AUTOMATIC TOFU-PACKING APPARATUS
    91.
    发明申请
    AUTOMATIC TOFU-PACKING APPARATUS 审中-公开
    自动包装机

    公开(公告)号:US20100269453A1

    公开(公告)日:2010-10-28

    申请号:US12734987

    申请日:2008-09-04

    IPC分类号: B65B65/00

    摘要: Tofu is automatically packed at high speed without damaging the tofu, and water is saved through elimination of the need for exposing the tofu to water. An automatic apparatus for packing tofu includes a pack-moving device 2 for conveying a pack P for tofu T, and a tofu-transporting device 3 disposed above the pack-moving device 2 and conveying cut tofu T having a packing size. Both the pack-moving device 2 and the tofu-transporting device 3 are used to move the tofu T and pack P in the same traveling direction, thereby placing the tofu T in a lower pack P from above.

    摘要翻译: 豆腐自动包装,不会损坏豆腐,通过消除将豆腐暴露于水中的需要,可以节省水分。 用于包装豆腐的自动装置包括用于输送用于豆腐T的包P的包装移动装置2和设置在包装移动装置2上方的豆腐输送装置3,并输送具有包装尺寸的切割豆腐T. 包装移动装置2和豆腐输送装置3均用于将豆腐T和包装P沿相同的行进方向移动,从而将豆腐T从上方放置在下部包装P中。

    SEMICONDUCTOR DEVICE HAVING NON-SILICIDE REGION IN WHICH NO SILICIDE IS FORMED ON DIFFUSION LAYER
    92.
    发明申请
    SEMICONDUCTOR DEVICE HAVING NON-SILICIDE REGION IN WHICH NO SILICIDE IS FORMED ON DIFFUSION LAYER 有权
    具有不渗透层的非硅化物区域的半导体器件在扩散层上形成

    公开(公告)号:US20090159973A1

    公开(公告)日:2009-06-25

    申请号:US12277456

    申请日:2008-11-25

    IPC分类号: H01L27/06

    摘要: A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.

    摘要翻译: 半导体器件包括对应于至少第一电源电压和低于第一电源电压的第二电源电压的第一和第二MOSFET,以及形成在第一和第二MOSFET的漏极部分中并且不形成在其中的硅化物的非硅化物区域 。 第一MOSFET包括形成在源极/漏极部分的第一扩散层,形成在栅极部分下方并形成为比第一扩散层浅的第二扩散层,以及形成在第一扩散层中的与第二扩散层相同深度的第三扩散层, 硅化物区域,第二MOSFET包括形成在源极/漏极部分的第四扩散层,形成在栅极部分下方并形成为比第四扩散层浅的第五扩散层和形成为比第四扩散层浅的第六扩散层, 非硅化物区域中的第五扩散层。

    GMR angle sensor for vehicles
    93.
    发明授权
    GMR angle sensor for vehicles 有权
    用于车辆的GMR角度传感器

    公开(公告)号:US07405560B2

    公开(公告)日:2008-07-29

    申请号:US11651899

    申请日:2007-01-09

    IPC分类号: G01R33/09 G01B7/30

    CPC分类号: G01D5/145

    摘要: A GMR angle sensor for vehicles includes a GMR element in which the element resistance is changed in response to an external magnetic field, lead conductors connected to either end of the GMR element, and a protective layer that seals the GMR element and the lead conductors, wherein the protective layer has a laminated structure including an oxidation-resistant inorganic film that ensures that the GMR element and the lead conductors are sufficiently insulated and a silicone-based organic film laminated on the inorganic film.

    摘要翻译: 用于车辆的GMR角度传感器包括响应于外部磁场而改变元件电阻的GMR元件,连接到GMR元件的任一端的引线导体和密封GMR元件和引线导体的保护层, 其中所述保护层具有包括抗氧化性无机膜的层压结构,所述抗氧化性无机膜确保所述GMR元件和所述引线导体充分绝缘,以及层叠在所述无机膜上的硅酮类有机膜。

    MAGNETIC HEAD STRUCTURE AND ITS MANUFACTURING METHOD
    94.
    发明申请
    MAGNETIC HEAD STRUCTURE AND ITS MANUFACTURING METHOD 有权
    磁头结构及其制造方法

    公开(公告)号:US20080106820A1

    公开(公告)日:2008-05-08

    申请号:US11925104

    申请日:2007-10-26

    IPC分类号: G11B5/127

    摘要: In a magnetic head structure that forms a medium facing surface of a head element unit by polishing processing, a height monitor that is exposed in the vicinity of the head element unit during the polishing processing to index the height of the head element unit is provided in a planar rectangular shape.

    摘要翻译: 在通过抛光处理形成头元件单元的与介质相对表面的磁头结构中,在抛光处理期间暴露在头元件单元附近的高度监视器被设置在头元件单元的高度索引中 平面矩形。

    CPP-TYPE THIN-FILM MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF
    95.
    发明申请
    CPP-TYPE THIN-FILM MAGNETIC HEAD AND MANUFACTURING METHOD THEREOF 审中-公开
    CPP型薄膜磁头及其制造方法

    公开(公告)号:US20070115595A1

    公开(公告)日:2007-05-24

    申请号:US11558345

    申请日:2006-11-09

    IPC分类号: G11B5/33 G11B5/127

    摘要: a CCP-type thin-film magnetic head and a manufacturing method thereof are provided. The CCP-type thin-film magnetic head includes a thin-film magnetic head element formed between the upper shield layer and the lower shield layer, and a side fill gap layer securing the insulating property, which is formed from both end faces of the thin-film magnetic head element, wherein a top surface of the lower shield layer is formed in a non-flat surface having a convex portion disposed at a center in a track width direction and a concave portion disposed at both sides in a track width direction of the convex portion, the thin-film magnetic head element is formed on the convex portion, and an buried gap layer contacting the side fill gap layer is formed in the concave portion.

    摘要翻译: 提供了一种CCP型薄膜磁头及其制造方法。 CCP型薄膜磁头包括形成在上屏蔽层和下屏蔽层之间的薄膜磁头元件,以及确保绝缘性能的侧填充间隙层,其由薄的两个端面形成 所述下屏蔽层的上表面形成在具有设置在轨道宽度方向的中心的凸部的非平坦面和设置在轨道宽度方向的两侧的凹部 凸部,薄膜磁头元件形成在凸部上,并且在凹部中形成与侧填充间隙层接触的掩埋间隙层。

    Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same
    96.
    发明授权
    Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same 有权
    在源极/漏极区域上具有金属硅化物层和栅电极的半导体器件及其制造方法

    公开(公告)号:US07176536B2

    公开(公告)日:2007-02-13

    申请号:US10837748

    申请日:2004-05-04

    摘要: A semiconductor device includes a semiconductor substrate, an element-isolating region formed in the semiconductor substrate, a real element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof, and a dummy element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof. The ratio of the sum of pattern areas of the real element region and dummy element region occupied in a 1 μm-square range of interest including the element region is 25% or more.

    摘要翻译: 半导体器件包括半导体衬底,形成在半导体衬底中的元件隔离区域,形成在半导体衬底中并在元件隔离区域外部并且在其表面上形成有金属硅化物层的真实元件区域,以及虚拟元件 元件区域形成在半导体衬底中并且在元件隔离区域外部并且在其表面上形成有金属硅化物层。 在包括元件区域的1个平均兴趣范围内占有的实数元素区域和虚设元素区域的图案区域之和的比率为25%以上。

    Vehicular driving force distribution system
    97.
    发明申请
    Vehicular driving force distribution system 有权
    车辆驱动力分配系统

    公开(公告)号:US20070021262A1

    公开(公告)日:2007-01-25

    申请号:US11481254

    申请日:2006-07-06

    IPC分类号: F16H37/08 F16H48/30

    摘要: In a vehicular driving force distribution system, an oil pump which produces a hydraulic pressure for operating a torque distribution mechanism is driven, via gears and a rotating shaft, by the rotation of a differential case of a differential device. Therefore, regardless of the rotational condition of right and left wheels, namely, even if one of the right and left wheels stops, the oil pump is driven by the driving force of the rotating differential case, thereby reliably operating the torque distribution mechanism. Also, a pump unit for housing the oil pump is supported on a partition wall that separates the differential device from the torque distribution mechanism, thereby easily supporting the oil pump.

    摘要翻译: 在车辆驱动力分配系统中,通过差动装置的差动箱的旋转,通过齿轮和旋转轴来驱动产生用于操作扭矩分配机构的液压的油泵。 因此,无论左右车轮的旋转状态如何,即使左右一车轮中的一方停止,油泵也由旋转差动箱的驱动力驱动,从而可靠地操作转矩分配机构。 此外,用于容纳油泵的泵单元支撑在将差速装置与扭矩分配机构分离的分隔壁上,从而容易地支撑油泵。

    Thin-film magnetic head provided with leader section composed of good conductor extending from coil to terminal region and method of making the same
    98.
    发明授权
    Thin-film magnetic head provided with leader section composed of good conductor extending from coil to terminal region and method of making the same 失效
    薄膜磁头设置有由线圈到端子区域延伸的良好导体组成的引线部分及其制造方法

    公开(公告)号:US06487044B1

    公开(公告)日:2002-11-26

    申请号:US09533279

    申请日:2000-03-22

    申请人: Kenji Honda

    发明人: Kenji Honda

    IPC分类号: G11B560

    CPC分类号: G11B5/4853

    摘要: A thin-film magnetic head includes a lower core composed of a magnetic material provided on a slider, a first insulating layer formed on the lower core, a spiral coil composed of a good conductor formed on the first insulating layer, a first leader section composed of a good conductor formed on the slider, the first leader section being connected to an end of the coil and extending to a terminal region provided on the slider, a second insulating layer formed on the first insulating layer so as to cover the coil, and an upper core composed of a magnetic material formed on the second insulating layer, the upper core being in contact with the lower core at the center of the coil. A protective magnetic film is formed on the surface of the first leader section.

    摘要翻译: 薄膜磁头包括由设置在滑块上的磁性材料构成的下芯体,形成在下芯上的第一绝缘层,由形成在第一绝缘层上的良导体构成的螺旋线圈,第一引导部分组成 形成在所述滑块上的良导体,所述第一引导部分连接到所述线圈的端部并且延伸到设置在所述滑块上的端子区域;形成在所述第一绝缘层上以覆盖所述线圈的第二绝缘层;以及 由形成在所述第二绝缘层上的磁性材料构成的上芯,所述上芯在所述线圈的中心与所述下芯接触。 在第一引导部分的表面上形成保护性磁性膜。