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公开(公告)号：US11912920B2
公开(公告)日：2024-02-27
申请号：US17092368
申请日：2020-11-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taekhoon Kim , Nayoun Won , Tae Gon Kim , Mi Hye Lim , Shin Ae Jun , Shang Hyeun Park
CPC classification number: C09K11/883 , C09K11/02 , H10K50/115 , B82Y15/00 , B82Y40/00 , C01B25/087
Abstract: A quantum dot-polymer composite including a polymer matrix; and core-shell quantum dots dispersed in the polymer matrix, wherein the core-shell quantum dots include a semiconductor nanocrystal core including indium, zinc, and phosphorus and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur. The core-shell quantum dots do not include cadmium, the core-shell quantum dots are configured to emit green light, the core-shell quantum dots have a mole ratio of phosphorus to indium of greater than or equal to about 0.75, and the core-shell quantum dots have a mole ratio of zinc to indium of greater than or equal to about 35, and a method of producing the core-shell quantum dots, and a display device including a light emitting element that includes the quantum dot-polymer composite.
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公开(公告)号：US11808960B2
公开(公告)日：2023-11-07
申请号：US17546257
申请日：2021-12-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Gon Kim , Shang Hyeun Park , Shin Ae Jun
IPC: G02B5/20 , G02F1/017 , C01G15/00 , C01G9/08 , C09K11/70 , C09K11/88 , B82Y20/00 , B82Y30/00 , B82Y40/00
CPC classification number: G02B5/207 , C01G9/08 , C01G15/006 , C09K11/70 , C09K11/883 , G02F1/01791 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01P2004/64 , C01P2004/80 , C01P2006/60 , G02B2207/101
Abstract: A color filter including a first pixel (or color conversion region) that is configured to emit a first light and a display device including the color filter. The first pixel includes a (first) quantum dot composite (or a color conversion layer including the quantum dot composite), wherein the quantum dot composite may include a matrix and a plurality of quantum dots dispersed (e.g., randomly) in the matrix, wherein the plurality of the quantum dots exhibit a multi-modal distribution (e.g., a bimodal distribution) including a first peak particle size and a second peak particle size in a size analysis, wherein the second peak particle size is greater than the first peak particle size, and a difference between the first peak particle size and the second peak particle size is less than or equal to about 5 nanometers (nm) (e.g., less than or equal to about 4.5 nm).
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公开(公告)号：US11788005B2
公开(公告)日：2023-10-17
申请号：US17824225
申请日：2022-05-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Gon Kim , Shin Ae Jun , Taek hoon Kim , Hyeyeon Yang , Nayoun Won , Jongmin Lee , Mi Hye Lim
CPC classification number: C09K11/70 , C08F220/382 , C09K11/025 , C09K11/88 , C09K11/883 , H01L33/005 , H01L33/502 , B82Y20/00 , H01L2933/0025 , H01L2933/0041
Abstract: Quantum dots and a composite and a display device including the quantum dots. The quantum dots comprise a semiconductor nanocrystal core comprising indium and phosphorous, and optionally zinc, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dots are configured to exhibit a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dots, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4:
(Absfirst−Absvalley)/Absfirst=VD
wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak, and
wherein the maximum photoluminescence peak of the quantum dots has a full width at half maximum of less than or equal to 40 nanometers.-
4.发明授权公开(公告)号：US11613694B2
公开(公告)日：2023-03-28
申请号：US17346793
申请日：2021-06-14
Inventor： Tae Gon Kim , Ha Il Kwon , Shin Ae Jun
IPC: C09K11/02 , G03F7/00 , C08K3/00 , C09D5/22 , C09K11/88 , G02B5/20 , G02F1/1335 , G03F7/004 , G03F7/031 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/40 , H01L33/50 , H01L31/054 , B82Y20/00 , B82Y40/00 , H01L31/055
Abstract: A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.
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公开(公告)号：US11530353B2
公开(公告)日：2022-12-20
申请号：US16914598
申请日：2020-06-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyeyeon Yang , Garam Park , Shin Ae Jun , Tae Gon Kim , Taekhoon Kim
Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.
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Patent Agency Ranking
公开(公告)号：US11345851B2
公开(公告)日：2022-05-31
申请号：US17106317
申请日：2020-11-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taekhoon Kim , Seonmyeong Choi , Jongmin Lee , Tae Gon Kim , Young Seok Park , Shin Ae Jun
IPC: C09K11/88 , G03F7/004 , G03F7/032 , G03F7/029 , H01L27/32 , G02F1/13357 , C09K11/08 , G03F7/40 , B82Y20/00 , B82Y40/00 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38
Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.
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公开(公告)号：US11060019B2
公开(公告)日：2021-07-13
申请号：US16158483
申请日：2018-10-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yongwook Kim , Eun Joo Jang , Tae Gon Kim , Shang Hyeun Park , Hyo Sook Jang , Young-soo Jeong
IPC: C09K11/65 , C09K11/02 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C09K11/88 , C09K11/08 , G02F1/1335 , G02F1/13357 , H01L27/32
Abstract: A composition comprising: a plurality of quantum dots; a plurality of luminous carbon nanoparticles; a carboxylic acid group-containing binder; a polymerizable monomer including a carbon-carbon double bond; and an initiator, wherein the plurality of quantum dots comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, the plurality of luminous carbon nanoparticles have a size of less than or equal to about 10 nanometers, and exhibit both a D band and a G band in a Raman spectrum thereof, and at least a portion of the plurality of luminous carbon nanoparticles absorb light having a wavelength of greater than or equal to about 400 nanometers and a maximum luminous peak wavelength thereof is greater than or equal to about 480 nanometers.
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公开(公告)号：US10851297B2
公开(公告)日：2020-12-01
申请号：US16507461
申请日：2019-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taekhoon Kim , Seonmyeong Choi , Jongmin Lee , Tae Gon Kim , Young Seok Park , Shin Ae Jun
IPC: C09K11/88 , G03F7/004 , G03F7/032 , G03F7/029 , H01L27/32 , G02F1/13357 , C09K11/08 , G03F7/40 , B82Y20/00 , B82Y40/00 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38
Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.
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公开(公告)号：US10717927B2
公开(公告)日：2020-07-21
申请号：US15210171
申请日：2016-07-14
Inventor： Tae Gon Kim , Yehonadav Bekenstein , Eun Joo Jang , Paul Alivisatos
IPC: C09K11/74 , C09K11/72 , H01L33/50 , C09K11/02 , H01L31/0352 , B82Y20/00 , B82Y40/00 , B82Y30/00
Abstract: An indium-containing quantum dot including a compound represented by Chemical Formula 1: In1-xMxA Chemical Formula 1 wherein, in Chemical Formula 1, M is aluminum, gallium, yttrium, or scandium, A is nitrogen, phosphorous, arsenic, antimony, bismuth, or a combination thereof, and X is greater than or equal to 0 and less than 1, wherein the indium-containing quantum dot includes fluorine and oxygen to bonded to a surface of the indium-containing quantum dot, wherein an amount of the fluorine is greater than or equal to about 10 atomic percent based on a total number of indium atoms in the indium-containing quantum dot as determined by Rutherford backscattering analysis, and wherein an amount of the oxygen is about 5 atomic percent to about 50 atomic percent based on the total number of indium atoms included in the quantum dot as determined by Rutherford backscattering analysis.
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公开(公告)号：US11981848B2
公开(公告)日：2024-05-14
申请号：US17238538
申请日：2021-04-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Jun Park , Junghwa Kim , Tae Gon Kim , Taekhoon Kim , Young Mo Sung , Nayoun Won , Dongjin Yun , Mi Hye Lim , Shin Ae Jun , Hyeonsu Heo
IPC: C09K11/56 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H10K50/115
CPC classification number: C09K11/565 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H10K50/115
Abstract: A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.
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