公开(公告)号：US20150162166A1

公开(公告)日：2015-06-11

申请号：US14099672

申请日：2013-12-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Po-Feng TSAI ,  Chia-Tong HO ,  Chia-Hsing LlAO ,  Sheng-Wei LEE ,  Jo-Fei WANG ,  Jong-I MOU

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/30455 ,  H01J2237/31711

摘要： A system, a method, and a non-transitory computer readable storage medium for controlling an ion implanter are disclosed herein. The system includes a sample module and a control module. The sample module is configured to generate a summarized value from process data of the ion implanter, and the process data correspond to a control parameter. The control module is configured to tune a control parameter, and the control module performs an ion implantation by releasing tools of the ion implanter in accordance with the control parameter when the summarized value meets a predetermined stability requirement.

摘要翻译： 本文公开了一种用于控制离子注入机的系统，方法和非暂时性计算机可读存储介质。 该系统包括一个采样模块和一个控制模块。 样本模块被配置为从离子注入器的过程数据生成汇总值，并且过程数据对应于控制参数。 控制模块被配置为调节控制参数，并且当总结值满足预定的稳定性要求时，控制模块根据控制参数释放离子注入机的工具来执行离子注入。

公开(公告)号：US20170125214A1

公开(公告)日：2017-05-04

申请号：US14925875

申请日：2015-10-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Sheng-Wei LEE

IPC分类号： H01J37/317 ,  H01J37/147 ,  H01J37/20 ,  H01L21/265

CPC分类号： H01J37/3172 ,  H01J37/147 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/30433 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01J2237/31706 ,  H01L21/265

摘要： An ion implantation tool includes a process chamber, a platen, an ion source, and a plurality of controlling units. The platen is present in the process chamber and configured to hold a wafer. The ion source is configured to provide an ion beam onto the wafer. The controlling units are present on the platen and configured to apply a plurality of physical fields that are able to affect motions of ions of the ion beam onto the wafer.