公开(公告)号：US20210344861A1

公开(公告)日：2021-11-04

申请号：US17375100

申请日：2021-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minji Hwang ,  Hyosang Kim ,  Haesick Sul ,  Seung Hyun Lim

IPC: H04N5/378 ,  H04N5/345 ,  H04N5/347 ,  H04N5/3745 ,  H04N9/04 ,  H04N5/369 ,  H01L27/146

Abstract: Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.

公开(公告)号：US20200053306A1

公开(公告)日：2020-02-13

申请号：US16658522

申请日：2019-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Hyun Cho ,  Ji Yong Park ,  Dae Hwa Paik ,  Kyoung Min Koh ,  Min Ho Kwon ,  Seung Hyun Lim

IPC: H04N5/378 ,  H04N5/374 ,  H03M7/30 ,  H03M1/12 ,  H04N5/369 ,  H03M5/02 ,  H03M1/18 ,  H03M1/08

Abstract: An image sensor chip includes an internal voltage generator for generating internal voltages using an external voltage received at a first terminal of the image sensor chip, a temperature sensor for generating a temperature voltage, a selection circuit for outputting one of the external voltage, the internal voltages, and the temperature voltage, a digital code generation circuit for generating a digital code using an output voltage of the selection circuit, and a second terminal for outputting the digital code from the image sensor chip.

公开(公告)号：US10531032B2

公开(公告)日：2020-01-07

申请号：US15591626

申请日：2017-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Hyun Cho ,  Ji Yong Park ,  Dae Hwa Paik ,  Kyoung Min Koh ,  Min Ho Kwon ,  Seung Hyun Lim

IPC: H04N5/369 ,  H04N5/374 ,  H03M1/18 ,  H03M1/12 ,  H04N5/378 ,  H03M7/30 ,  H03M1/08 ,  H03M5/02 ,  H03M1/56

Abstract: An image sensor chip includes an internal voltage generator for generating internal voltages using an external voltage received at a first terminal of the image sensor chip, a temperature sensor for generating a temperature voltage, a selection circuit for outputting one of the external voltage, the internal voltages, and the temperature voltage, a digital code generation circuit for generating a digital code using an output voltage of the selection circuit, and a second terminal for outputting the digital code from the image sensor chip.

公开(公告)号：US09972636B2

公开(公告)日：2018-05-15

申请号：US15626395

申请日：2017-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Won Kim ,  Seung Hyun Lim ,  Chang Seok Kang ,  Young Woo Park ,  Dae Hoon Bae ,  Dong Seog Eun ,  Woo Sung Lee ,  Jae Duk Lee ,  Jae Woo Lim ,  Hanmei Choi

IPC: H01L27/115 ,  H01L27/11565 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11573 ,  H01L29/04

CPC classification number: H01L27/11565 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L28/00 ,  H01L29/04

Abstract: A memory device includes a plurality of channel regions that each extend in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate adjacent the channel regions, each of the gate electrodes extending different lengths, and a plurality of dummy channel regions adjacent first ends of the plurality of gate electrode layers, wherein the substrate includes a substrate insulating layer formed below the plurality of dummy channel regions.

公开(公告)号：US12027541B2

公开(公告)日：2024-07-02

申请号：US17502499

申请日：2021-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong Kim ,  Dae Hwa Paik ,  Seung Hyun Lim ,  Sin Hwan Lim

IPC: H01L27/146 ,  H04N25/75 ,  H04N25/767 ,  H04N25/778 ,  H04N25/78

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H04N25/75 ,  H04N25/767 ,  H04N25/778 ,  H04N25/78

Abstract: An image sensor includes a first column line and a second column line configured to extend in a first direction, a plurality of pixel groups configured to connect to the first column line or the second column line and to comprise a plurality of pixels in each of the plurality of pixel groups, a bias circuit configured to comprise a first current circuit and a second current circuit configured to output different bias currents in a first operational mode, and a switching circuit configured to connect the first column line to the first current circuit and connect the second column line to the second current circuit during a first time period, and to connect the first column line to the second current circuit and connect the second column line to the first current circuit during a second time period subsequent to the first time period in the first operational mode.

公开(公告)号：US20240170483A1

公开(公告)日：2024-05-23

申请号：US18347919

申请日：2023-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gunho Jo ,  Heesub Kim ,  Seung Hyun Lim ,  Bomi Kim ,  Eunho Cho

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/528

CPC classification number: H01L27/088 ,  H01L21/823475 ,  H01L23/5286

Abstract: An integrated circuit device includes a fin-type active region including a first fin portion and a second fin portion apart from each other in a first lateral direction with a contact space therebetween, a first source/drain region on the fin-type active region at a position overlapping the contact space in a vertical direction, a gate line on the first fin portion, a device isolation film covering both sidewalls of each of the first and second fin portions and defining a width of the contact space, a back side source/drain contact electrically connected to the first source/drain region, filling the contact space, and having a sidewall facing each of the first and second fin portions and the device isolation film, and an etch stop layer contacting a top surface of each of the first and second fin portions between the first fin portion and the gate line.

公开(公告)号：US11516424B2

公开(公告)日：2022-11-29

申请号：US17375100

申请日：2021-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minji Hwang ,  Hyosang Kim ,  Haesick Sul ,  Seung Hyun Lim

IPC: H04N5/378 ,  H04N5/345 ,  H04N5/347 ,  H04N5/3745 ,  H04N9/04 ,  H04N5/369 ,  H01L27/146

Abstract: Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.

公开(公告)号：US10972693B2

公开(公告)日：2021-04-06

申请号：US16727571

申请日：2019-12-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hong Kim ,  Seung Hyun Lim ,  Han Kook Cho ,  Dong Hun Lee ,  Seog Heon Ham

IPC: H04N5/374 ,  H04N5/3745 ,  H04N5/365 ,  H04N5/378

Abstract: An image sensor and an image processing system including the same are provided. The image sensor includes a pixel array including a plurality of pixels each connected to one of first through m-th column lines to output a pixel signal, where “m” is an integer of at least 2; analog-to-digital converters each configured to receive the pixel signal corresponding to one of the first through m-th column lines, to compare the pixel signal with a ramp signal, and to convert the pixel signal to a digital pixel signal; and a blocking circuit connected to an input terminal of at least one of the analog-to-digital converters to block an influence of an operation of others among the analog-to-digital converters.

公开(公告)号：US20200154071A1

公开(公告)日：2020-05-14

申请号：US16740545

申请日：2020-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minji Hwang ,  Hyosang Kim ,  Haesick Sul ,  Seung Hyun Lim

IPC: H04N5/378 ,  H01L27/146 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/347 ,  H04N5/345

Abstract: Disclosed is an image sensor. The image sensor includes an active pixel sensor array including first to fourth pixel units sequentially arranged in a column direction, and each of the first to fourth pixel units is composed of a plurality of pixels. A first pixel group including the first and second pixel units is connected to a first column line, and a second pixel group including the third pixel unit and the fourth pixel unit is connected to a second column line. The image sensor includes a correlated double sampling circuit including first and second correlated double samplers and configured to convert a first sense voltage sensed from a selected pixel of the first pixel group and a second sense voltage sensed from a selected pixel of the second pixel group into a first correlated double sampling signal and a second correlated double sampling signal, respectively.

公开(公告)号：US20240178274A1

公开(公告)日：2024-05-30

申请号：US18366922

申请日：2023-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gunho Jo ,  Heesub Kim ,  Seung Hyun Lim ,  Bomi Kim ,  Eunho Cho

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/0673 ,  H01L27/092 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/775

Abstract: An integrated circuit device includes a first fin-type active region and a second fin-type active region, a device isolation film adjacent to each of the first and second fin-type active regions, a first gate line on the first fin-type active region, a second gate line on the second fin-type active region, and a gate cut insulating pattern separating the first and second gate lines, wherein the device isolation film includes a first local isolation portion and a second local isolation portion, which are separating the first fin-type active region from the second fin-type active region to be apart from each other with the gate cut insulating pattern therebetween.