公开(公告)号：US20130221492A1

公开(公告)日：2013-08-29

申请号：US13838875

申请日：2013-03-15

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Yuki SEKI ,  Issei SATOH ,  Koji UEMATSU ,  Yoshiyuki YAMAMOTO

IPC: H01L29/06

CPC classification number: H01L29/0684 ,  B32B2264/102 ,  B32B2307/704 ,  B32B2457/14 ,  H01L21/76254

Abstract: A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device.

Abstract translation: 本发明的制造半导体晶片的方法包括以下步骤：通过在基底上形成表面RMS粗糙度不大于1.0nm的基面平坦化层来获得复合基底; 通过将半导体晶体层附着到所述复合基底的所述基面平坦化层所在的一侧来获得复合基板; 在复合衬底的半导体晶体层上生长至少一个半导体层; 以及通过湿法蚀刻去除基底表面平坦化层，从而将半导体晶体层与基底分离，从而获得包括半导体晶体层和半导体层的半导体晶片。 因此，提供一种制造半导体晶片的方法，而不管基底的类型如何，以及适用于该制造方法的复合基底和复合基底都能有效地制造半导体晶片，以有效地制造半导体器件。

公开(公告)号：US20130105858A1

公开(公告)日：2013-05-02

申请号：US13715254

申请日：2012-12-14

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Issei SATOH ,  Michimasa MIYANAGA ,  Shinsuke FUJIWARA ,  Hideaki NAKAHATA

IPC: H01L29/267

CPC classification number: H01L29/267 ,  C23C14/0617 ,  C23C14/28 ,  C30B23/02 ,  C30B29/36 ,  C30B29/38 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631

Abstract: Si(1-v-w-x)CwAlxNv crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si(1-v-w-x)CwAlxNv substrate, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer are provided.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer 12 (0

Abstract translation: 形成混晶的Si（1-v-w-x）C w Al x N v晶体。 提供了一种用于制造易加工的Si（1-v-w-x）C w Al x N v衬底的方法，制造外延晶片的方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片。 制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。 首先，准备Si基板11。 然后在Si衬底11上生长Si（1-vwx）C w Al x N v层12（0

公开(公告)号：US20230002931A1

公开(公告)日：2023-01-05

申请号：US17784653

申请日：2020-09-01

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Koji UEMATSU ,  Issei SATOH ,  Fumitake NAKANISHI

IPC: C30B29/42 ,  C30B33/02

Abstract: A gallium arsenide single crystal substrate having a main surface, in which a ratio of the number of As atoms existing as diarsenic trioxide to the number of As atoms existing as diarsenic pentoxide is greater than or equal to 2 when the main surface is measured by X-ray photoelectron spectroscopy, in which an X-ray having energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°. Arithmetic average roughness (Ra) of the main surface is less than or equal to 0.3 nm.

公开(公告)号：US20220411963A1

公开(公告)日：2022-12-29

申请号：US17778835

申请日：2020-08-14

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Yoshiki NISHIBAYASHI ,  Minori TERAMOTO ,  Yutaka KOBAYASHI ,  Hitoshi SUMIYA ,  Issei SATOH ,  Ryo TOYOSHIMA

IPC: C30B29/04 ,  C30B9/10

Abstract: Provided is a synthetic single-crystal diamond containing nitrogen. In an X-ray absorption fine structure thereof, a ratio I405/I412 between an intensity I405 of a peak which appears at an energy of 405±1 eV and has a full width at ¾ maximum of 3 eV or more and an intensity I412 of a peak which appears at an energy of 412±2 eV is less than 1.5

公开(公告)号：US20240387640A1

公开(公告)日：2024-11-21

申请号：US18694182

申请日：2022-08-31

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Issei SATOH ,  Shigeaki UEMURA ,  Shin HARADA

IPC: H01L29/16 ,  G01N23/085 ,  G01N23/2273 ,  H01L21/304

Abstract: In an X-ray photoelectron spectrum under conditions of incident X-ray energy of 250 eV and a photoelectron take-off angle of 45 degree, when a sum of an area of Si 2p1/2 spectrum and an area of Si 2p3/2 spectrum is 1, a sum of an area of a Si2+ spectrum, an area of a Si3+ spectrum, and an area of a Si4+ spectrum is smaller than 1.8.

公开(公告)号：US20150118830A1

公开(公告)日：2015-04-30

申请号：US14589750

申请日：2015-01-05

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Issei SATOH ,  Yuki SEKI ,  Koji UEMATSU ,  Yoshiyuki YAMAMOTO ,  Hideki MATSUBARA ,  Shinsuke FUJIWARA ,  Masashi YOSHIMURA

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  C03C10/0018 ,  C04B35/106 ,  C04B35/16 ,  C04B35/185 ,  C04B35/481 ,  C04B35/486 ,  C04B35/488 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3246 ,  C04B2235/3463 ,  C04B2235/9607 ,  C30B23/025 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02002 ,  H01L21/02422 ,  H01L21/02436 ,  H01L21/02458 ,  H01L21/02658 ,  H01L21/02664

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate (10) including a support substrate (11) dissoluble in hydrofluoric acid and a single crystal film (13) arranged on a side of a main surface (11m) of the support substrate (11), a coefficient of thermal expansion in the main surface (11m) of the support substrate (11) being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film (20) on a main surface (13m) of the single crystal film (13) arranged on the side of the main surface (11m) of the support substrate (11), and removing the support substrate (11) by dissolving the support substrate (11) in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Abstract translation: 本发明的GaN系膜的制造方法包括以下步骤：制备复合基板（10），该复合基板（10）具有可溶于氢氟酸的支撑基板（11）和配置在主表面（11m）侧的单晶膜 ），支撑基板（11）的主表面（11m）中的热膨胀系数大于0.8倍且小于GaN晶体的热膨胀系数的1.2倍的热膨胀系数， 在布置在支撑基板（11）的主表面（11m）侧的单晶膜（13）的主表面（13m）上形成GaN基膜（20），并且将支撑基板（11） ）通过将支撑基板（11）溶解在氢氟酸中。 因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。