公开(公告)号：US20170152609A1

公开(公告)日：2017-06-01

申请号：US15432572

申请日：2017-02-14

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Shinsuke FUJIWARA ,  Taro NISHIGUCHI ,  Tsutomu HORI ,  Naoki OOI ,  Shunsaku UETA

IPC: C30B23/02 ,  C30B29/36

CPC classification number: C30B23/02 ,  C30B23/00 ,  C30B23/066 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/02645 ,  H01L21/02664

Abstract: A method of manufacturing a silicon carbide substrate has the following steps. A silicon carbide source material is partially sublimated. After partially sublimating the silicon carbide source material, a seed substrate having a main surface is placed in a growth container. By sublimating the remainder of the silicon carbide source material in the growth container, a silicon carbide crystal grows on the main surface of the seed substrate. In this way, an increase of dislocations in the main surface of the seed substrate can be suppressed, thereby providing a method of manufacturing a silicon carbide substrate having few dislocations.

公开(公告)号：US20140061668A1

公开(公告)日：2014-03-06

申请号：US14075634

申请日：2013-11-08

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Shinsuke FUJIWARA ,  Koji UEMATSU ,  Hideki OSADA ,  Seiji NAKAHATA

IPC: H01L29/20 ,  H01L29/36

CPC classification number: H01L29/2003 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/36 ,  H01L33/0075 ,  H01L33/16

Abstract: A GaN single crystal substrate has a main surface with an area of not less than 10 cm2, the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the substrate has at least one of a substantially uniform distribution of a carrier concentration in the main surface, a substantially uniform distribution of a dislocation density in the main surface, and a photoelasticity distortion value of not more than 5×10−5, the photoelasticity distortion value being measured by photoelasticity at an arbitrary point in the main surface when light is applied perpendicularly to the main surface at an ambient temperature of 25° C. Thus, the GaN single crystal substrate suitable for manufacture of a GaN-based semiconductor device having a small variation of characteristics can be obtained.

Abstract translation: GaN单晶衬底具有面积不小于10cm 2的主表面，主表面相对于（0001）面和（0001）面之一具有倾斜不小于65°且不大于85°的面取向 （000-1）面，并且基板具有在主表面中载流子浓度基本均匀分布中的至少一个，主表面中位错密度的基本均匀分布，并且光弹性变形值不大 在5×10-5以下的情况下，在25℃的环境温度下垂直于主表面照射主表面的任意点时，通过光弹性测定光弹性失真值。因此，GaN单晶基板适合 可以获得具有小的特性变化的GaN基半导体器件的制造。

公开(公告)号：US20130255568A1

公开(公告)日：2013-10-03

申请号：US13780127

申请日：2013-02-28

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Hiroki INOUE ,  Makoto SASAKI ,  Shin HARADA ,  Eiryo TAKASUKA ,  Shinsuke FUJIWARA

IPC: C30B23/06 ,  C30B23/02

CPC classification number: C30B23/066 ,  C30B23/025 ,  C30B29/36

Abstract: A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation includes the following steps. A seed substrate made of silicon carbide and silicon carbide raw material are prepared. Silicon carbide single crystal is grown on the growth face of the seed substrate by sublimating the silicon carbide raw material. In the step of growing silicon carbide single crystal, the maximum growing rate of the silicon carbide single crystal growing on the growth face of the seed substrate is greater than the maximum growing rate of the silicon carbide crystal growing on the surface of the silicon carbide raw material. Thus, there can be provided a method for manufacturing silicon carbide single crystal allowing a thick silicon carbide single crystal film to be obtained, when silicon carbide single crystal having a diameter larger than 100 mm is grown.

Abstract translation: 通过升华制造直径大于100mm的碳化硅单晶的方法包括以下步骤。 制备由碳化硅和碳化硅原料制成的种籽基材。 碳化硅单晶通过使碳化硅原料升华而在种底基材的生长面上生长。 在生长碳化硅单晶的步骤中，生长在种子基底的生长面上的碳化硅单晶的最大生长速率大于在碳化硅原料的表面上生长的碳化硅晶体的最大生长速率 材料。 因此，当生产直径大于100mm的碳化硅单晶时，可以提供制造碳化硅单晶的方法，以获得厚的碳化硅单晶膜。

公开(公告)号：US20130161647A1

公开(公告)日：2013-06-27

申请号：US13681564

申请日：2012-11-20

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Shinsuke FUJIWARA ,  Shin HARADA ,  Taro NISHIGUCHI

IPC: H01L29/24 ,  H01L29/02

CPC classification number: H01L29/24 ,  C30B23/00 ,  C30B29/36 ,  H01L29/02 ,  H01L29/1608

Abstract: An ingot, a substrate, and a substrate group are obtained each of which is made of silicon carbide and is capable of suppressing variation of characteristics of semiconductor devices. The ingot is made of single-crystal silicon carbide, and has p type impurity. The ingot has a thickness of 10 mm or greater in a growth direction thereof. Further, the ingot has an average carrier density of 1×1016 cm−3or greater. Further, the ingot has a carrier density fluctuating in the growth direction by ±80% or smaller relative to the average carrier density. In this way, variation of carrier density among substrates obtained from the ingot is suppressed, thereby suppressing variation of characteristics of semiconductor devices manufactured using the substrates.

Abstract translation: 获得了由碳化硅制成并且能够抑制半导体器件的特性变化的晶锭，衬底和衬底组。 该锭由单晶碳化硅制成，具有p型杂质。 锭的生长方向的厚度为10mm以上。 此外，锭的平均载流子密度为1×1016 cm -3以上。 此外，该锭具有相对于平均载流子密度在生长方向上波动的载体密度±80％以下。 以这种方式，抑制了从锭获得的基板之间的载流子密度的变化，从而抑制了使用基板制造的半导体器件的特性的变化。

公开(公告)号：US20160108553A1

公开(公告)日：2016-04-21

申请号：US14978866

申请日：2015-12-22

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Shin HARADA ,  Shinsuke FUJIWARA ,  Taro NISHIGUCHI

IPC: C30B23/02 ,  C30B29/36

CPC classification number: C30B23/025 ,  C30B23/005 ,  C30B29/36 ,  C30B35/007 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02631

Abstract: A silicon carbide substrate capable of stably forming a device of excellent performance, and a method of manufacturing the same are provided. A silicon carbide substrate is made of a single crystal of silicon carbide, and has a width of not less than 100 mm, a micropipe density of not more than 7 cm−2, a threading screw dislocation density of not more than 1×104 cm−2, a threading edge dislocation density of not more than 1×104 cm−2, a basal plane dislocation density of not more than 1×104 cm 2, a stacking fault density of not more than 0.1 cm−1, a conductive impurity concentration of not less than 1×1018 cm 3, a residual impurity concentration of not more than 1×1016 cm−3, and a secondary phase inclusion density of not more than 1 cm−3.

Abstract translation: 提供能够稳定地形成优异性能的器件的碳化硅衬底及其制造方法。 碳化硅衬底由碳化硅单晶制成，宽度不小于100mm，微管密度不超过7cm -2，螺纹位错密度不大于1×104cm -2，螺纹刃位错密度不大于1×104cm-2，基面位错密度不大于1×104cm 2，堆垛层错密度不大于0.1cm-1，导电杂质 浓度不小于1×1018cm 3，残留杂质浓度不大于1×1016cm-3，次相夹杂密度不大于1cm-3。

公开(公告)号：US20160027879A1

公开(公告)日：2016-01-28

申请号：US14873471

申请日：2015-10-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Taro NISHIGUCHI ,  Shin HARADA ,  Shinsuke FUJIWARA

IPC: H01L29/16 ,  H01L29/04 ,  H01L29/32

CPC classification number: H01L29/1608 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  H01L29/045 ,  H01L29/32 ,  H01L29/66068 ,  H01L29/7802

Abstract: A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to direction is at most 1×105 cm−2. Thus, a silicon carbide semiconductor substrate enabling improved yield of semiconductor devices can be provided.

Abstract translation: 半导体衬底具有主表面并由单晶碳化硅形成。 主表面包括中心区域，该区域是与外圆周5mm以内的区域。 当中心区域划分为1mm×1mm的正方形区域时，在任何方形区域中，汉堡矢量平行于<0001>方向的位错密度最多为1×105cm-2。 因此，可以提供能够提高半导体器件的产量的碳化硅半导体衬底。

公开(公告)号：US20130161646A1

公开(公告)日：2013-06-27

申请号：US13664636

申请日：2012-10-31

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Taro NISHIGUCHI ,  Shin HARADA ,  Shinsuke FUJIWARA

IPC: H01L29/161

CPC classification number: H01L29/1608 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36 ,  H01L29/045 ,  H01L29/32 ,  H01L29/66068 ,  H01L29/7802

Abstract: A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than the area within 5 mm from the outer circumference. When the central area is divided into square areas of 1 mm×1 mm, in any square area, density of dislocations of which Burgers vector is parallel to direction is at most 1×105 cm−2. Thus, a silicon carbide semiconductor substrate enabling improved yield of semiconductor devices can be provided.

Abstract translation: 半导体衬底具有主表面并由单晶碳化硅形成。 主表面包括中心区域，该区域是与外圆周5mm以内的区域。 当中心区域划分为1mm×1mm的正方形区域时，在任何方形区域中，汉堡矢量平行于<0001>方向的位错密度最多为1×105cm-2。 因此，可以提供能够提高半导体器件的产量的碳化硅半导体衬底。

公开(公告)号：US20130105858A1

公开(公告)日：2013-05-02

申请号：US13715254

申请日：2012-12-14

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Issei SATOH ,  Michimasa MIYANAGA ,  Shinsuke FUJIWARA ,  Hideaki NAKAHATA

IPC: H01L29/267

CPC classification number: H01L29/267 ,  C23C14/0617 ,  C23C14/28 ,  C30B23/02 ,  C30B29/36 ,  C30B29/38 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631

Abstract: Si(1-v-w-x)CwAlxNv crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si(1-v-w-x)CwAlxNv substrate, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer are provided.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer 12 (0

Abstract translation: 形成混晶的Si（1-v-w-x）C w Al x N v晶体。 提供了一种用于制造易加工的Si（1-v-w-x）C w Al x N v衬底的方法，制造外延晶片的方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片。 制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。 首先，准备Si基板11。 然后在Si衬底11上生长Si（1-vwx）C w Al x N v层12（0

公开(公告)号：US20130292737A1

公开(公告)日：2013-11-07

申请号：US13933514

申请日：2013-07-02

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Shinsuke FUJIWARA ,  Koji UEMATSU ,  Hitoshi KASAI ,  Takuji OKAHISA

IPC: H01L33/32

CPC classification number: H01L33/325 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/02664

Abstract: A GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

Abstract translation: 由具有（0001）面作为晶体生长面的HVPE生长的GaN晶体和{10-11}面和{11-22}面的至少一个面成长的GaN结晶自支撑衬底 作为晶体生长面，除了晶体的侧面以外，构成小面结晶区域，其中（0001）面生长晶体区域的碳浓度为5×1016原子/ cm3以下，硅浓度 5×1017原子/ cm3以上2×1018原子/ cm3以下，氧浓度1×1017原子/ cm3以下。 并且小面晶体区域的碳浓度为3×1016原子/ cm3以下，硅浓度为5×10 17原子/ cm 3以下，氧浓度为5×10 17原子/ cm 3以上且5×10 18原子 / cm3以下。

公开(公告)号：US20130239881A1

公开(公告)日：2013-09-19

申请号：US13753941

申请日：2013-01-30

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Hiroki INOUE ,  Makoto SASAKI ,  Shin HARADA ,  Shinsuke FUJIWARA

IPC: C30B23/02

CPC classification number: C30B23/025 ,  C30B29/36

Abstract: A method for manufacturing a silicon carbide single-crystal having a diameter of more than 100 mm and a maximum height of 20 mm or more using a sublimation method includes the following steps. That is, there are prepared a seed substrate made of silicon carbide and a silicon carbide source material. By sublimating the silicon carbide source material, the silicon carbide single-crystal is grown on a growth surface of the seed substrate. In the step of growing the silicon carbide single-crystal, a first carbon member provided at a position facing a side wall of the seed substrate is etched at a rate of 0.1 mm/hour or less. By suppressing a change in growth condition for the silicon carbide single-crystal in the crucible, there can be provided a method for manufacturing a silicon carbide single-crystal so as to stably grow the silicon carbide single-crystal.

Abstract translation: 使用升华法制造直径大于100mm，最大高度为20mm以上的碳化硅单晶的方法包括以下步骤。 也就是说，准备了由碳化硅和碳化硅源材料制成的种子基底。 通过升华碳化硅源材料，碳化硅单晶生长在种子基底的生长表面上。 在生长碳化硅单晶的步骤中，以0.1mm /小时以下的速度蚀刻设置在面向种子基板的侧壁的位置的第一碳构件。 通过抑制坩埚中的碳化硅单晶的生长条件的变化，可以提供一种制造碳化硅单晶的方法，以便稳定地生长碳化硅单晶。