公开(公告)号：US20130105858A1

公开(公告)日：2013-05-02

申请号：US13715254

申请日：2012-12-14

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Issei SATOH ,  Michimasa MIYANAGA ,  Shinsuke FUJIWARA ,  Hideaki NAKAHATA

IPC: H01L29/267

CPC classification number: H01L29/267 ,  C23C14/0617 ,  C23C14/28 ,  C30B23/02 ,  C30B29/36 ,  C30B29/38 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631

Abstract: Si(1-v-w-x)CwAlxNv crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si(1-v-w-x)CwAlxNv substrate, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer are provided.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer 12 (0

Abstract translation: 形成混晶的Si（1-v-w-x）C w Al x N v晶体。 提供了一种用于制造易加工的Si（1-v-w-x）C w Al x N v衬底的方法，制造外延晶片的方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片。 制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。 首先，准备Si基板11。 然后在Si衬底11上生长Si（1-vwx）C w Al x N v层12（0

公开(公告)号：US20140357067A1

公开(公告)日：2014-12-04

申请号：US14461838

申请日：2014-08-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Satoshi ARAKAWA ,  Michimasa MIYANAGA ,  Takashi SAKURADA ,  Yoshiyuki YAMAMOTO ,  Hideaki NAKAHATA

IPC: H01L21/02

CPC classification number: H01L21/02021 ,  C30B25/00 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02013 ,  H01L21/02389

Abstract: A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.

Abstract translation: 制造氮化物衬底的方法包括以下步骤。 首先，生长氮化物晶体。 然后，从氮化物晶体切割包括前表面的氮化物衬底。 在切割步骤中，切割氮化物衬底，使得在与正面正交的轴与m轴或a轴之间形成的偏角大于零。 当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平坦平面从氮化物晶体切割氮化物衬底，并且不通过 通过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。

公开(公告)号：US20170283915A1

公开(公告)日：2017-10-05

申请号：US15506622

申请日：2015-09-24

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Yukihiro OISHI ,  Nozomu KAWABE ,  Michimasa MIYANAGA ,  Eisuke HIRO

IPC: C22C23/02 ,  C22C1/02 ,  B22D11/00 ,  C22F1/06

CPC classification number: C22C23/02 ,  B21B3/00 ,  B22D11/001 ,  B22D11/06 ,  B22D21/04 ,  C22C1/02 ,  C22C23/00 ,  C22F1/00 ,  C22F1/06

Abstract: A magnesium alloy contains, in mass %, from 1% to 12% inclusive of Al and from 0.1% to 5% inclusive of Mn and has a structure in which particles of compounds containing Al and Mn are dispersed. The average diameter of the particles of the compounds is from 0.3 μm to 1 μm inclusive, and the area ratio of the particles of the compounds is from 3.5% to 25% inclusive.