Invention Grant
- Patent Title: Magneto-resistance effect element, and method for manufacturing the same
- Patent Title (中): 磁阻效应元件及其制造方法
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Application No.: US13740983Application Date: 2013-01-14
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Publication No.: US08542466B2Publication Date: 2013-09-24
- Inventor: Yoshihiko Fuji , Hideaki Fukuzawa , Hiromi Yuasa , Kunliang Zhang , Min Li , Michiko Hara , Yoshinari Kurosaki
- Applicant: Kabushiki Kaisha Toshiba , TDK Corporation
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,TDK Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,TDK Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Nixon & Vanderhye P.C.
- Priority: JPP2007-094474 20070330
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A magneto-resistance effect element, including a fixed magnetization layer of which a magnetization is substantially fixed in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer, a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof, a thin film layer, and a functional layer.
Public/Granted literature
- US20130128391A1 MAGNETO-RESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-05-23
Information query
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