Method of manufacturing a stator
    1.
    发明授权
    Method of manufacturing a stator 有权
    定子的制造方法

    公开(公告)号:US08590137B2

    公开(公告)日:2013-11-26

    申请号:US13133548

    申请日:2009-10-06

    IPC分类号: H02K1/14 H02K15/02

    CPC分类号: H02K1/148 H02K1/04 H02K15/022

    摘要: A stator provided with annular split stator cores, formed by stacking steel plates. Each plate includes a yoke and a stator tooth. The cores include a yoke portion a stator tooth portion. The stator is manufactured by arranging an electromagnetic steel plate between a first die and a second die. The first die has a hole shaped as a steel plate. The second die has a projection inserted into the hole and shaped as a steel plate. The steel plates are formed by the first and the second dies. In a gap between an inner surface of the first die that defines the hole and an outer surface of the projection, a gap at a part that forms the stator tooth portion is larger than a gap at a part that defines a circumferential end surface of the yoke portion located in a circumferential direction of the stator core.

    摘要翻译: 一个定子,设有环形的分割定子芯,通过堆叠钢板形成。 每个板包括轭和定子齿。 芯部包括轭部,定子齿部。 定子通过在第一模具和第二模具之间布置电磁钢板来制造。 第一个模具有一个形状为钢板的孔。 第二模具具有插入孔中并且形成为钢板的突起。 钢板由第一和第二模具形成。 在限定孔的第一模具的内表面与突起的外表面之间的间隙中,形成定子齿部的部分的间隙大于限定了定子齿部的周向端面的部分的间隙 轭部位于定子芯的圆周方向。

    METHOD OF MANUFACTURING A STATOR
    2.
    发明申请
    METHOD OF MANUFACTURING A STATOR 有权
    制造定子的方法

    公开(公告)号:US20110258840A1

    公开(公告)日:2011-10-27

    申请号:US13133548

    申请日:2009-10-06

    IPC分类号: H02K15/02

    CPC分类号: H02K1/148 H02K1/04 H02K15/022

    摘要: A stator provided with an annular stator core formed by annularly arranging split stator cores, and also with coils mounted to the stator core. The split stator cores each includes a yoke portion extending in a circumferential direction of the stator core and a stator tooth protruding from the yoke portion. On at least part of side surfaces of the stator tooth that are arranged in a circumferential direction of the stator core, a radial end surface of the stator tooth that is located radially inward of the stator core, and, of radial end surfaces of the yoke portion that are arranged in a radial direction of the stator core, the radial end surface at which the stator tooth is formed, a rough surface portion is formed having surface roughness greater than that of circumferential end surfaces of the yoke portion that are located in a circumferential direction of the stator core.

    摘要翻译: 定子,其设置有环形定子芯,其通过环形布置分开的定子芯,以及安装到定子芯的线圈形成。 分体定子铁心各自包括在定子铁心的周向延伸的轭部和从轭部突出的定子齿。 在沿着定子铁芯的圆周方向配置的定子齿的至少一部分侧表面上,定子齿的位于定子铁芯径向内侧的径向端面和轭的径向端面 所述定子铁心的径向方向配置在所述定子齿的径向端面上,形成表面粗糙度大于所述轭部的周向端面的粗糙面部, 定子铁心圆周方向。

    Semiconductor device having non-silicide region in which no silicide is formed on diffusion layer
    3.
    发明授权
    Semiconductor device having non-silicide region in which no silicide is formed on diffusion layer 有权
    具有在扩散层上不形成硅化物的非硅化物区域的半导体器件

    公开(公告)号:US07994584B2

    公开(公告)日:2011-08-09

    申请号:US12277456

    申请日:2008-11-25

    IPC分类号: H01L21/331

    摘要: A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.

    摘要翻译: 半导体器件包括对应于至少第一电源电压和低于第一电源电压的第二电源电压的第一和第二MOSFET,以及形成在第一和第二MOSFET的漏极部分中并且不形成在其中的硅化物的非硅化物区域 。 第一MOSFET包括形成在源极/漏极部分的第一扩散层,形成在栅极部分下方并形成为比第一扩散层浅的第二扩散层,以及形成在第一扩散层中的与第二扩散层相同深度的第三扩散层, 硅化物区域,第二MOSFET包括形成在源极/漏极部分的第四扩散层,形成在栅极部分下方并形成为比第四扩散层浅的第五扩散层和形成为比第四扩散层浅的第六扩散层, 非硅化物区域中的第五扩散层。

    Memory element and method for manufacturing same
    4.
    发明授权
    Memory element and method for manufacturing same 失效
    记忆元件及其制造方法

    公开(公告)号:US07876596B2

    公开(公告)日:2011-01-25

    申请号:US11575091

    申请日:2005-11-04

    IPC分类号: G11C11/00

    摘要: A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.

    摘要翻译: 一种新颖的非易失性存储元件,其可以通过使用有机材料通过简单且高收率的方法制造并且具有高的开/关比率,以及制造这种非易失性存储元件的方法。 在阳极层(12)和阴极层(16)之间设置由绝缘自由基聚合物构成的开关层(14)。 此外,在开关层(14)和阳极层(12)之间设置有空穴注入传输层(13),以及在开关层(14)和阴极层(16)之间的电子注入传输层(15) )。 在切换层和相邻层之间设置中间层。 自由基聚合物优选为氮氧自由基聚合物。 通过湿法堆叠形成开关层(14),空穴注入传输层(13)和电子注入传输层(15)。

    Hybrid vehicle
    5.
    发明授权
    Hybrid vehicle 有权
    混合动力汽车

    公开(公告)号:US07845444B2

    公开(公告)日:2010-12-07

    申请号:US11902405

    申请日:2007-09-21

    IPC分类号: B60K6/445

    摘要: A hybrid vehicle is provided with a first transmission passage for transmitting driving force of an engine to driving wheels and a second transmission passage for transmitting driving force of a driving motor to the driving wheels, and driven by selectively using or in combination of the first transmission passage and the second transmission passage. The hybrid vehicle includes: a first input gear for inputting the driving force of the engine; a second input gear for inputting the driving force of the driving motor; and an idle gear meshed with the first input gear and the second input gear, and transmitting at least one of the driving force of the engine and the driving force of the driving motor toward the driving wheels. The driving force to be input from at least one of the first input gear and the second input gear is transmitted to the driving wheels via the idle gear and the final differential gears.

    摘要翻译: 混合动力车辆设置有用于将发动机的驱动力传递到驱动轮的第一传动通道和用于将驱动马达的驱动力传递到驱动轮的第二传递通道,并且通过选择性地使用或组合第一传动 通道和第二传输通道。 混合动力车辆包括:用于输入发动机的驱动力的第一输入齿轮; 用于输入驱动电动机的驱动力的第二输入齿轮; 以及与第一输入齿轮和第二输入齿轮啮合的空转齿轮,并且将发动机的驱动力和驱动马达的驱动力中的至少一个传递到驱动轮。 从第一输入齿轮和第二输入齿轮中的至少一个输入的驱动力经由空转齿轮和最终差速齿轮传递到驱动轮。

    AUTOMATIC TOFU-PACKING APPARATUS
    6.
    发明申请
    AUTOMATIC TOFU-PACKING APPARATUS 审中-公开
    自动包装机

    公开(公告)号:US20100269453A1

    公开(公告)日:2010-10-28

    申请号:US12734987

    申请日:2008-09-04

    IPC分类号: B65B65/00

    摘要: Tofu is automatically packed at high speed without damaging the tofu, and water is saved through elimination of the need for exposing the tofu to water. An automatic apparatus for packing tofu includes a pack-moving device 2 for conveying a pack P for tofu T, and a tofu-transporting device 3 disposed above the pack-moving device 2 and conveying cut tofu T having a packing size. Both the pack-moving device 2 and the tofu-transporting device 3 are used to move the tofu T and pack P in the same traveling direction, thereby placing the tofu T in a lower pack P from above.

    摘要翻译: 豆腐自动包装,不会损坏豆腐,通过消除将豆腐暴露于水中的需要,可以节省水分。 用于包装豆腐的自动装置包括用于输送用于豆腐T的包P的包装移动装置2和设置在包装移动装置2上方的豆腐输送装置3,并输送具有包装尺寸的切割豆腐T. 包装移动装置2和豆腐输送装置3均用于将豆腐T和包装P沿相同的行进方向移动,从而将豆腐T从上方放置在下部包装P中。

    TUBING MISLOAD DETECTION MECHANISM FOR AN INFUSION PUMP
    7.
    发明申请
    TUBING MISLOAD DETECTION MECHANISM FOR AN INFUSION PUMP 有权
    用于输液泵的管道异常检测机构

    公开(公告)号:US20090275897A1

    公开(公告)日:2009-11-05

    申请号:US12429391

    申请日:2009-04-24

    IPC分类号: A61M1/00

    摘要: [Object]To provide an infusion tube misfitting detection means for an infusion pump, which can be implemented at a low cost with a safety maintained. [Solving Means] When a door unit 20 is to be closed with respect to a pump body 10 in a misloaded state of an infusion tube 40, a misload detection inner door 25 is pressed by the infusion tube 40 to operate on a handle lock part 23A provided to a handle 23. Accordingly, a claw portion 23Ac of the handle lock part 23A is pushed up, so that the door unit 20 cannot be locked with the pump body 10 by inserting the claw portion 23Ac into a rectangular through-hole 11c of a base plate 11. Therefore, the misloaded state can be identified.

    摘要翻译: 提供一种用于输液泵的输液管错配检测装置,其可以以低成本实现,并且保持安全性。 [解决方案]当门单元20在输液管40的错误状态下相对于泵体10关闭时,由输液管40按压错误检测内门25,以在手柄锁定部 23A。因此,手柄锁定部23A的爪部23Ac被向上推,使得门单元20不能通过将爪部23Ac插入矩形通孔11c而与泵体10锁定 因此,可以识别出错误的状态。

    SEMICONDUCTOR DEVICE HAVING NON-SILICIDE REGION IN WHICH NO SILICIDE IS FORMED ON DIFFUSION LAYER
    8.
    发明申请
    SEMICONDUCTOR DEVICE HAVING NON-SILICIDE REGION IN WHICH NO SILICIDE IS FORMED ON DIFFUSION LAYER 有权
    具有不渗透层的非硅化物区域的半导体器件在扩散层上形成

    公开(公告)号:US20090159973A1

    公开(公告)日:2009-06-25

    申请号:US12277456

    申请日:2008-11-25

    IPC分类号: H01L27/06

    摘要: A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.

    摘要翻译: 半导体器件包括对应于至少第一电源电压和低于第一电源电压的第二电源电压的第一和第二MOSFET,以及形成在第一和第二MOSFET的漏极部分中并且不形成在其中的硅化物的非硅化物区域 。 第一MOSFET包括形成在源极/漏极部分的第一扩散层,形成在栅极部分下方并形成为比第一扩散层浅的第二扩散层,以及形成在第一扩散层中的与第二扩散层相同深度的第三扩散层, 硅化物区域,第二MOSFET包括形成在源极/漏极部分的第四扩散层,形成在栅极部分下方并形成为比第四扩散层浅的第五扩散层和形成为比第四扩散层浅的第六扩散层, 非硅化物区域中的第五扩散层。

    GMR angle sensor for vehicles
    9.
    发明授权
    GMR angle sensor for vehicles 有权
    用于车辆的GMR角度传感器

    公开(公告)号:US07405560B2

    公开(公告)日:2008-07-29

    申请号:US11651899

    申请日:2007-01-09

    IPC分类号: G01R33/09 G01B7/30

    CPC分类号: G01D5/145

    摘要: A GMR angle sensor for vehicles includes a GMR element in which the element resistance is changed in response to an external magnetic field, lead conductors connected to either end of the GMR element, and a protective layer that seals the GMR element and the lead conductors, wherein the protective layer has a laminated structure including an oxidation-resistant inorganic film that ensures that the GMR element and the lead conductors are sufficiently insulated and a silicone-based organic film laminated on the inorganic film.

    摘要翻译: 用于车辆的GMR角度传感器包括响应于外部磁场而改变元件电阻的GMR元件,连接到GMR元件的任一端的引线导体和密封GMR元件和引线导体的保护层, 其中所述保护层具有包括抗氧化性无机膜的层压结构,所述抗氧化性无机膜确保所述GMR元件和所述引线导体充分绝缘,以及层叠在所述无机膜上的硅酮类有机膜。

    MAGNETIC HEAD STRUCTURE AND ITS MANUFACTURING METHOD
    10.
    发明申请
    MAGNETIC HEAD STRUCTURE AND ITS MANUFACTURING METHOD 有权
    磁头结构及其制造方法

    公开(公告)号:US20080106820A1

    公开(公告)日:2008-05-08

    申请号:US11925104

    申请日:2007-10-26

    IPC分类号: G11B5/127

    摘要: In a magnetic head structure that forms a medium facing surface of a head element unit by polishing processing, a height monitor that is exposed in the vicinity of the head element unit during the polishing processing to index the height of the head element unit is provided in a planar rectangular shape.

    摘要翻译: 在通过抛光处理形成头元件单元的与介质相对表面的磁头结构中,在抛光处理期间暴露在头元件单元附近的高度监视器被设置在头元件单元的高度索引中 平面矩形。