摘要:
A stator provided with annular split stator cores, formed by stacking steel plates. Each plate includes a yoke and a stator tooth. The cores include a yoke portion a stator tooth portion. The stator is manufactured by arranging an electromagnetic steel plate between a first die and a second die. The first die has a hole shaped as a steel plate. The second die has a projection inserted into the hole and shaped as a steel plate. The steel plates are formed by the first and the second dies. In a gap between an inner surface of the first die that defines the hole and an outer surface of the projection, a gap at a part that forms the stator tooth portion is larger than a gap at a part that defines a circumferential end surface of the yoke portion located in a circumferential direction of the stator core.
摘要:
A stator provided with an annular stator core formed by annularly arranging split stator cores, and also with coils mounted to the stator core. The split stator cores each includes a yoke portion extending in a circumferential direction of the stator core and a stator tooth protruding from the yoke portion. On at least part of side surfaces of the stator tooth that are arranged in a circumferential direction of the stator core, a radial end surface of the stator tooth that is located radially inward of the stator core, and, of radial end surfaces of the yoke portion that are arranged in a radial direction of the stator core, the radial end surface at which the stator tooth is formed, a rough surface portion is formed having surface roughness greater than that of circumferential end surfaces of the yoke portion that are located in a circumferential direction of the stator core.
摘要:
A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.
摘要:
A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.
摘要:
A hybrid vehicle is provided with a first transmission passage for transmitting driving force of an engine to driving wheels and a second transmission passage for transmitting driving force of a driving motor to the driving wheels, and driven by selectively using or in combination of the first transmission passage and the second transmission passage. The hybrid vehicle includes: a first input gear for inputting the driving force of the engine; a second input gear for inputting the driving force of the driving motor; and an idle gear meshed with the first input gear and the second input gear, and transmitting at least one of the driving force of the engine and the driving force of the driving motor toward the driving wheels. The driving force to be input from at least one of the first input gear and the second input gear is transmitted to the driving wheels via the idle gear and the final differential gears.
摘要:
Tofu is automatically packed at high speed without damaging the tofu, and water is saved through elimination of the need for exposing the tofu to water. An automatic apparatus for packing tofu includes a pack-moving device 2 for conveying a pack P for tofu T, and a tofu-transporting device 3 disposed above the pack-moving device 2 and conveying cut tofu T having a packing size. Both the pack-moving device 2 and the tofu-transporting device 3 are used to move the tofu T and pack P in the same traveling direction, thereby placing the tofu T in a lower pack P from above.
摘要:
[Object]To provide an infusion tube misfitting detection means for an infusion pump, which can be implemented at a low cost with a safety maintained. [Solving Means] When a door unit 20 is to be closed with respect to a pump body 10 in a misloaded state of an infusion tube 40, a misload detection inner door 25 is pressed by the infusion tube 40 to operate on a handle lock part 23A provided to a handle 23. Accordingly, a claw portion 23Ac of the handle lock part 23A is pushed up, so that the door unit 20 cannot be locked with the pump body 10 by inserting the claw portion 23Ac into a rectangular through-hole 11c of a base plate 11. Therefore, the misloaded state can be identified.
摘要:
A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.
摘要:
A GMR angle sensor for vehicles includes a GMR element in which the element resistance is changed in response to an external magnetic field, lead conductors connected to either end of the GMR element, and a protective layer that seals the GMR element and the lead conductors, wherein the protective layer has a laminated structure including an oxidation-resistant inorganic film that ensures that the GMR element and the lead conductors are sufficiently insulated and a silicone-based organic film laminated on the inorganic film.
摘要:
In a magnetic head structure that forms a medium facing surface of a head element unit by polishing processing, a height monitor that is exposed in the vicinity of the head element unit during the polishing processing to index the height of the head element unit is provided in a planar rectangular shape.