公开(公告)号：US20140268118A1

公开(公告)日：2014-09-18

申请号：US13834662

申请日：2013-03-15

Applicant: KLA-TENCOR CORPORATION

Inventor： Zhiwei Xu ,  Christian Wolters ,  Juergen Reich ,  Bret Whiteside ,  Guoheng Zhao ,  Jijen Vazhaeparambil ,  Stephen Biellak ,  Sam Shamouilian ,  Mehdi Vaez-Iravani

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/956

Abstract: The disclosure is directed to a system and method for inspecting a spinning sample by substantially simultaneously scanning multiple spots on a surface of the sample utilizing a plurality of illumination beams. Portions of illumination reflected, scattered, or radiated from respective spots on the surface of the sample are collected by at least one detector array. Information associated with at least one defect of the sample is determined by at least one computing system in communication with the detector array. According to various embodiments, at least one of scan pitch, spot size, spot separation, and spin rate is controlled to compensate pitch error due to tangential spot separation.

Abstract translation: 本公开涉及一种用于通过基本上同时使用多个照明光束扫描样品表面上的多个点来检查纺丝样品的系统和方法。 通过至少一个检测器阵列收集从样品表面上的各个点反射，散射或辐射的照射部分。 与样品的至少一个缺陷相关联的信息由与检测器阵列通信的至少一个计算系统确定。 根据各种实施例，控制扫描间距，光斑尺寸，光点分离和旋转速率中的至少一个以补偿由于切点分离引起的俯仰误差。

公开(公告)号：US08786850B2

公开(公告)日：2014-07-22

申请号：US13662626

申请日：2012-10-29

Applicant: KLA-Tencor Corporation

Inventor： Christian Wolters ,  Aleksey Petrenko ,  Kurt L. Haller ,  Juergen Reich ,  Zhiwei Xu ,  Stephen Biellak ,  George Kren

IPC: G01N21/00 ,  G01N21/88 ,  G01B11/00

CPC classification number: G01N21/8806 ,  F21V23/003 ,  G01N21/9501 ,  G01N2021/8835

Abstract: The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.

Abstract translation: 本公开涉及一种管理照射能量的系统和方法，所述照明能量施加到被扫描的晶片的照明部分，以减轻照射诱发的损伤，而不会不必要地损害检查系统的信噪比。 可以以选定的旋转频率旋转晶片，以利用检查系统扫描晶片缺陷。 照射能量可以在晶片的至少一个扫描区域上作为照射部分离晶片中心的径向距离和晶片的选定旋转频率的函数而变化。 照明能量可以进一步在晶片的一个或多个扫描区域上恒定地超过距离晶片中心的选定距离。

公开(公告)号：US09194812B2

公开(公告)日：2015-11-24

申请号：US14336810

申请日：2014-07-21

Applicant: KLA-Tencor Corporation

Inventor： Christian Wolters ,  Aleksey Petrenko ,  Kurt L. Haller ,  Juergen Reich ,  Zhiwei Xu ,  Stephen Biellak ,  George Kren

IPC: G01N21/00 ,  G01N21/88 ,  G01N21/95 ,  F21V23/00

CPC classification number: G01N21/8806 ,  F21V23/003 ,  G01N21/9501 ,  G01N2021/8835

Abstract: The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.

Abstract translation: 本公开涉及一种管理照射能量的系统和方法，所述照明能量施加到被扫描的晶片的照明部分，以减轻照射诱发的损伤，而不会不必要地损害检查系统的信噪比。 可以以选定的旋转频率旋转晶片，以利用检查系统扫描晶片缺陷。 照射能量可以在晶片的至少一个扫描区域上作为照射部分离晶片中心的径向距离和晶片的选定旋转频率的函数而变化。 照明能量可以进一步在晶片的一个或多个扫描区域上恒定地超过距离晶片中心的选定距离。

公开(公告)号：US09116132B2

公开(公告)日：2015-08-25

申请号：US14532989

申请日：2014-11-04

Applicant: KLA-Tencor Corporation

Inventor： Christian Wolters ,  Juergen Reich

IPC: G01N21/95 ,  G01N21/956

CPC classification number: G01N21/9501 ,  G01N21/956 ,  G01N2201/06113 ,  G01N2201/103

Abstract: A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.

Abstract translation: 提出了具有独立可调的扫描间距和相关操作方法的表面扫描晶片检查系统。 可以独立于晶片表面上的照明区域来调整扫描间距。 在一些实施例中，在照明区域保持恒定的同时调整扫描间距。 例如，通过调整晶片相对于晶片的旋转速率的平移速率来调整缺陷灵敏度，而无需额外的光学调整。 在一些示例中，调整扫描间距以在整个晶片上实现期望的缺陷灵敏度。 在其他示例中，在晶片检查期间调整扫描间距以优化缺陷灵敏度和产量。 在其他示例中，调整扫描间距以使在检查的晶片的损伤极限内的缺陷灵敏度最大化。

公开(公告)号：US08934091B2

公开(公告)日：2015-01-13

申请号：US13794030

申请日：2013-03-11

Applicant: KLA-Tencor Corporation

Inventor： Juergen Reich ,  Aleksey Petrenko ,  Richard Fong ,  Bret Whiteside ,  Jien Cao ,  Christian Wolters ,  Anatoly Romanovsky ,  Daniel Kavaldjiev

IPC: G01J1/00 ,  H01L21/67 ,  G01J1/42

CPC classification number: G01J1/4257 ,  G01N21/9501 ,  H01L21/67259 ,  H01L21/681

Abstract: Methods, systems, and structures for monitoring incident beam position in a wafer inspection system are provided. One structure includes a feature formed in a chuck configured to support a wafer during inspection by the wafer inspection system. The chuck rotates the wafer in a theta direction and simultaneously translates the wafer in a radial direction during the inspection. An axis through the center of the feature is aligned with a radius of the chuck such that a position of the axis relative to an incident beam of the wafer inspection system indicates changes in the incident beam position in the theta direction.

Abstract translation: 提供了用于监测晶片检测系统中的入射光束位置的方法，系统和结构。 一种结构包括形成在卡盘中的特征，其构造成在晶片检查系统检查期间支撑晶片。 卡盘在θ方向旋转晶片，同时在检查期间沿径向方向平移晶片。 穿过特征中心的轴与卡盘的半径对准，使得轴相对于晶片检查系统的入射光束的位置指示在θ方向上的入射光束位置的变化。

公开(公告)号：US09182358B2

公开(公告)日：2015-11-10

申请号：US13834662

申请日：2013-03-15

Applicant: KLA-Tencor Corporation

Inventor： Zhiwei Xu ,  Christian Wolters ,  Juergen Reich ,  Bret Whiteside ,  Guoheng Zhao ,  Jijen Vazhaeparambil ,  Stephen Biellak ,  Sam Shamouilian ,  Mehdi Vaez-Iravani

IPC: G01N21/00 ,  G01N21/95 ,  G01N21/956

CPC classification number: G01N21/9501 ,  G01N21/956

Abstract: The disclosure is directed to a system and method for inspecting a spinning sample by substantially simultaneously scanning multiple spots on a surface of the sample utilizing a plurality of illumination beams. Portions of illumination reflected, scattered, or radiated from respective spots on the surface of the sample are collected by at least one detector array. Information associated with at least one defect of the sample is determined by at least one computing system in communication with the detector array. According to various embodiments, at least one of scan pitch, spot size, spot separation, and spin rate is controlled to compensate pitch error due to tangential spot separation.

Abstract translation: 本公开涉及一种用于通过基本上同时使用多个照明光束扫描样品表面上的多个点来检查纺丝样品的系统和方法。 通过至少一个检测器阵列收集从样品表面上的各个点反射，散射或辐射的照射部分。 与样品的至少一个缺陷相关联的信息由与检测器阵列通信的至少一个计算系统确定。 根据各种实施例，控制扫描间距，光斑尺寸，光点分离和旋转速率中的至少一个以补偿由于切点分离引起的俯仰误差。

公开(公告)号：US20150055128A1

公开(公告)日：2015-02-26

申请号：US14532989

申请日：2014-11-04

Applicant: KLA-Tencor Corporation

Inventor： Christian Wolters ,  Juergen Reich

IPC: G01N21/95 ,  G01N21/956

CPC classification number: G01N21/9501 ,  G01N21/956 ,  G01N2201/06113 ,  G01N2201/103

Abstract: A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.

Abstract translation: 提出了具有独立可调的扫描间距和相关操作方法的表面扫描晶片检查系统。 可以独立于晶片表面上的照明区域来调整扫描间距。 在一些实施例中，在照明区域保持恒定的同时调整扫描间距。 例如，通过调整晶片相对于晶片的旋转速率的平移速率来调整缺陷灵敏度，而无需额外的光学调整。 在一些示例中，调整扫描间距以在整个晶片上实现期望的缺陷灵敏度。 在其他示例中，在晶片检查期间调整扫描间距以优化缺陷灵敏度和产量。 在其他示例中，调整扫描间距以使在检查的晶片的损伤极限内的缺陷灵敏度最大化。

公开(公告)号：US20140118729A1

公开(公告)日：2014-05-01

申请号：US13662626

申请日：2012-10-29

Applicant: KLA-Tencor Corporation

Inventor： Christian Wolters ,  Aleksey Petrenko ,  Kurt L. Haller ,  Juergen Reich ,  Zhiwei Xu ,  Stephen Biellak ,  George J. Kren

IPC: G01N21/95

CPC classification number: G01N21/8806 ,  F21V23/003 ,  G01N21/9501 ,  G01N2021/8835

Abstract: The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.

Abstract translation: 本公开涉及一种管理照射能量的系统和方法，所述照明能量施加到被扫描的晶片的照明部分，以减轻照射诱发的损伤，而不会不必要地损害检查系统的信噪比。 可以以选定的旋转频率旋转晶片，以利用检查系统扫描晶片缺陷。 照射能量可以在晶片的至少一个扫描区域上作为照射部分离晶片中心的径向距离和晶片的选定旋转频率的函数而变化。 照明能量可以进一步在晶片的一个或多个扫描区域上恒定地超过距离晶片中心的选定距离。

公开(公告)号：US09664909B1

公开(公告)日：2017-05-30

申请号：US13940130

申请日：2013-07-11

Applicant: KLA-Tencor Corporation

Inventor： Bret Whiteside ,  Patrick Czarnota ,  Juergen Reich ,  Sam Shamouilian

IPC: G02B27/14 ,  G02B27/10

CPC classification number: G02B17/086 ,  G02B27/141

Abstract: A beam splitter includes first and second prisms. The first prism includes first, second, and third optical surfaces. The second prism includes three surfaces, one of which faces the second surface of the first prism and both transmit and reflect light. The first surface of the first prism is curved and forms a lens for focusing light either transmitted or reflected by the common interface between the two prisms. The first prism is from a single piece of material. Fabrication includes making two cuts through a lens to cut-out an intermediate section. A portion of the intermediate section is cut-off to form the third surface of the first prism. The first surface of the first prism corresponds to the curved top surface of the lens. The second surface of the first prism corresponds to the bottom plano surface of the lens. The first and second prisms are then combined.

公开(公告)号：US09255891B2

公开(公告)日：2016-02-09

申请号：US14036360

申请日：2013-09-25

Applicant: KLA-Tencor Corporation

Inventor： Christian Wolters ,  Zhiwei Xu ,  Juergen Reich

IPC: G01N21/00 ,  G01N21/95

CPC classification number: G01N21/9501

Abstract: Methods and systems for reshaping the beam intensity distribution of an illumination light supplied to a specimen under inspection are presented. A scanning surface inspection system includes a beam shaping element that flattens the beam intensity distribution of a beam of light generated by an illumination source. The reshaped illumination light is directed to the wafer surface over an illumination spot. With a flattened beam intensity distribution, the incident beam power can be increased without the beam intensity exceeding the damage threshold of the wafer at any particular location. In addition, the illumination spot is shaped by the beam shaping element to have a variable beam width in a direction parallel to the inspection track. The location of a defect within an inspection area having a variable beam width is estimated based on an analysis of the output of the detector.

Abstract translation: 提出了改造供应给检验样本的照明光束的光束强度分布的方法和系统。 扫描面检查系统包括使由照明源产生的光束的光束强度分布变平的光束成形元件。 重新整形的照明光在照明点上被引导到晶片表面。 通过平坦的光束强度分布，可以增加入射光束功率，而不会使光束强度超过任何特定位置的晶片的损伤阈值。 此外，照明光斑通过光束成形元件成形，以在与检查轨道平行的方向上具有可变的光束宽度。 基于对检测器的输出的分析来估计具有可变波束宽度的检查区域内的缺陷的位置。