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1.发明授权Ion implanter having combined hybrid and double mechanical scan architecture 有权离子注入机具有组合的混合和双机械扫描架构公开(公告)号：US08124947B2
公开(公告)日：2012-02-28
申请号：US12554277
申请日：2009-09-04
IPC分类号： H01J37/317 , H01J29/51 , G21K1/08
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488 , H01J2237/31703 , H01J2237/31706
摘要： A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.
摘要翻译： 提供了一种用于在多个工作范围内将离子注入工件的系统和方法。 提供所需的离子剂量，并且由离子源形成点离子束，并通过质量分析器进行质量分析。 基于所需的离子剂量，将离子以第一模式和第二模式中的一种注入到工件中，其中在第一模式中，离子束由位于质量分析器下游的束扫描系统扫描，并由 位于光束扫描系统下游的并联器。 在第一模式中，工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。 在第二模式中，离子束通过光束扫描系统，并行扫描未扫描，工件通过点离子束二维扫描。
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公开(公告)号：US07507978B2
公开(公告)日：2009-03-24
申请号：US11540064
申请日：2006-09-29
申请人： Bo H. Vanderberg , Patrick Splinter
发明人： Bo H. Vanderberg , Patrick Splinter
IPC分类号： G21K1/093 , H01J37/08 , H01J37/317
CPC分类号： H01J37/1471 , H01J37/04 , H01J37/304 , H01J37/3171 , H01J2237/0475 , H01J2237/055 , H01J2237/1501 , H01J2237/152 , H01J2237/24507 , H01J2237/24528 , H01J2237/3045 , H01J2237/31703
摘要： A parallelizing component of an ion implantation system comprises two angled dipole magnets that mirror one another and serve to bend an ion beam traversing therethrough to have a substantially “s” shape. This s bend serves to filter out contaminants of the beam, while the dipoles also parallelize the beam to facilitate uniform implant properties across the wafer, such as implant angle, for example. Additionally, a deceleration stage is included toward the end of the implantation system so that the energy of the beam can be kept relatively high throughout the beamline to mitigate beam blowup.
摘要翻译： 离子注入系统的平行化部件包括两个成角度的偶极子磁体，其彼此相互反射并用于弯曲横穿其中的离子束以具有基本上“s”的形状。 该弯曲用于滤除光束的污染物，而偶极子也使光束平行化，以促进跨晶片的均匀植入性能，例如植入角度。 此外，朝向植入系统的端部包括减速阶段，使得束的能量可以在整个束线中保持相对较高以减轻束的膨胀。
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公开(公告)号：US20080078954A1
公开(公告)日：2008-04-03
申请号：US11540064
申请日：2006-09-29
申请人： Bo H. Vanderberg , Patrick Splinter
发明人： Bo H. Vanderberg , Patrick Splinter
IPC分类号： H01J37/317
CPC分类号： H01J37/1471 , H01J37/04 , H01J37/304 , H01J37/3171 , H01J2237/0475 , H01J2237/055 , H01J2237/1501 , H01J2237/152 , H01J2237/24507 , H01J2237/24528 , H01J2237/3045 , H01J2237/31703
摘要： A parallelizing component of an ion implantation system comprises two angled dipole magnets that mirror one another and serve to bend an ion beam traversing therethrough to have a substantially “s” shape. This s bend serves to filter out contaminants of the beam, while the dipoles also parallelize the beam to facilitate uniform implant properties across the wafer, such as implant angle, for example. Additionally, a deceleration stage is included toward the end of the implantation system so that the energy of the beam can be kept relatively high throughout the beamline to mitigate beam blowup.
摘要翻译： 离子注入系统的平行化部件包括两个成角度的偶极子磁体，其彼此相互反射并用于弯曲横穿其中的离子束以具有基本上“s”的形状。 该弯曲用于滤除光束的污染物，而偶极子也使光束平行化，以促进跨晶片的均匀植入性能，例如植入角度。 此外，朝向植入系统的端部包括减速阶段，使得束的能量可以在整个束线中保持相对较高以减轻束的膨胀。
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4.发明申请公开(公告)号：US20090321625A1
公开(公告)日：2009-12-31
申请号：US12554277
申请日：2009-09-04
IPC分类号： H01J49/26
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488 , H01J2237/31703 , H01J2237/31706
摘要： A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.
摘要翻译： 提供了一种用于在多个工作范围内将离子注入工件的系统和方法。 提供所需的离子剂量，并且由离子源形成点离子束，并通过质量分析器进行质量分析。 基于所需的离子剂量，将离子以第一模式和第二模式中的一种注入到工件中，其中在第一模式中，离子束被位于质量分析器下游的束扫描系统扫描，并由 位于光束扫描系统下游的并联器。 在第一模式中，工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。 在第二模式中，离子束通过光束扫描系统，并行扫描未扫描，工件通过点离子束二维扫描。
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5.发明授权Ion implanter having combined hybrid and double mechanical scan architecture 有权离子注入机具有组合的混合和双机械扫描架构公开(公告)号：US07586111B2
公开(公告)日：2009-09-08
申请号：US11831744
申请日：2007-07-31
IPC分类号： H01J37/317 , H01J29/51 , G21K1/08
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488 , H01J2237/31703 , H01J2237/31706
摘要： A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.
摘要翻译： 提供了一种用于在多个工作范围内将离子注入工件的系统和方法。 提供所需的离子剂量，并且由离子源形成点离子束，并通过质量分析器进行质量分析。 基于所需的离子剂量，将离子以第一模式和第二模式中的一种注入到工件中，其中在第一模式中，离子束由位于质量分析器下游的束扫描系统扫描，并由 位于光束扫描系统下游的并联器。 在第一模式中，工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。 在第二模式中，离子束通过光束扫描系统，并行扫描未扫描，工件通过点离子束二维扫描。
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6.发明申请公开(公告)号：US20090032726A1
公开(公告)日：2009-02-05
申请号：US11831744
申请日：2007-07-31
IPC分类号： H01J37/20
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488 , H01J2237/31703 , H01J2237/31706
摘要： A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.
摘要翻译： 提供了一种用于在多个工作范围内将离子注入工件的系统和方法。 提供所需的离子剂量，并且由离子源形成点离子束，并通过质量分析器进行质量分析。 基于所需的离子剂量，将离子以第一模式和第二模式中的一种注入到工件中，其中在第一模式中，离子束被位于质量分析器下游的束扫描系统扫描，并由 位于光束扫描系统下游的并联器。 在第一模式中，工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。 在第二模式中，离子束通过光束扫描系统，并行扫描未扫描，工件通过点离子束二维扫描。
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公开(公告)号：US20070262271A1
公开(公告)日：2007-11-15
申请号：US11432977
申请日：2006-05-12
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0822 , H01J2237/20 , H01J2237/244 , H01L21/26513 , H01L21/26566 , H01L21/67213
摘要： An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.
摘要翻译： 提供了用于将离子注入到工件中的离子注入簇工具，其中具有与其相关联的多个离子束线的多个束线组件围绕公共处理室定位。 多个离子束线组件中的每一个与公共处理室选择性地隔离，并且多个束线在处理室的处理区域相交。 定位在公共处理室内的扫描设备可操作以选择性地将工件保持器在一个或多个方向上通过处理区域内的多个离子束线中的每一个，并且公共处理室内的常见剂量测量装置可操作以测量一个 或更多的多个离子束线中的每一个的性质。 负载锁定室可操作地联接到公共处理室，用于在公共处理室和外部环境之间交换工件。
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公开(公告)号：US07557363B2
公开(公告)日：2009-07-07
申请号：US11543346
申请日：2006-10-04
申请人： Yongzhang Huang , Brian S. Freer , John Ye , Christopher Godfrey , Michael A. Graf , Patrick Splinter
发明人： Yongzhang Huang , Brian S. Freer , John Ye , Christopher Godfrey , Michael A. Graf , Patrick Splinter
IPC分类号： H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/24507 , H01J2237/24535 , H01J2237/31703
摘要： A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.
摘要翻译： 一种方法导出终端返回电流或上游电流，以调整和/或补偿离子注入期间束电流的变化。 从离子注入系统的区域获得一个或多个单独的上游电流测量。 从一个或多个电流测量导出终端返回电流或复合上游电流。 然后使用端子返回电流来调整离子束的扫描或剂量，以便于目标晶片处的束电流均匀性。
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公开(公告)号：US20080067433A1
公开(公告)日：2008-03-20
申请号：US11441609
申请日：2006-05-26
申请人： Que Weiguo , Yongzhang Huang , John Ye , David Tao , Patrick Splinter
发明人： Que Weiguo , Yongzhang Huang , John Ye , David Tao , Patrick Splinter
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/241 , H01J37/304 , H01J37/3045 , H01J2237/0206 , H01J2237/24564 , H01J2237/2485 , H01J2237/30455 , H01J2237/31703 , Y10T307/937 , Y10T307/951 , Y10T307/957
摘要： The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.
摘要翻译： 本发明涉及一种用于在离子注入系统内快速启用或禁用离子束到晶片的开关电路和方法。 光束控制技术可以应用于晶片掺杂重绘和占空因数降低。 电路和方法可以用于淬灭可以在与离子源相关联的高压电极之间形成的电弧，以缩短电弧的持续时间并减轻非均匀的离子注入。 电路和方法有助于在检测到电弧的区域上重新分离离子束，以在这种电弧过程中恢复剂量损失。 在每个高压电源和其各自的电极之间增加高压高速开关电路，以快速熄灭电弧，以最小化离子束的破坏。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从反应部件吸收能量并夹紧任何过电压。
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公开(公告)号：US07507977B2
公开(公告)日：2009-03-24
申请号：US11441609
申请日：2006-05-26
申请人： Que Weiguo , Yongzhang Huang , John Ye , David Tao , Patrick Splinter
发明人： Que Weiguo , Yongzhang Huang , John Ye , David Tao , Patrick Splinter
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/241 , H01J37/304 , H01J37/3045 , H01J2237/0206 , H01J2237/24564 , H01J2237/2485 , H01J2237/30455 , H01J2237/31703 , Y10T307/937 , Y10T307/951 , Y10T307/957
摘要： The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.
摘要翻译： 本发明涉及一种用于在离子注入系统内快速启用或禁用离子束到晶片的开关电路和方法。 光束控制技术可以应用于晶片掺杂重绘和占空因数降低。 电路和方法可以用于淬灭可以在与离子源相关联的高压电极之间形成的电弧，以缩短电弧的持续时间并减轻非均匀的离子注入。 电路和方法有助于在检测到电弧的区域上重新分离离子束，以在这种电弧过程中恢复剂量损失。 在每个高压电源和其各自的电极之间增加高压高速开关电路，以快速熄灭电弧，以最小化离子束的破坏。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从反应部件吸收能量并夹紧任何过电压。
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