公开(公告)号：US10002943B2

公开(公告)日：2018-06-19

申请号：US15164246

申请日：2016-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/165

CPC classification number: H01L29/66545 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.

公开(公告)号：US09379106B2

公开(公告)日：2016-06-28

申请号：US14504822

申请日：2014-10-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L29/66545 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film, and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.

Abstract translation: 一种半导体器件包括：衬底，包括沿第一方向排列的第一至第三鳍片，布置在第一鳍片和第二鳍片之间的第一沟槽，以及布置在第二鳍片和第三鳍片之间的第二沟槽。 半导体器件还包括布置在第一沟槽中的第一场绝缘膜，形成在第二沟槽中的第二场绝缘膜，布置在第一场绝缘膜上的第一虚栅极，以及至少部分地布置在第二沟槽上的第二虚栅极 第二场绝缘膜。 第二场绝缘膜的下表面被布置成低于第一场绝缘膜的下表面。

公开(公告)号：US10269928B2

公开(公告)日：2019-04-23

申请号：US15717843

申请日：2017-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/161 ,  H01L29/66 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L21/762 ,  H01L29/78 ,  H01L29/165

Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.

公开(公告)号：US08878309B1

公开(公告)日：2014-11-04

申请号：US14102897

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/78 ,  H01L27/088

CPC classification number: H01L27/0886 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823481

Abstract: A semiconductor device includes a substrate having first, second and third fins longitudinally aligned in a first direction. A first trench extends between the first and second fins, and a second trench extends between the second and third fins. A first portion of field insulating material is disposed in the first trench, and a second portion of field insulating material is disposed in the second trench. An upper surface of the second portion of the field insulating material is recessed in the second trench at a level below uppermost surfaces of the second and third fins. A first dummy gate is disposed on an upper surface of the first portion of the field insulating material, and a second dummy gate at least partially extends into the second trench to the upper surface of the second portion of the field insulating material.

Abstract translation: 半导体器件包括具有沿第一方向纵向排列的第一，第二和第三鳍片的衬底。 第一沟槽在第一和第二鳍之间延伸，第二沟槽在第二和第三鳍之间延伸。 场绝缘材料的第一部分设置在第一沟槽中，场绝缘材料的第二部分设置在第二沟槽中。 场绝缘材料的第二部分的上表面在第二沟槽中凹陷在第二和第三鳍片的最上表面以下的水平面处。 第一伪栅极设置在场绝缘材料的第一部分的上表面上，并且第二伪栅极至少部分地延伸到第二沟槽中至场绝缘材料的第二部分的上表面。