott C. Holden

    IPC: H01J37/08

    CPC classification number: H01J37/20 ,  H01J2237/2001 ,  H01J2237/2065 ,  H01J2237/31701 ,  H01J2237/336 ,  H01L21/67109 ,  H01L21/67213

    Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.

    Abstract translation: 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于高温离子注入的装置。 该装置可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板具有晶片界面以在晶片和压板之间提供预定的热接触。 该装置还可以包括加热元件的阵列，以将晶片保持在压板上，以在离子注入期间在晶片上实现预定的温度分布，加热元件在压板外部。 该装置还可以包括植入物后冷却台，以在晶片的离子注入之后冷却晶片。

    Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer
    7.
    发明授权
    Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer 失效
    用半导体晶片进行气体辅助热传递的方法和装置

    公开(公告)号：US4542298A

    公开(公告)日：1985-09-17

    申请号：US502812

    申请日：1983-06-09

    Applicant: Scott C. Holden

    Inventor： Scott C. Holden

    IPC: H01J37/18 ,  H01L21/683 ,  G01N21/00

    CPC classification number: H01J37/18 ,  H01L21/6838

    Abstract: Methods and apparatus for differential pumping of a thermal transfer gas used to transfer thermal energy between a semiconductor wafer and a platen during processing in a vacuum chamber. Housing structure defines an intermediate region adjacent to and surrounding the platen. The gas, which is introduced into a thermal transfer region behind the wafer, is restricted from flowing into the intermediate region by intimate contact between the wafer and the platen. A clamping ring, which clamps the wafer to the platen, and a bellows coupled between the clamping ring and the housing restrict flow of gas from the intermediate region to the vacuum chamber. The intermediate region is vacuum pumped to a pressure lower than the pressure in the thermal transfer region whereby leakage of the gas into the vacuum chamber is reduced.

    Abstract translation: 用于在真空室中处理期间用于在半导体晶片和压板之间传递热能的热传递气体的差分泵浦的方法和装置。 壳体结构限定了邻近并围绕压板的中间区域。 通过晶片和压板之间的紧密接触，被引入到晶片后面的热传递区域中的气体被限制流入中间区域。 将晶片夹紧到压板的夹紧环和耦合在夹紧环和壳体之间的波纹管限制气体从中间区域流到真空室。 中间区域被真空泵送到低于热传递区域中的压力的​​压力，从而减少了进入真空室的气体泄漏。

    Rapid pumpdown for high vacuum processing
    8.
    发明授权
    Rapid pumpdown for high vacuum processing 失效
    快速抽吸高真空处理

    公开(公告)号：US4475045A

    公开(公告)日：1984-10-02

    申请号：US520765

    申请日：1983-08-08

    Applicant: Scott C. Holden ,  Norman L. Turner

    Inventor： Scott C. Holden ,  Norman L. Turner

    IPC: H01J37/18 ,  H01J37/317 ,  H01J5/02 ,  H01J7/16 ,  H01J7/26

    CPC classification number: H01J37/3171 ,  H01J37/18

    Abstract: Articles for irradiation are introduced from atmospheric pressure through a vacuum lock to a high vacuum environment for processing. The maintenance of low operating pressures while water vapor is released from the surfaces of the lock and the article is principally achieved by a separate pumping device operating in the high vacuum enclosure, which device preferably takes the form of a large cryo-panel. The cryo-panel can be electrically isolated from ground to provide a charge collection surface within a Faraday cage for ion implantation processing of the article.

    Abstract translation: 用于照射的制品通过真空锁从大气压引入高真空环境进行处理。 当水蒸汽从锁和制品的表面释放时，维持低操作压力主要通过在高真空外壳中操作的单独的泵送装置实现，该装置优选地采用大型冷冻面板的形式。 冷冻面板可以与地面电隔离，以在法拉第笼内提供电荷收集表面，用于制品的离子注入处理。

    Wafer sensing and clamping monitor
    9.
    发明授权
    Wafer sensing and clamping monitor 失效
    晶圆感测和夹紧监视器

    公开(公告)号：US5436790A

    公开(公告)日：1995-07-25

    申请号：US005030

    申请日：1993-01-15

    Applicant: Julian G. Blake ,  Weilin Tu ,  Dale K. Stone ,  Scott C. Holden

    Inventor： Julian G. Blake ,  Weilin Tu ,  Dale K. Stone ,  Scott C. Holden

    IPC: B23Q3/15 ,  G01R27/26 ,  H01L21/265 ,  H01L21/683 ,  H02N13/00

    CPC classification number: H01L21/67259 ,  H01L21/6831

    Abstract: A wafer position and clamp sensor. A circuit monitors capacitance between two electrodes within a wafer support. With no wafer on the support, the capacitance falls in one range, with the wafer in place but not clamped, the capacitance falls in a second range and with the wafer held in place by an electrostatic attraction the capacitance falls in a third range. The sensed capacitance is converted to a frequency and then a DC voltage level that can easily be sensed and used to confirm wafer placement and then confirm wafer clamping.

    Abstract translation: 晶圆位置和钳位传感器。 电路监测晶片支架内的两个电极之间的电容。 在支撑体上没有晶片的情况下，电容落在一个范围内，晶片就位，但没有被夹紧，电容下降到第二范围，并且晶片通过静电吸引保持在适当的位置，电容落在第三范围内。 感测到的电容被转换成一个频率，然后转换成一个直流电压电平，可以很容易地被感测并用于确认晶片放置，然后确认晶片钳位。

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