公开(公告)号：US20230161937A1

公开(公告)日：2023-05-25

申请号：US17951580

申请日：2022-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Somin Cheon ,  Joonsung Kim ,  Jaewan Song ,  Seunghune Yang ,  Sooyong Lee

IPC: G06F30/3323 ,  G03F7/20

CPC classification number: G06F30/3323 ,  G03F7/70433 ,  G03F7/705 ,  G06F2119/18

Abstract: A mask layout design method capable of quickly and effectively designing a crack-resistant mask layout in a full-chip scale, a mask manufacturing method including the mask layout design method, and a mask layout are provided. The mask layout design method includes designing a full-chip layout with respect to a mask; extracting a representative pattern from the full-chip layout; detecting a stress weak point in the representative pattern; verifying the stress weak point by forming a pattern on a wafer; and changing a design rule with respect to the full-chip layout.

公开(公告)号：US20240266284A1

公开(公告)日：2024-08-08

申请号：US18404203

申请日：2024-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Somin Cheon ,  Chulhae Park ,  Alexander Schmidt ,  Kyungmi Yeom ,  Changuk Oh ,  Kyungtaek Cho ,  Eunsong Jee

IPC: H01L23/528

CPC classification number: H01L23/528

Abstract: A pattern structure includes a plurality of first patterns and a plurality of second patterns on a substrate. Each of the plurality of first patterns extend in a first direction and are spaced apart from each other in a second direction, i.e., the first direction and the second direction are substantially parallel to an upper surface of the substrate and perpendicular to each other. Each of the plurality of second patterns extend in the first direction and are spaced apart from each other in the second direction. The plurality of first patterns are aligned with each other in the second direction at a first end, and the plurality of second patterns are aligned with each other in the second direction at a second end that is opposite to the first end in the first direction. The plurality of second patterns are aligned with and spaced apart from the plurality of first patterns, respectively, in the first direction to form a plurality of spaces. Each of the plurality of spaces is located between a first pattern of the plurality of first patterns and a second pattern of the plurality of second patterns that is aligned with the first pattern in the first direction. Additionally, each pair of adjacent spaces from the plurality of spaces comprises a first space and a second space that is separated from the first space in the first direction.