SEMICONDUCTOR MANUFACTURING DEVICE AND CONTROL OF THE SAME

    公开(公告)号:US20240412407A1

    公开(公告)日:2024-12-12

    申请号:US18437115

    申请日:2024-02-08

    Abstract: A semiconductor manufacturing device includes an electron beam source emitting; a plurality of condenser lenses disposed between a stage on which an object including structures is seated and the electron beam source; an objective lens disposed between the plurality of condenser lenses and the stage; an aperture disposed between the plurality of condenser lenses; and a controller configured to acquire a plurality of original images according to a working distance between the objective lens and the object, acquire a pattern image indicating the structures from the plurality of original images, a plurality of kernel images indicating distribution of an electron beam on the object, and a plurality of position vectors indicating a relative position of the structures in the plurality of kernel images, and adjust a position of the aperture based on a motion vector indicating movement of the plurality of position vectors according to the working distance.

    ION GENERATION DEVICE AND ION IMPLANTER
    3.
    发明公开

    公开(公告)号:US20240266140A1

    公开(公告)日:2024-08-08

    申请号:US18619397

    申请日:2024-03-28

    CPC classification number: H01J37/08 H01J37/09 H01J37/3171 H01J2237/061

    Abstract: An ion generation device includes an arc chamber including an internal space and including a front slit for extracting an ion beam from plasma generated in the internal space, a magnetic field generator that generates a magnetic field applied in an axial direction in the internal space, and a first cathode configured to supply a thermoelectron into the internal space. The first cathode includes a first cathode cap, a first heat source, and a first thermal shield including a first extension portion. A first tip portion, and a first tip opening, and a first opening width of the first tip opening in the radial direction is smaller than a maximum width of the first cathode cap in the radial direction.

    Shield for filament in an ion source

    公开(公告)号:US12046443B2

    公开(公告)日:2024-07-23

    申请号:US17532358

    申请日:2021-11-22

    CPC classification number: H01J37/08 H01J37/09 H01J37/3171

    Abstract: A Bernas ion source having a shield is disclosed. The shield is disposed between the distal portion of the filament and the first end of the chamber and serves to confine the plasma to the region between the shield and the second end of the chamber. The shield may be electrically connected to the negative leg of the filament so as to be the most negatively biased component in the chamber. In other embodiments, the shield may be electrically floating. In this embodiment, the shield may self-bias. The shield is typically made of a refractory metal. The use of the shield may reduce back heating of the filament by the plasma and reduce the possibility for thermal runaway. This may allow denser plasmas to be generated within the chamber.

    Apparatus and Method for Fabrication of Shield Plate

    公开(公告)号:US20240208762A1

    公开(公告)日:2024-06-27

    申请号:US18536792

    申请日:2023-12-12

    Applicant: JEOL Ltd.

    CPC classification number: B65H35/002 B65H59/06 H01J37/09 H01J37/3053

    Abstract: There is provided a shield plate fabrication apparatus capable of fabricating a shield plate easily. The shield plate is included in a sample milling apparatus which mills a sample by shielding a part of the sample with the shield plate and irradiating the sample with a charged particle beam. The fabrication apparatus includes: a base plate holding shaft for rotatably holding a base plate and winding tape around the base plate; and a tension mechanism for applying tension to the tape while it is being wound around the base plate.

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