Abstract:
According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.
Abstract:
According to one embodiment, a pressure sensor includes a base and a sensor unit provided on the base. The sensor unit includes a transducing thin film having a first surface, a first strain sensing element provided on the first surface, and a second strain sensing element provided on the first surface. The first strain sensing element includes a first magnetic layer, a first film having a first oxygen concentration, a second magnetic layer provided between the first magnetic layer and the first film, and a first intermediate layer provided between the first and the second magnetic layer. The second strain sensing element includes a third magnetic layer, a second film having a second oxygen concentration different from the first concentration, a fourth magnetic layer provided between the third magnetic layer and the second film, and a second intermediate layer provided between the third and the fourth magnetic layer.
Abstract:
According to one embodiment, a pressure sensor includes a substrate, a first electrode, a second electrode, a first magnetic layer, a second magnetic, a spacer layer, a third magnetic layer. The substrate includes a first region and a second region. The first electrode is provided on the first region. The second electrode is provided on the first electrode. The first magnetic layer is provided between the first electrode and the second electrode. The second magnetic layer is provided between the first electrode and the first magnetic layer or between the first magnetic layer and the second electrode. The spacer layer is provided between the first magnetic layer and the second magnetic layer in a stacking direction of layers from the first electrode to the second electrode. The third magnetic layer is provided continuously with the second magnetic layer on the second region.
Abstract:
According to one embodiment, a pressure sensor includes: a support section; a film section; and a strain sensing element. The film section is supported by the support section and deformable. The film section includes a first film and a second film. The first film includes a first region located in a central part and a second region located in a peripheral part around the first region. The second film is provided on the first region. The strain sensing element is provided on part of the second region. The strain sensing element includes a first magnetic layer; a second magnetic layer; and an intermediate layer. Magnetization of the first magnetic layer changes in response to deformation of the second region. The intermediate layer is provided between the first magnetic layer and the second magnetic layer.
Abstract:
According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.
Abstract:
A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.
Abstract:
According to one embodiment, a microphone package includes: a pressure sensing element including a film and a device; and a cover. The film generates strain in response to pressure. The device includes: a first electrode; a second electrode; and a first magnetic layer. The first magnetic layer is provided between the first electrode and the second electrode and has a first magnetization. The cover includes: an upper portion; and a side portion. The side portion is magnetic and provided depending on the first magnetization and the second magnetization.
Abstract:
A magneto-resistance effect element, including a fixed magnetization layer of which a magnetization is substantially fixed in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer, a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof, a thin film layer, and a functional layer.