Abstract:
Computer-implemented methods, computer-readable media, and systems for selecting one or more parameters for a defect detection method are provided. One method includes selecting one or more parameters of a defect detection method using an optimization function and information for a set of classified defects, which includes defects of interest and nuisance defects, such that the one or more parameters satisfy an objective for the defect detection method.
Abstract:
Systems and methods for generating information for use in a wafer inspection process are provided. One method includes acquiring output of an inspection system for die(s) located on wafer(s), combining the output for the die(s) based on within die positions of the output, determining, on a within die position basis, a statistical property of variation in values of characteristic(s) of the combined output, and assigning the within die positions to different groups based on the statistical properties determined for the within die positions. The method also includes storing information for the within die positions and the different groups to which the within die positions are assigned in a storage medium that is accessible to the inspection system for performing the wafer inspection process, which includes applying defect detection parameter(s) to additional output of the inspection system generated for a wafer based on the information thereby detecting defects on the wafer.
Abstract:
Generalized virtual inspectors are provided. One system includes two or more actual systems configured to perform one or more processes on specimen(s) while the specimen(s) are disposed within the actual systems. The system also includes one or more virtual systems coupled to the actual systems to thereby receive output generated by the actual systems and to send information to the actual systems. The virtual system(s) are configured to perform one or more functions using at least some of the output received from the actual systems. The virtual system(s) are not capable of having the specimen(s) disposed therein.
Abstract:
Systems and methods for acquiring information for a construction site are provided. One system includes a base unit positioned within a construction site by a user. A computer subsystem of the base unit determines a position of the base unit with respect to the construction site. The system also includes a measurement unit moved within the construction site by a user. The measurement unit includes one or more elements configured to interact with light in a known manner. An optical subsystem of the base unit directs light to the element(s) and detects the light after interacting with the element(s). The computer subsystem is configured to determine a position and pose of the measurement unit with respect to the base unit based on the detected light. The measurement unit includes a measurement device used by the measurement unit or the base unit to determine information for the construction site.
Abstract:
Methods and systems for detecting defects on a wafer using defect-specific information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest formed on the wafer and a known DOI occurring proximate to or in the pattern of interest. The information includes an image of the target on the wafer. The method also includes searching for target candidates on the wafer or another wafer. The target candidates include the pattern of interest. The target and target candidate locations are provided to defect detection. In addition, the method includes detecting the known DOI in the target candidates by identifying potential DOI locations in images of the target candidates and applying one or more detection parameters to images of the potential DOI locations.
Abstract:
Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.
Abstract:
Methods and systems for determining design coordinates for defects detected on a wafer are provided. One method includes aligning a design for a wafer to defect review tool images for defects detected in multiple swaths on the wafer by an inspection tool, determining a position of each of the defects in design coordinates based on results of the aligning, separately determining a defect position offset for each of the multiple swaths based on the swath in which each of the defects was detected (swath correction factor), the design coordinates for each of the defects, and a position for each of the defects determined by the inspection tool, and determining design coordinates for the other defects detected in the multiple swaths by the inspection tool by applying the appropriate swath correction factor to those defects.
Abstract:
Illumination subsystems of a metrology or inspection system, metrology systems, inspection systems, and methods for illuminating a specimen for metrology measurements or for inspection are provided. One illumination subsystem includes a light source configured to generate coherent pulses of light and a dispersive element positioned in the path of the coherent pulses of light, which is configured to reduce coherence of the pulses of light by mixing spatial and temporal characteristics of light distribution in the pulses of light. The illumination subsystem also includes an electro-optic modulator positioned in the path of the pulses of light exiting the dispersive element and which is configured to reduce the coherence of the pulses of light by temporally modulating the light distribution in the pulses of light. The illumination subsystem is configured to direct the pulses of light from the electro-optic modulator to a specimen.
Abstract:
Methods, systems, and structures for monitoring incident beam position in a wafer inspection system are provided. One structure includes a feature formed in a chuck configured to support a wafer during inspection by the wafer inspection system. The chuck rotates the wafer in a theta direction and simultaneously translates the wafer in a radial direction during the inspection. An axis through the center of the feature is aligned with a radius of the chuck such that a position of the axis relative to an incident beam of the wafer inspection system indicates changes in the incident beam position in the theta direction.
Abstract:
Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.