公开(公告)号：US10790200B2

公开(公告)日：2020-09-29

申请号：US16236761

申请日：2018-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Bo Shim ,  Je-Hyun Lee

IPC: H01L21/66 ,  G01B15/00

Abstract: A wafer measurement system for measuring a measurable characteristic of a first measurement target formed on a wafer includes: a memory and a processor. The memory is configured to store an image of the wafer, multiple templates each including at least one line, and a measurement program. The processor is accessible to the memory and is configured to execute multiple modules included in the measurement program. The modules include: a template selection module configured to receive the templates and select a measurement template corresponding to a shape of the first measurement target; a template matching module configured to match the measurement template to the first measurement target; and a measurement module configured to measure the measurable characteristic of the first measurement target based on position information of the measurement template.

公开(公告)号：US20200020506A1

公开(公告)日：2020-01-16

申请号：US16257895

申请日：2019-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Bo Shim ,  Il-Gyou Shin ,  Seon-Young Lee ,  Alexander Schmidt ,  Shin-Wook Yi

IPC: H01J37/26 ,  G01N23/20058

Abstract: A system of analyzing a crystal defect includes an image processor, an image generator, and a comparator. The image processor processes a measured transmission electron microscope (TEM) image that is provided by capturing an image of a specimen having a crystal structure, to provide structural defect information of the specimen. The image generator provides a plurality of virtual TEM images corresponding to a plurality of three-dimensional structural defects of the crystal structure. The comparator compares the measured TEM image with the plurality of virtual TEM images using the structural defect information to determine a defect type of the measured TEM image.

公开(公告)号：US11341305B2

公开(公告)日：2022-05-24

申请号：US16433266

申请日：2019-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang-Hoon Kim ,  Do-Yun Kim ,  Ki-Wook Song ,  Sung-Bo Shim ,  Ji-Hye Lee ,  Dong-Chul Ihm ,  Woo-Young Cheon

IPC: G01N21/95 ,  G06F30/367 ,  H01L21/66 ,  G06F30/398

Abstract: A method of predicting a shape of a semiconductor device includes implementing a modeled semiconductor shape with respect to a designed semiconductor layout, extracting a plurality of samples by independently linearly combining process variables with respect to the modeled semiconductor shape; generating virtual spectrums with respect to ones of the extracted plurality of samples through optical analysis, indexing the virtual spectrums to produce indexed virtual spectrums, generating a shape prediction model by using the indexed virtual spectrums as an input and the modeled semiconductor shape as an output, and indexing a spectrum measured from a manufactured semiconductor device and inputting the spectrum to the shape prediction model to predict a shape of the manufactured semiconductor device.

公开(公告)号：US10727025B2

公开(公告)日：2020-07-28

申请号：US16257895

申请日：2019-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Bo Shim ,  Il-Gyou Shin ,  Seon-Young Lee ,  Alexander Schmidt ,  Shin-Wook Yi

IPC: H01J37/26 ,  G01N23/20058

Abstract: A system of analyzing a crystal defect includes an image processor, an image generator, and a comparator. The image processor processes a measured transmission electron microscope (TEM) image that is provided by capturing an image of a specimen having a crystal structure, to provide structural defect information of the specimen. The image generator provides a plurality of virtual TEM images corresponding to a plurality of three-dimensional structural defects of the crystal structure. The comparator compares the measured TEM image with the plurality of virtual TEM images using the structural defect information to determine a defect type of the measured TEM image.