公开(公告)号：US11010532B2

公开(公告)日：2021-05-18

申请号：US16794045

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alexander Schmidt ,  Dong-Gwan Shin ,  Anthony Payet ,  Hyoung Soo Ko ,  Seok Hoon Kim ,  Hyun-Kwan Yu ,  Si Hyung Lee ,  In Kook Jang

IPC: G06F30/367 ,  G06F30/398 ,  H01L27/02

Abstract: A simulation method includes storing a plurality of structure parameters of transistors for a semiconductor chip, imaging generating a first local layout which includes a first structure parameter extracted from a semiconductor device included in the first local layout, the first structure parameter being an actual parameter determined using the imaging equipment, generating second to n-th local layouts by modifying the first structure parameter included in the first local layout, wherein the second to n-th local layouts respectively have second to n-th structure parameters modified from the first structure parameter, calculating first to n-th effective density factors (EDF) respectively for the first to n-th structure parameters, determining a first effective open silicon density for a first chip using the first to n-th effective density factors and a layout of the first chip, and calculating first to m-th epitaxy times for first to m-th effective open silicon densities.

公开(公告)号：US20200020506A1

公开(公告)日：2020-01-16

申请号：US16257895

申请日：2019-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Bo Shim ,  Il-Gyou Shin ,  Seon-Young Lee ,  Alexander Schmidt ,  Shin-Wook Yi

IPC: H01J37/26 ,  G01N23/20058

Abstract: A system of analyzing a crystal defect includes an image processor, an image generator, and a comparator. The image processor processes a measured transmission electron microscope (TEM) image that is provided by capturing an image of a specimen having a crystal structure, to provide structural defect information of the specimen. The image generator provides a plurality of virtual TEM images corresponding to a plurality of three-dimensional structural defects of the crystal structure. The comparator compares the measured TEM image with the plurality of virtual TEM images using the structural defect information to determine a defect type of the measured TEM image.

公开(公告)号：US20240266284A1

公开(公告)日：2024-08-08

申请号：US18404203

申请日：2024-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Somin Cheon ,  Chulhae Park ,  Alexander Schmidt ,  Kyungmi Yeom ,  Changuk Oh ,  Kyungtaek Cho ,  Eunsong Jee

IPC: H01L23/528

CPC classification number: H01L23/528

Abstract: A pattern structure includes a plurality of first patterns and a plurality of second patterns on a substrate. Each of the plurality of first patterns extend in a first direction and are spaced apart from each other in a second direction, i.e., the first direction and the second direction are substantially parallel to an upper surface of the substrate and perpendicular to each other. Each of the plurality of second patterns extend in the first direction and are spaced apart from each other in the second direction. The plurality of first patterns are aligned with each other in the second direction at a first end, and the plurality of second patterns are aligned with each other in the second direction at a second end that is opposite to the first end in the first direction. The plurality of second patterns are aligned with and spaced apart from the plurality of first patterns, respectively, in the first direction to form a plurality of spaces. Each of the plurality of spaces is located between a first pattern of the plurality of first patterns and a second pattern of the plurality of second patterns that is aligned with the first pattern in the first direction. Additionally, each pair of adjacent spaces from the plurality of spaces comprises a first space and a second space that is separated from the first space in the first direction.

公开(公告)号：US10727025B2

公开(公告)日：2020-07-28

申请号：US16257895

申请日：2019-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Bo Shim ,  Il-Gyou Shin ,  Seon-Young Lee ,  Alexander Schmidt ,  Shin-Wook Yi

IPC: H01J37/26 ,  G01N23/20058

Abstract: A system of analyzing a crystal defect includes an image processor, an image generator, and a comparator. The image processor processes a measured transmission electron microscope (TEM) image that is provided by capturing an image of a specimen having a crystal structure, to provide structural defect information of the specimen. The image generator provides a plurality of virtual TEM images corresponding to a plurality of three-dimensional structural defects of the crystal structure. The comparator compares the measured TEM image with the plurality of virtual TEM images using the structural defect information to determine a defect type of the measured TEM image.

公开(公告)号：US10164017B2

公开(公告)日：2018-12-25

申请号：US15887773

申请日：2018-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuichiro Sasaki ,  Bong Soo Kim ,  Tae Gon Kim ,  Yoshiya Moriyama ,  Seung Hyun Song ,  Alexander Schmidt ,  Abraham Yoo ,  Heung Soon Lee ,  Kyung In Choi

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/223 ,  H01L21/265

Abstract: A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed region between the protruding regions. Gate structures overlapping the protruding regions are disposed. An epitaxial layer is disposed in the recessed region to have a height greater than a width. An impurity region is disposed in the fin active region, surrounds side walls and a bottom of the recessed region, has the same conductivity type as a conductivity type of the epitaxial layer, and includes a majority impurity that is different from a majority impurity included in at least a portion of the epitaxial layer.

公开(公告)号：US09911809B2

公开(公告)日：2018-03-06

申请号：US15424081

申请日：2017-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuichiro Sasaki ,  Bong Soo Kim ,  Tae Gon Kim ,  Yoshiya Moriyama ,  Seung Hyun Song ,  Alexander Schmidt ,  Abraham Yoo ,  Heung Soon Lee ,  Kyung In Choi

IPC: H01L29/10 ,  H01L29/78 ,  H01L27/092 ,  H01L29/66 ,  H01L29/08 ,  H01L21/8238

CPC classification number: H01L29/1083 ,  H01L21/2236 ,  H01L21/26586 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823892 ,  H01L27/0921 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed region between the protruding regions. Gate structures overlapping the protruding regions are disposed. An epitaxial layer is disposed in the recessed region to have a height greater than a width. An impurity region is disposed in the fin active region, surrounds side walls and a bottom of the recessed region, has the same conductivity type as a conductivity type of the epitaxial layer, and includes a majority impurity that is different from a majority impurity included in at least a portion of the epitaxial layer.