ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS
    1.
    发明申请
    ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS 有权
    离子植入方法和离子植入装置

    公开(公告)号:US20120252194A1

    公开(公告)日:2012-10-04

    申请号:US13432936

    申请日:2012-03-28

    IPC分类号: H01L21/265

    摘要: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.

    摘要翻译: 离子注入方法包括:对离子束进行往复扫描,在垂直于光束扫描方向的方向上机械地扫描晶片,以及将离子注入晶片。 将晶片分割为多个注入区域,对于每个注入区域,将波束扫描方向的波束扫描速度设定为变化,通过改变和控制每个注入区域的离子注入量分布来控制 光束扫描速度,并且对每个注入区域的离子注入量进行控制,并且通过设置晶片来使每个注入区域的光束扫描速度控制中的光束扫描频率和光束扫描幅度保持恒定 机械扫描速度并控制每个注入区域的晶片机械扫描速度。

    Ion implantation method and ion implantation apparatus
    2.
    发明授权
    Ion implantation method and ion implantation apparatus 有权
    离子注入法和离子注入装置

    公开(公告)号:US08772741B2

    公开(公告)日:2014-07-08

    申请号:US13432936

    申请日:2012-03-28

    IPC分类号: H01J37/317

    摘要: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.

    摘要翻译: 离子注入方法包括:对离子束进行往复扫描,在垂直于光束扫描方向的方向上机械地扫描晶片,以及将离子注入晶片。 将晶片分割为多个注入区域,对于每个注入区域,将波束扫描方向的波束扫描速度设定为变化,通过改变和控制每个注入区域的离子注入量分布来控制 光束扫描速度,并且对每个注入区域的离子注入量进行控制,并且通过设置晶片来使每个注入区域的光束扫描速度控制中的光束扫描频率和光束扫描幅度保持恒定 机械扫描速度并控制每个注入区域的晶片机械扫描速度。