Abstract:
In accordance with an embodiment of the invention, there is provided an electrostatic chuck. The electrostatic chuck comprises an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck, the surface layer including a charge control layer comprising a surface resistivity of greater than about 1011 ohms per square.
Abstract:
Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a ground pin that extends two regions of a platen that support the substrate. The ground pin may comprise a pin body; and a sleeve comprising an upper portion, a side portion, and a lower portion, the sleeve being configured to fit around the pin body, the sleeve including a fluid channel configured to transport fluid between the upper portion and the lower portion of the sleeve.
Abstract:
An embossed platen to control charge accumulation includes a dielectric layer, a plurality of embossments on a surface of the dielectric layer to support a workpiece, each of a first plurality of the plurality of embossments having a conductive portion to contact a backside of the workpiece when the workpiece is in a clamped position, and a conductor to electrically couple the conductive portion of the first plurality of embossments to ground. An ion implanter having such an embossed platen is also provided.
Abstract:
An electrostatic chuck includes a layer having a plurality of protrusions to support a workpiece, wherein at least a portion of the layer has a first plurality of the plurality of protrusions. The first plurality of protrusions is spaced to geometrically form a pattern of hexagons. The first plurality of protrusions may be spaced an equal distance from adjacent protrusions and the equal distance may be about 4.0 millimeters from a center of one protrusion to a center of another protrusion. The present disclosure reduces peak mechanical stress levels conventionally present along an edge of each protrusion. Reducing such mechanical stress levels helps reduce backside damage to a supported workpiece, which in turn can reduce the generation of unwanted particles caused by such damage.
Abstract:
An ion beam implanter includes ion beam forming and directing apparatus and an implantation station where workpieces are implanted with ions from an ion beam. The beam travels along an evacuated path from an ion source to the implantation station. A flexible bellows couples the implantation station to the beam forming and directing apparatus permitting the implantation station to be pivoted with respect to the beam forming and directing apparatus and thereby change an implantation orientation of the workpieces with respect to the ion beam. A replaceable, flexible bellows liner is disposed within an interior region of the bellows to reduce the volume of implantation byproducts deposited on an interior surface of the bellows.
Abstract:
A method of capturing and removing contaminant particles moving within an evacuated interior region of an ion beam implanter is disclosed. The steps of the method include: providing a particle collector having a surface to which contaminant particles readily adhere; securing the particle collector to the implanter such that particle adhering surface is in fluid communication to the contaminant particles moving within the interior region; and removing the particle collector from the implanter after a predetermined period of time. An ion implanter in combination with a particle collector for trapping and removing contaminant particles moving in an evacuated interior region of the implanter traversed by an ion beam is also disclosed, the particle collector including a surface to which the contaminant particles readily adhere and securement means for releasably securing the particle collector to the implanter such that the particle adhering surface is in fluid communication with the evacuated interior region of the implanter.
Abstract:
In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising a conductive path covering at least a portion of a workpiece-contacting surface of a gas seal ring of the electrostatic chuck, the conductive path comprising at least a portion of an electrical path to ground; and a main field area of a workpiece-contacting surface of the electrostatic chuck comprising a surface resistivity in the range of from about 108 to about 1012 ohms per square.
Abstract:
An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.
Abstract:
Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.
Abstract:
A wafer position and clamp sensor. A circuit monitors capacitance between two electrodes within a wafer support. With no wafer on the support, the capacitance falls in one range, with the wafer in place but not clamped, the capacitance falls in a second range and with the wafer held in place by an electrostatic attraction the capacitance falls in a third range. The sensed capacitance is converted to a frequency and then a DC voltage level that can easily be sensed and used to confirm wafer placement and then confirm wafer clamping.