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113 条记录 (耗时 0.051 秒)

    Generator Control Unit
    92.
    发明申请
    Generator Control Unit 有权
    发电机控制单元

    公开(公告)号：US20080303459A1

    公开(公告)日：2008-12-11

    申请号：US12133088

    申请日：2008-06-04

    申请人： Kimihisa FURUKAWA ,  Satoru Kaneko ,  Tokihito Suwa ,  Yuuichirou Takamune ,  Satoru Ohno ,  Kenta Katsuhama ,  Katsuyo Tsushima

    发明人： Kimihisa FURUKAWA ,  Satoru Kaneko ,  Tokihito Suwa ,  Yuuichirou Takamune ,  Satoru Ohno ,  Kenta Katsuhama ,  Katsuyo Tsushima

    IPC分类号： H02P9/14

    CPC分类号： B60L11/14 ,  B60K6/46 ,  B60L2210/20 ,  B60W10/08 ,  B60W20/00 ,  H02P9/10 ,  Y02T10/6217 ,  Y02T10/642 ,  Y02T10/70 ,  Y02T10/7077 ,  Y02T10/725

    摘要： An object of the present invention is to provide a generator control unit having improved voltage response in a system which is not provided with a battery in a DC output unit.In order to control the DC voltage of the DC voltage output terminal in a state where an electric load is connected to the DC voltage output terminal of a power generation unit, a PWM signal generation unit 429 generates a field voltage to be applied to a field winding terminal of the power generation unit. A feedback control unit 422 calculates a field voltage command value to be given to the PWM signal generation unit 429. Further, the feedback control unit 422 includes a PT control unit 423 which calculates a voltage deviation between a DC voltage detection value and a DC voltage command value to generate the field voltage command value through a PI operation based on the voltage deviation. The feedback control unit 422 includes compensation units 424 and 425 which generate a field voltage command value after compensating the output of the PT control unit 423 for the voltage deviation based on input/output transfer characteristics of the generator from the field voltage to the DC voltage.

    摘要翻译： 本发明的目的是提供一种在直流输出单元中没有设置电池的系统中具有改进的电压响应的发电机控制单元。 为了在电力负载连接到发电单元的直流电压输出端子的状态下控制直流电压输出端子的直流电压，PWM信号生成单元429产生施加到场的场电压 发电机组的绕组端子。 反馈控制单元422计算要提供给PWM信号生成单元429的场电压指令值。此外，反馈控制单元422包括PT控制单元423，其计算直流电压检测值和直流电压之间的电压偏差 指令值通过基于电压偏差的PI运算来产生励磁电压指令值。 反馈控制单元422包括补偿单元424和425，其补偿了基于发电机的输入/输出传递特性的电压偏差的PT控制单元423的输出，从场电压到直流电压之后产生场电压指令值 。

    Electric four-wheel drive vehicle and control unit for same
    95.
    发明申请
    Electric four-wheel drive vehicle and control unit for same 失效
    电动四轮驱动车辆和控制单元相同

    公开(公告)号：US20060201730A1

    公开(公告)日：2006-09-14

    申请号：US11352259

    申请日：2006-02-13

    申请人： Satoru Kaneko ,  Tatsuyuki Yamamoto ,  Masaru Ito ,  Hisaya Shimizu ,  Kenta Katsuhama

    发明人： Satoru Kaneko ,  Tatsuyuki Yamamoto ,  Masaru Ito ,  Hisaya Shimizu ,  Kenta Katsuhama

    IPC分类号： B60K17/356

    CPC分类号： B60L11/12 ,  B60L15/025 ,  B60L15/20 ,  B60L2210/20 ,  B60L2260/28 ,  Y02T10/643 ,  Y02T10/7005 ,  Y02T10/7022 ,  Y02T10/7077 ,  Y02T10/725 ,  Y02T10/7275 ,  Y10S903/904

    摘要： An electric four-wheel drive vehicle and a control unit for the same, which can be applied to cars of class having larger displacements than the class to which the electric four-wheel drive vehicle equipped with the DC motor is applied, without increasing the cost over that of the known mechanical four-wheel drive vehicle. Front wheels of the vehicle are driven by an engine, and rear wheels are driven by an AC motor. A generator is driven by a rotating force of the engine to output DC power. An inverter converts the DC power outputted from the generator to AC power. A control unit controls the generator such that energy Pm required for driving the AC motor is outputted from the generator.

    摘要翻译： 一种电动四轮驱动车辆及其控制单元，可应用于具有比配备有直流电动机的电动四轮驱动车辆类别大的位移类的轿厢，而不增加成本 超过已知的机械四轮驱动车辆。 车辆的前轮由发动机驱动，后轮由交流电动机驱动。 发动机由发动机的旋转力驱动以输出直流电力。 逆变器将从发电机输出的直流电力转换为交流电力。 控制单元控制发电机，使得从发电机输出用于驱动AC电动机所需的能量Pm。

    Catheter for artificial insemination
    96.
    发明授权
    Catheter for artificial insemination 有权
    人工授精导管

    公开(公告)号：US06929598B2

    公开(公告)日：2005-08-16

    申请号：US10431522

    申请日：2003-05-08

    申请人： Satoru Kaneko ,  Nobuo Takagi

    发明人： Satoru Kaneko ,  Nobuo Takagi

    IPC分类号： A61B17/43 ,  A61D19/02 ,  A61M25/00 ,  A61D7/00

    CPC分类号： A61M25/0023 ,  A61B17/43 ,  A61D19/027 ,  Y10S604/906

    摘要： A catheter for artificial insemination which is a hollow cylindrical catheter having open ends at both ends, the catheter comprising a small diameter portion forming a distal end portion, a large diameter portion forming a proximal end portion and a tapered portion connecting the small diameter portion and the large diameter portion, a total inner volume of the catheter being from 0.2 to 1.0 ml.

    摘要翻译： 一种用于人造授精的导管，其是在两端具有开口端的中空圆柱形导管，所述导管包括形成前端部的小直径部分，形成基端部的大直径部分和连接所述小直径部分的锥形部分和 大直径部分，导管的总内部容积为0.2至1.0ml。

    Charge pump device
    98.
    发明授权
    Charge pump device 失效
    电荷泵装置

    公开(公告)号：US06927442B2

    公开(公告)日：2005-08-09

    申请号：US10329722

    申请日：2002-12-26

    申请人： Satoru Kaneko ,  Toshiyuki Ohkoda ,  Takao Myono

    发明人： Satoru Kaneko ,  Toshiyuki Ohkoda ,  Takao Myono

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H02M3/07 ,  H01L29/72

    CPC分类号： H01L27/0921 ,  H01L27/0623 ,  H02M3/07 ,  H02M3/073

    摘要： A semiconductor device for a charge pump device suitable for providing large current capacity and preventing a latch up from occurring is offered. A first and a second N-type epitaxial silicon layers are stacked on a P-type single crystalline silicon substrate, and P-type well regions are formed in the second epitaxial silicon layer. P+-type buried layers abutting on bottoms of the P-type well regions and N+-type buried layers abutting on bottoms of the P+-type buried layers and electrically isolating the P-type well regions from the single crystalline silicon substrate are formed. An MOS transistor is formed in each of the P-type well regions and a drain layer of the MOS transistor and each of the P-type well regions are electrically connected.

    摘要翻译： 提供了适用于提供大电流容量并防止发生闩锁的用于电荷泵装置的半导体器件。 在P型单晶硅衬底上堆叠第一和第二N型外延硅层，在第二外延硅层中形成P型阱区。 邻接在P型阱区域的底部上的P +型掩埋层和与P +型掩埋层的底部邻接并与P型阱区域与单晶硅衬底电隔离的N +型掩埋层。 在每个P型阱区和MOS晶体管的漏极层中形成MOS晶体管，并且每个P型阱区电连接。

    Charge pump device
    99.
    发明授权
    Charge pump device 有权
    电荷泵装置

    公开(公告)号：US06881997B2

    公开(公告)日：2005-04-19

    申请号：US10329718

    申请日：2002-12-26

    申请人： Satoru Kaneko ,  Toshiyuki Ohkoda ,  Takao Myono

    发明人： Satoru Kaneko ,  Toshiyuki Ohkoda ,  Takao Myono

    IPC分类号： H01L27/02 ,  H01L27/06 ,  H01L27/092 ,  H02M3/07 ,  H01L27/108

    CPC分类号： H02M3/073 ,  H01L27/0222 ,  H01L27/0623 ,  H01L27/0928 ,  H02M2003/075 ,  H02M2003/078

    摘要： In a charge pump device, occurrence of a latch up can be prevented and current capacity can be increased. An N-type epitaxial silicon layer is formed on a P-type single crystalline silicon substrate, P-type well regions are formed in the N-type epitaxial silicon layer separated from each other, and P-type lower isolation layers and P-type upper isolation layers are formed between the P-type well regions. Then a charge transfer MOS transistor is formed in each of the P-type well regions. The P-type single crystalline silicon substrate is biased to a ground potential or a negative potential.

    摘要翻译： 在电荷泵装置中，可以防止闩锁的发生，并且可以增加电流容量。 在P型单晶硅衬底上形成N型外延硅层，在分离的N型外延硅层中形成P型阱区，P型下隔离层和P型 在P型阱区之间形成上隔离层。 然后在每个P型阱区中形成电荷转移MOS晶体管。 P型单晶硅衬底被偏压到接地电位或负电位。

    High breakdown voltage CMOS device
    100.
    发明授权
    High breakdown voltage CMOS device 有权
    高击穿电压CMOS器件

    公开(公告)号：US06864543B2

    公开(公告)日：2005-03-08

    申请号：US10329643

    申请日：2002-12-26

    申请人： Satoru Kaneko ,  Toshiyuki Ohkoda ,  Takao Myono

    发明人： Satoru Kaneko ,  Toshiyuki Ohkoda ,  Takao Myono

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8249 ,  H01L27/02 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H02M3/07 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

    CPC分类号： H02M3/073 ,  H01L27/0222 ,  H01L27/0623 ,  H01L27/0921

    摘要： A semiconductor device for a charge pump device suitable for providing large current capacity and preventing a latch up from occurring is offered. A first and a second N-type epitaxial silicon layers are stacked on a P-type single crystalline silicon substrate, and a P-type well region is formed in the second epitaxial silicon layer. A P+-type buried layer is formed abutting on a bottom of the P-type well region, and an MOS transistor is formed in the P-type well region. The MOS transistor has a first source layer N+S of high impurity concentration, a first drain layer N+D of high impurity concentration and a second source layer N−S and/or a second drain layer N−D of low impurity concentration, which is diffused deeper than the first source layer N+S of high impurity concentration and the first drain layer N+D of high impurity concentration.

    摘要翻译： 提供了适用于提供大电流容量并防止发生闩锁的用于电荷泵装置的半导体器件。 第一和第二N型外延硅层堆叠在P型单晶硅衬底上，并且在第二外延硅层中形成P型阱区。 在P型阱区的底部形成P +型掩埋层，在P型阱区中形成MOS晶体管。 MOS晶体管具有高杂质浓度的第一源极层N + S，高杂质浓度的第一漏极层N + D和低杂质浓度的第二源极层NS和/或第二漏极层ND，其被扩散更深 高杂质浓度的第一源极层N + S和杂质浓度高的第一漏极层N + D。