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公开(公告)号：US09679746B2
公开(公告)日：2017-06-13
申请号：US14925875
申请日：2015-10-28
发明人： Sheng-Wei Lee
IPC分类号： H01J37/36 , H01J37/317 , H01L21/265 , H01J37/147 , H01J37/20
CPC分类号： H01J37/3172 , H01J37/147 , H01J37/20 , H01J37/3171 , H01J2237/30433 , H01J2237/30455 , H01J2237/31703 , H01J2237/31706 , H01L21/265
摘要： An ion implantation tool includes a process chamber, a platen, an ion source, and a plurality of controlling units. The platen is present in the process chamber and configured to hold a wafer. The ion source is configured to provide an ion beam onto the wafer. The controlling units are present on the platen and configured to apply a plurality of physical fields that are able to affect motions of ions of the ion beam onto the wafer.
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公开(公告)号：US08772741B2
公开(公告)日：2014-07-08
申请号：US13432936
申请日：2012-03-28
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/3023 , H01J37/3172 , H01J2237/30483 , H01J2237/31701 , H01J2237/31706
摘要： An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.
摘要翻译： 离子注入方法包括：对离子束进行往复扫描，在垂直于光束扫描方向的方向上机械地扫描晶片，以及将离子注入晶片。 将晶片分割为多个注入区域，对于每个注入区域，将波束扫描方向的波束扫描速度设定为变化，通过改变和控制每个注入区域的离子注入量分布来控制 光束扫描速度，并且对每个注入区域的离子注入量进行控制，并且通过设置晶片来使每个注入区域的光束扫描速度控制中的光束扫描频率和光束扫描幅度保持恒定 机械扫描速度并控制每个注入区域的晶片机械扫描速度。
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3.发明申请公开(公告)号：US20140042337A1
公开(公告)日：2014-02-13
申请号：US13961060
申请日：2013-08-07
IPC分类号： H01J27/16
CPC分类号： H01J37/08 , H01J27/16 , H01J37/321 , H01J37/3211 , H01J37/32165 , H01J37/32422 , H01J2237/0817 , H01J2237/31706
摘要： A wide ion beam source includes a plurality of RF windows arranged in a predetermined relationship, a single plasma chamber disposed on a first side of the plurality of RF windows, a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side, and a plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz.
摘要翻译： 宽离子束源包括以预定关系排列的多个RF窗口，设置在多个RF窗口的第一侧上的单个等离子体室，多个RF天线，多个RF天线中的每个RF天线设置在 所述多个RF窗口的相应RF窗口的第二侧，所述第二侧与所述第一侧相对，以及多个RF源，每个RF源耦合到所述多个RF天线中的相应RF天线，其中差异 由与耦合到与第一RF天线相邻的RF天线的第二RF源产生的第二RF信号的第一RF信号产生的第一RF信号产生的第一RF信号的频率大于10kHz。
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公开(公告)号：US09431247B2
公开(公告)日：2016-08-30
申请号：US14752522
申请日：2015-06-26
发明人： Zhimin Wan , Kourosh Saadatmand , Wilhelm P. Platow , Ger-Pin Lin , Ching-I Li , Rekha Padmanabhan , Gary N. Cai
IPC分类号： H01L21/265 , H01J37/302
CPC分类号： H01L21/26586 , H01J37/3026 , H01J37/3171 , H01J2237/0835 , H01J2237/30455 , H01J2237/30472 , H01J2237/31706
摘要： A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.
摘要翻译： 提供了一种用于离子注入的方法。 首先，提供非平行离子束。 此后，工件和非平行离子束之间的相对运动，以使得工件的每个区域能够被不平行离子束的不同部分连续地注入。 特别地，当至少一个三维结构位于工件的上表面上时，当工件移动时，可以通过非平行离子束适当地注入三维结构的顶表面和侧表面 跨越非平行离子束一次，仅一次。 这里，非平行离子束可以是发散离子束或会聚离子束（两者均可视为积分发散光束），也可以直接从离子源产生或者从平行离子束修饰， 发散离子束或会聚离子束。
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5.发明授权Inductively coupled plasma ion source with multiple antennas for wide ion beam 有权具有多个天线的电感耦合等离子体离子源用于宽离子束公开(公告)号：US08809803B2
公开(公告)日：2014-08-19
申请号：US13961060
申请日：2013-08-07
CPC分类号： H01J37/08 , H01J27/16 , H01J37/321 , H01J37/3211 , H01J37/32165 , H01J37/32422 , H01J2237/0817 , H01J2237/31706
摘要： A wide ion beam source includes a plurality of RF windows arranged in a predetermined relationship, a single plasma chamber disposed on a first side of the plurality of RF windows, a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side, and a plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz.
摘要翻译： 宽离子束源包括以预定关系排列的多个RF窗口，设置在多个RF窗口的第一侧上的单个等离子体室，多个RF天线，多个RF天线中的每个RF天线设置在 所述多个RF窗口的相应RF窗口的第二侧，所述第二侧与所述第一侧相对，以及多个RF源，每个RF源耦合到所述多个RF天线中的相应RF天线，其中差异 由与耦合到与第一RF天线相邻的RF天线的第二RF源产生的第二RF信号的第一RF信号产生的第一RF信号产生的第一RF信号的频率大于10kHz。
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公开(公告)号：US20120252194A1
公开(公告)日：2012-10-04
申请号：US13432936
申请日：2012-03-28
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J37/3023 , H01J37/3172 , H01J2237/30483 , H01J2237/31701 , H01J2237/31706
摘要： An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.
摘要翻译： 离子注入方法包括：对离子束进行往复扫描，在垂直于光束扫描方向的方向上机械地扫描晶片，以及将离子注入晶片。 将晶片分割为多个注入区域，对于每个注入区域，将波束扫描方向的波束扫描速度设定为变化，通过改变和控制每个注入区域的离子注入量分布来控制 光束扫描速度，并且对每个注入区域的离子注入量进行控制，并且通过设置晶片来使每个注入区域的光束扫描速度控制中的光束扫描频率和光束扫描幅度保持恒定 机械扫描速度并控制每个注入区域的晶片机械扫描速度。
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公开(公告)号：US11749501B2
公开(公告)日：2023-09-05
申请号：US17468879
申请日：2021-09-08
发明人： Jian Wang , Shinsuke Inoue , Yuta Iwanami , Takashi Sakamoto , Weijiang Zhao
IPC分类号： H01J37/20 , H01J37/317 , H01J37/304
CPC分类号： H01J37/3171 , H01J37/20 , H01J37/304 , H01J2237/31706
摘要： An ion implantation apparatus includes a transfer device that transfers a wafer, a support device that supports the wafer at an implantation position, and a control device that controls the ion implantation apparatus to perform chain implantation processing on the wafer, and that controls the transfer device or the support device according to warpage information of the wafer.
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公开(公告)号：US20170125214A1
公开(公告)日：2017-05-04
申请号：US14925875
申请日：2015-10-28
发明人： Sheng-Wei LEE
IPC分类号： H01J37/317 , H01J37/147 , H01J37/20 , H01L21/265
CPC分类号： H01J37/3172 , H01J37/147 , H01J37/20 , H01J37/3171 , H01J2237/30433 , H01J2237/30455 , H01J2237/31703 , H01J2237/31706 , H01L21/265
摘要： An ion implantation tool includes a process chamber, a platen, an ion source, and a plurality of controlling units. The platen is present in the process chamber and configured to hold a wafer. The ion source is configured to provide an ion beam onto the wafer. The controlling units are present on the platen and configured to apply a plurality of physical fields that are able to affect motions of ions of the ion beam onto the wafer.
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9.发明授权公开(公告)号：US09588416B2
公开(公告)日：2017-03-07
申请号：US14537304
申请日：2014-11-10
申请人： Dirk Robert Englund , Igal Bayn , Luozhou Li
发明人： Dirk Robert Englund , Igal Bayn , Luozhou Li
IPC分类号： G03F1/62 , C09K13/00 , C23C14/58 , C01B31/06 , G01Q80/00 , C23C16/48 , C23C16/50 , H01J37/317
CPC分类号： G03F1/62 , C01B32/28 , C09K13/00 , C23C14/58 , C23C16/483 , C23C16/486 , C23C16/487 , C23C16/50 , H01J37/3171 , H01J2237/31706
摘要： Apparatus for nanofabrication on an unconventional substrate including a patterned pliable membrane mechanically coupled to a membrane support structure, a substrate support structure to receive a substrate for processing, and an actuator to adjust the distance between the pliable membrane and the substrate. Nanofabrication on conventional and unconventional substrates can be achieved by transferring a pre-formed patterned pliable membrane onto the substrate using a transfer probe or non-stick sheet, followed by irradiating the substrate through the patterned pliable membrane so as to transfer the pattern on the pliable membrane into or out of the substrate. The apparatus and methods allow fabrication of diamond photonic crystals, fiber-integrated photonic devices and Nitrogen Vacancy (NV) centers in diamonds.
摘要翻译： 用于在非常规基材上纳米加工的装置，包括机械耦合到膜支撑结构的图案化的柔性膜，用于接收用于处理的基底的基底支撑结构以及调节柔性膜与基底之间的距离的致动器。 通过使用转移探针或不粘片将预先形成的图案化的柔韧膜转移到基底上，然后通过图案化的柔性膜照射基底，以便将图案转移到柔韧的方式上，可以实现常规和非常规基底上的纳米制造 膜进入或离开基底。 该装置和方法允许在钻石中制造金刚石光子晶体，光纤集成光子器件和氮空位（NV）中心。
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10.发明授权Ion implanter having combined hybrid and double mechanical scan architecture 有权离子注入机具有组合的混合和双机械扫描架构公开(公告)号：US08124947B2
公开(公告)日：2012-02-28
申请号：US12554277
申请日：2009-09-04
IPC分类号： H01J37/317 , H01J29/51 , G21K1/08
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488 , H01J2237/31703 , H01J2237/31706
摘要： A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.
摘要翻译： 提供了一种用于在多个工作范围内将离子注入工件的系统和方法。 提供所需的离子剂量，并且由离子源形成点离子束，并通过质量分析器进行质量分析。 基于所需的离子剂量，将离子以第一模式和第二模式中的一种注入到工件中，其中在第一模式中，离子束由位于质量分析器下游的束扫描系统扫描，并由 位于光束扫描系统下游的并联器。 在第一模式中，工件通过工件扫描系统在至少一个维度上扫描扫描的离子束。 在第二模式中，离子束通过光束扫描系统，并行扫描未扫描，工件通过点离子束二维扫描。
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